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    ATC 17 25 Search Results

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    ATC 17 25 Price and Stock

    congatec AG conga-TC175/i3-7100U

    Computer-On-Modules - COM COM Express Type 6 Compact module with Intel Core i3-7100U dual core processor with 2.4GHz, 3MB Intel Smart Cache, GT2 graphics and 2133MT/s dual channel DDR4 memory interface (Intel Kaby Lake-U).
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics conga-TC175/i3-7100U 19
    • 1 $645.03
    • 10 $620.83
    • 100 $620.83
    • 1000 $620.83
    • 10000 $620.83
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    congatec AG conga-TC175/i7-7600U

    Computer-On-Modules - COM COM Express Type 6 Compact module with Intel Core i7-7600U dual core processor with 2.8GHz up to 3.9GHz, 4MB Intel Smart Cache, GT2 graphics and 2133MT/s dual channel DDR4 memory interface (Intel Kaby Lake-U).
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics conga-TC175/i7-7600U 2
    • 1 $1165.51
    • 10 $1164.96
    • 100 $1164.96
    • 1000 $1164.96
    • 10000 $1164.96
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    congatec AG conga-TC175/3965U

    Computer-On-Modules - COM COM Express Type 6 Compact module with Intel Celeron 3965U dual core processor with 2.2GHz, 2MB Intel Smart Cache, GT1 graphics and 2133MT/s dual channel DDR4 memory interface (Intel Kaby Lake-U).
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics conga-TC175/3965U
    • 1 $379.03
    • 10 $364.82
    • 100 $364.82
    • 1000 $364.82
    • 10000 $364.82
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    congatec AG conga-TC175/i5-7300U

    Computer-On-Modules - COM COM Express Type 6 Compact module with Intel Core i5-7300U dual core processor with 2.6GHz up to 3.5GHz, 3MB Intel Smart Cache, GT2 graphics and 2133MT/s dual channel DDR4 memory interface (Intel Kaby Lake-U).
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics conga-TC175/i5-7300U
    • 1 $908.83
    • 10 $897.99
    • 100 $897.99
    • 1000 $897.99
    • 10000 $897.99
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    Coiltronics ATC-5

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com ATC-5
    • 1 -
    • 10 -
    • 100 $1.56
    • 1000 $1.38
    • 10000 $1.27
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    Find more ATC 17 25 price and stock on Findchips.com

    ATC 17 25 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    ATc Fuses

    Abstract: 32v 10a fuse Ato fuse ms 3a
    Text: REVISIONS PART NO. ECN # REV DESCRIPTION - A RELEASED MCATQ - Series DRAWN DATE Geetha 02/6/08 CHECKD DATE APPRVD DATE Suresh 02/6/08 G. C 17/6/08 Specifications: Transparent body. Voltage rating : 32V and less. Equivalent ATO and ATC fuses. Option : Gold plated terminal available


    Original     		M10001216 ATc Fuses 32v 10a fuse Ato fuse ms 3a PDF

    AN7293NFBQ

    Abstract: AN7293NSC K1413
    Text: ICs for FM/AM Tuner AN7293NFBQ FM-IF, NC, MPX IC for Car Radio • Overview Unit: mm 24 17 ■ Features 0.8 • A less number of external components is required 8 components reduction compared with our conventional IC • Neighbering-station interference characteristics improvement by band-ATC function


    Original     		AN7293NFBQ AN7293NSC) AN7293NFBQ AN7289NFBQ/NSC. AN7293NSC K1413 PDF

    Untitled

    Abstract: No abstract text available
    Text: AT C 5 0 6 W L C S E R I E S U B L INDUCTORS ATC 506WLC2R0KG250B Ultra-Broadband Inductor Features: • Inductance: 2.0 µH, typ. • Operating Frequency: 2.3 MHz -3 dB roll-off through 40 GHz, typ. • Insertion Loss (shunt mounted): 0.5 dB, typ. • Return Loss (shunt mounted): -17 dB, typ.


    Original     		506WLC2R0KG250B 506WLC PDF

    Untitled

    Abstract: No abstract text available
    Text: A T C 5 0 6 W L S S e r i e s u b L S M T I n d u ct o r s ATC 506WLSN3R30KG350T Ultra-Broadband SMT Inductor Features: •O  perating Frequency: 1.3 MHz -3 dB roll-off through 40+ GHz, typ. • Insertion Loss (shunt mounted): <0.5 dB, typ. • Return Loss (shunt mounted): >17 dB, typ.


    Original     		506WLSN3R30KG350T 506WLS PDF

    Untitled

    Abstract: No abstract text available
    Text: A T C 5 0 6 W L S S e r i e s u b L S M T I n d u ct o r s ATC 506WLSN2R00KG494T Ultra-Broadband SMT Inductor Features: •O  perating Frequency: 1.6 MHz -3 dB roll-off through 40+ GHz, typ. • Insertion Loss (shunt mounted): <0.5 dB, typ. • Return Loss (shunt mounted): >17 dB, typ.


    Original     		506WLSN2R00KG494T 506WLS PDF

    Untitled

    Abstract: No abstract text available
    Text: A T C 5 0 6 W L S S e r i e s u b L S M T I n d u ct o r s ATC 506WLSN10R7KG150T Ultra-Broadband SMT Inductor Features: •O  perating Frequency: 2.3 MHz -3 dB roll-off through 40 GHz, typ. • Insertion Loss (shunt mounted): 0.5 dB, typ. • Return Loss (shunt mounted): 17 dB, typ.


    Original     		506WLSN10R7KG150T 506WLS PDF

    ATC506WLSN1R47

    Abstract: No abstract text available
    Text: A T C 5 0 6 W L S S e r i e s u b L S M T I n d u ct o r s ATC 506WLSN1R47KT694T Ultra-Broadband SMT Inductor Features: •O  perating Frequency: 2.8 MHz -3 dB roll-off through 40+ GHz, typ. • Insertion Loss (shunt mounted): <0.4 dB, typ. • Return Loss (shunt mounted): >17 dB, typ.


    Original     		506WLSN1R47KT694T 506WLS ATC506WLSN1R47 PDF

    G236

    Abstract: No abstract text available
    Text: A T C 5 0 6 W L S S e r i e s u b L S M T I n d u ct o r s ATC 506WLSN6R00KG236T Ultra-Broadband SMT Inductor Features: •O  perating Frequency: 2.3 MHz -3 dB roll-off through 40 GHz, typ. • Insertion Loss (shunt mounted): 0.5 dB, typ. • Return Loss (shunt mounted): 17 dB, typ.


    Original     		506WLSN6R00KG236T 506WLS G236 PDF

    Untitled

    Abstract: No abstract text available
    Text: A T C 5 0 6 W L S S e r i e s u b L S M T I n d u ct o r s ATC 506WLSN2R00KT494T Ultra-Broadband SMT Inductor Features: •O  perating Frequency: 1.6 MHz -3 dB roll-off through 40+ GHz, typ. • Insertion Loss (shunt mounted): <0.5 dB, typ. • Return Loss (shunt mounted): >17 dB, typ.


    Original     		506WLSN2R00KT494T 506WLS PDF

    Untitled

    Abstract: No abstract text available
    Text: A T C 5 0 6 W L S S e r i e s u b L S M T I n d u ct o r s ATC 506WLSN3R30KT350T Ultra-Broadband SMT Inductor Features: •O  perating Frequency: 1.3 MHz -3 dB roll-off through 40+ GHz, typ. • Insertion Loss (shunt mounted): <0.5 dB, typ. • Return Loss (shunt mounted): >17 dB, typ.


    Original     		506WLSN3R30KT350T 506WLS PDF

    Untitled

    Abstract: No abstract text available
    Text: A T C 5 0 6 W L S S e r i e s u b L S M T I n d u ct o r s ATC 506WLSN10R7KT150T Ultra-Broadband SMT Inductor Features: •O  perating Frequency: 400 KHz -3 dB roll-off through 40+ GHz, typ. • Insertion Loss (shunt mounted): <0.4 dB, typ. • Return Loss (shunt mounted): >17 dB, typ.


    Original     		506WLSN10R7KT150T 506WLS PDF

    TB185

    Abstract: No abstract text available
    Text: February 1, 2012 TB185 Frequency=290-320MHz Pout=200W Gain=16dB Vds=28Vdc Idq=1.2A LR301 PH : 805 484-4210 FAX :( 805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com February 1, 2012 TB185 Gain/Efficiency vs Frequency: Vds=28Vdc, Idq=1.2A, Pout=250W


    Original     		TB185 290-320MHz 28Vdc LR301 TB185 28Vdc, 300Mhz 100B130JW500X PDF

    ATS 137 hall effect switch

    Abstract: 137 hall SENSOR hall effect speed sensor 137 SOT23 hall VCD/DVD diagram conditioning circuits for window open/close ATS137 hall digital switch hall effect 175 hall sensor
    Text: !ATC ATS137 ! Single Hall Effect Switch ! „ Features „ General Description - 3.5V to 20V DC operation voltage - Temperature compensation - Wide operating voltage range - Open-Collector pre-driver - 25mA maximum sinking output current. - Reverse Polarity Protection


    Original     		ATS137 ATS137 ATS 137 hall effect switch 137 hall SENSOR hall effect speed sensor 137 SOT23 hall VCD/DVD diagram conditioning circuits for window open/close hall digital switch hall effect 175 hall sensor PDF

    SOT23 hall

    Abstract: sot23 marking JB 3 pin hall effect sensor marking JB sot23 top marking c2 sot23 ATS177 hall effect dC motor single phase
    Text: ATC ATS177 Single Output Hall Effect Latch „ Features „ General Description - 3.5V to 20V DC operation voltage - Temperature compensation - Wide operating voltage range - Open-Collector pre-driver - 25mA maximum sinking output current. - Reverse polarity protection


    Original     		ATS177 ATS177 SOT23 hall sot23 marking JB 3 pin hall effect sensor marking JB sot23 top marking c2 sot23 hall effect dC motor single phase PDF

    MRF6VP2600H

    Abstract: ATC100B101JT500XT DVB-T Schematic 88-108 an power 88-108 mhz MRF6VP2600HR6 ferrite transformer 0.14 ratio push pull transformer calculator ATC200B103KT50XT Tantalum chip Capacitor 226 20k
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 4.1, 6/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz. Device is unmatched and is suitable for use in broadcast applications.


    Original     		MRF6VP2600H MRF6VP2600HR6 100fficers, MRF6VP2600H ATC100B101JT500XT DVB-T Schematic 88-108 an power 88-108 mhz MRF6VP2600HR6 ferrite transformer 0.14 ratio push pull transformer calculator ATC200B103KT50XT Tantalum chip Capacitor 226 20k PDF

    ATC-10

    Abstract: ATC-15 E56412 BLADE-TYPE TYPE 3 ATC
    Text: Bussmann Automotive Blade-Type Fuses ATC 32 Volts DC, 1 to 40 Amps Dimensional Data 11.7 AMPERE RATING 7.5 10 15 20 25 30 40 3 4 5 Time-Current Characteristic Curves–Average Melt 100 5.12±.13 19.14±.17 12.54 MAX. 18.73±.32 4.01±.12 TIME IN SECONDS


    Original     		E56412 ATC-20 ATC-25 ATC-10 ATC-30 SB01368 ATC-10 ATC-15 E56412 BLADE-TYPE TYPE 3 ATC PDF

    Untitled

    Abstract: No abstract text available
    Text: PTFB192557SH Thermally-Enhanced High Power RF LDMOS FET 255 W, 28 V, 1930 – 1990 MHz Description The PTFB192557SH is a 250-watt LDMOS FET designed specifically for use in Doherty cellular power amplifier applications in the 1930 to 1990 MHz frequency band. Input and output matching has been


    Original     		PTFB192557SH PTFB192557SH 250-watt PDF

    Untitled

    Abstract: No abstract text available
    Text: PTFB182557SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 250 W, 28 V, 1805 – 1880 MHz Description The PTFB182557SH is a 250-watt LDMOS FET specifically designed for use in Doherty cellular power amplifier applications in the 1805


    Original     		PTFB182557SH PTFB182557SH 250-watt PDF

    MRF6VP2600H

    Abstract: T1Z20 transformer calculator j185 an power 88-108 mhz MOSFET IRL A114 A115 5093NW20R00J ATC100B470JT500XT
    Text: Freescale Semiconductor ‘Technical Data Document Number: MRF6VP2600H Rev. 1, 7/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz.


    Original     		MRF6VP2600H MRF6VP2600HR6 MRF6VP2600H T1Z20 transformer calculator j185 an power 88-108 mhz MOSFET IRL A114 A115 5093NW20R00J ATC100B470JT500XT PDF

    TL107 linear

    Abstract: TRANSISTOR tl131
    Text: PTFB182557SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 250 W, 28 V, 1805 – 1880 MHz Description The PTFB182557SH is a 250-watt LDMOS FET speciically designed for use in Doherty cellular power ampliier applications in the 1805


    Original     		PTFB182557SH PTFB182557SH 250-watt H-34288G-4/2 TL107 linear TRANSISTOR tl131 PDF

    TB219

    Abstract: lq801
    Text: August 17, 2012 TB219#3 Frequency=30-512MHz Pout=20W Gain=12dB Vds=28Vdc Idq=200mA Efficiency=35-40% LQ801 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com August 17, 2012 25.0 50 22.5 45 20.0 40 17.5 35 15.0 30 12.5


    Original     		TB219 30-512MHz 28Vdc 200mA LQ801 28Vdc, 200mA, LQ801 PDF

    ATC100B151J

    Abstract: ATC100B101JT500XT G2225X7R225KT3AB ATC100B151JT500XT
    Text: Freescale Semiconductor ‘Technical Data Document Number: MRF6VP2600H Rev. 0, 3/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz.


    Original     		MRF6VP2600H MRF6VP2600HR6 MRF6VP2600H ATC100B151J ATC100B101JT500XT G2225X7R225KT3AB ATC100B151JT500XT PDF

    mrf6vp2600h

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 2.1, 11/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz.


    Original     		MRF6VP2600H MRF6VP2600HR6 MRF6VP2600H PDF

    74S12

    Abstract: No abstract text available
    Text: Integrated Device Technology, Inc. BiCMOS STATIC RAM 64K 8K x 8-BIT CACHE-TAG RAM PRELIMINARY INFORMATION IDT71B74 FEATURES: DESCRIPTION: • High-speed address to M A T C H comparison time — Military: 15/18/25ns (max.) — Commercial: 1 2 /1 5 /I8 n s (max.)


    OCR Scan     		IDT71B74 15/18/25ns /12/15ns 74S12 PDF