MHVIC910HR2
Abstract: MW6S010NR1 CRCW12061001FKEA ATC700A331JT150XT 1265A ATC700a FREESCALE PACKING A113 A114 AN1955
Text: Freescale Semiconductor Technical Data Document Number: MW6S010N Rev. 5, 6/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier
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MW6S010N
MW6S010NR1
MW6S010GNR1
MHVIC910HR2
CRCW12061001FKEA
ATC700A331JT150XT
1265A
ATC700a
FREESCALE PACKING
A113
A114
AN1955
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Untitled
Abstract: No abstract text available
Text: Document Number: MW6S010N Rev. 5, 6/2009 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier
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Original
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PDF
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MW6S010N
MW6S010NR1
MW6S010GNR1
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Untitled
Abstract: No abstract text available
Text: Document Number: MMRF1015N Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs MMRF1015NR1 MMRF1015GNR1 Designed for Class A or Class AB power amplifier applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and
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MMRF1015N
MMRF1015NR1
MMRF1015GNR1
MMRF1015NR1
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