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    Kyocera AVX Components 700A331JT150XT

    Silicon RF Capacitors / Thin Film 150V 330pF Tol 5% Las Mkg
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    MHVIC910HR2

    Abstract: MW6S010NR1 CRCW12061001FKEA ATC700A331JT150XT 1265A ATC700a FREESCALE PACKING A113 A114 AN1955
    Text: Freescale Semiconductor Technical Data Document Number: MW6S010N Rev. 5, 6/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier


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    PDF MW6S010N MW6S010NR1 MW6S010GNR1 MHVIC910HR2 CRCW12061001FKEA ATC700A331JT150XT 1265A ATC700a FREESCALE PACKING A113 A114 AN1955

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MW6S010N Rev. 5, 6/2009 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier


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    PDF MW6S010N MW6S010NR1 MW6S010GNR1

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MMRF1015N Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs MMRF1015NR1 MMRF1015GNR1 Designed for Class A or Class AB power amplifier applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and


    Original
    PDF MMRF1015N MMRF1015NR1 MMRF1015GNR1 MMRF1015NR1