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    AT49 FLASH MEMORY Search Results

    AT49 FLASH MEMORY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TN28F020-90 Rochester Electronics LLC 28F020 - 2048K (256K x 8) CMOS Flash Memory Visit Rochester Electronics LLC Buy
    MD28F020-90 Rochester Electronics LLC 28F020 - 2048K (256K x 8) CMOS Flash Memory Visit Rochester Electronics LLC Buy
    TN28F010-90 Rochester Electronics LLC 28F010 - 1-Mbit (128k x 8) NOR Flash Memory Visit Rochester Electronics LLC Buy
    MD28F020-90/B Rochester Electronics LLC 28F020 - 2048K (256K x 8) CMOS Flash Memory Visit Rochester Electronics LLC Buy
    MD28F020-12/B Rochester Electronics LLC 28F020 - 2048K (256K x 8) CMOS Flash Memory Visit Rochester Electronics LLC Buy

    AT49 FLASH MEMORY Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    AT49

    Abstract: AT49 FLASH MEMORY atmel at49 atmel 8A AT49X002
    Text: Recommended Reprogramming Procedure for Atmel’s Flash Memories The AT49X001 N (T), AT49X002(N)(T), AT4 9X 204 8A( T) , AT49 X4 096 A( T) , AT49X8192A(T) (the X designation could refer to BV, LV, or F) are sectored Flash memory devices. The memory array of each device is divided into multiple sectors, which can be used to store


    Original     		AT49X001 AT49X002 AT49X8192A AT49X2048A AT49X4096A 05/00/xM AT49 AT49 FLASH MEMORY atmel at49 atmel 8A PDF

    LV0101

    Abstract: AT49 AT49BV010 AT49HBV010 AT49HLV010 AT49LV010 LV010
    Text: Features • • • • • • • • • • Single Supply Voltage, Range 2.7V to 3.6V Single Supply for Read and Write Fast Read Access Time – 55 ns Internal Program Control and Timer 8K Bytes Boot Block With Lockout Fast Erase Cycle Time – 10 seconds


    Original     		BV010 LV010 0677E 11/99/xM LV0101 AT49 AT49BV010 AT49HBV010 AT49HLV010 AT49LV010 PDF

    DOWNLOAD AT49 FLASH MEMORY PDF FILE

    Abstract: AT49 AT49BV010 AT49HBV010 AT49HLV010 AT49LV010 LV010 ATMEL AT49
    Text: Features • • • • • • • • • • Single Supply Voltage, Range 2.7V to 3.6V Single Supply for Read and Write Fast Read Access Time – 55 ns Internal Program Control and Timer 8K Bytes Boot Block With Lockout Fast Erase Cycle Time – 10 seconds


    Original     		BV010 LV010 0677E 11/99/xM DOWNLOAD AT49 FLASH MEMORY PDF FILE AT49 AT49BV010 AT49HBV010 AT49HLV010 AT49LV010 ATMEL AT49 PDF

    AT49

    Abstract: AT49BV010 AT49HBV010 AT49HLV010 AT49LV010 LV010 ATMEL AT49 AT49BV/LV010
    Text: Features • • • • • • • • • • Single Supply Voltage, Range 2.7V to 3.6V Single Supply for Read and Write Fast Read Access Time – 55 ns Internal Program Control and Timer 8K Bytes Boot Block With Lockout Fast Erase Cycle Time – 10 seconds


    Original     		BV010 LV010 0677D 07/99/xM AT49 AT49BV010 AT49HBV010 AT49HLV010 AT49LV010 ATMEL AT49 AT49BV/LV010 PDF

    AT49 FLASH MEMORY

    Abstract: AT49 FLASH MEMORY FILE AT49 AT49BV010-12TI AT49BV010 AT49HBV010 AT49HLV010 AT49LV010 LV010 2532j
    Text: AT49 H BV/(H)LV01 Features • • • • • • • • • • Single Supply Voltage, Range 2.7V to 3.6V Single Supply for Read and Write Fast Read Access Time - 55 ns Internal Program Control and Timer 8K bytes Boot Block With Lockout Fast Erase Cycle Time - 10 seconds


    Original     		BV010 LV010 AT49HLV010-70JC AT49HLV010-70TC AT49HLV010-70JI AT49HLV010-70TI AT49HLV010-90JC AT49HLV010-90TC AT49HLV010-90JI AT49HLV010-90TI AT49 FLASH MEMORY AT49 FLASH MEMORY FILE AT49 AT49BV010-12TI AT49BV010 AT49HBV010 AT49HLV010 AT49LV010 2532j PDF

    atmel at49

    Abstract: AT49 FLASH MEMORY AT49 AT49BV010 AT49HBV010 AT49HLV010 AT49LV010 LV010
    Text: Features • • • • • • • • • • Single Supply Voltage Range, 2.7V to 3.6V Single Supply for Read and Write Fast Read Access Time - 55 ns Internal Program Control and Timer 8K Bytes Boot Block With Lockout Fast Erase Cycle Time - 10 seconds


    Original     		BV010 LV010 0677C 10/98//xM atmel at49 AT49 FLASH MEMORY AT49 AT49BV010 AT49HBV010 AT49HLV010 AT49LV010 PDF

    Untitled

    Abstract: No abstract text available
    Text: Features Single Supply Voltage, Range 2.7V to 3.6V Single Supply for Read and Write Fast Read Access Time - 55 ns Internal Program Control and Timer 8K Bytes Boot Block With Lockout Fast Erase Cycle Time - 10 seconds Byte-by-byte Programming - 30 ns/Byte typical


    OCR Scan     		BV010 LV010 0677D 07/99/xM PDF

    Untitled

    Abstract: No abstract text available
    Text: Features Single Voltage Operation - 5V Read - 5V Reprogramming Fast Read Access Tim e - 45 ns Internal Program Control and Tim er 8K word Boot Block With Lockout Fast Erase Cycle Tim e - 1 0 seconds Word By Word Programming - 1 0 us/Word Typical Hardware Data Protection


    OCR Scan     		AT49F1024 AT49F1025 1025-70VC AT49F1025-55VI AT49F1025-55JC AT49F1025-55VC F1025-50J AT49F1025-50VC AT49F1025-45JC F1025-45V PDF

    Untitled

    Abstract: No abstract text available
    Text: Features Single Supply Voltage, Range 2.7V to 3.6V Single Supply for Read and Write Fast Read Access Time - 55 ns Internal Program Control and Timer 8K bytes Boot Block With Lockout Fast Erase Cycle Time -1 0 seconds Byte By Byte Programming - 30 |is/Byte typical


    OCR Scan     		BV010 LV010 o010-55TI AT49H 010-70JC LV010-70TC LV010-70JI LV010-70TI 010-90JC PDF

    Untitled

    Abstract: No abstract text available
    Text: Features Single Voltage Operation - 5V Read - 5V Reprogramming Fast Read Access Tim e - 45 ns Internal Program Control and Tim er 8K Word Boot Block With Lockout Fast Erase Cycle Tim e - 1 0 seconds Word-By-Word Programming -1 0 us/Word Typical Hardware Data Protection


    OCR Scan     		AT49F1024 AT49F1025 1025-90VC AT49F1025-90JI 1025-90VI AT49F1025-55VI AT49F1025-55VC AT49F1025-55JC 0000H PDF

    Untitled

    Abstract: No abstract text available
    Text: Features * * * * * * * * * * Single Supply Voltage, Range 2.7V to 3.6V Single Supply for Read and Write Fast Read Access Time - 55 ns Internal Program Control and Timer 8K bytes Boot Block With Lockout Fast Erase Cycle Time -1 0 seconds Byte By Byte Programming - 30 |_is/Byte typical


    OCR Scan     		AT49HLV010-70JC AT49HLV010-70TC AT49HLV010-70JI AT49HLV010-70TI AT49HLV010-90JC AT49HLV010-90TC AT49HLV010-90JI AT49HLV010-90TI AT49LV010-12JC AT49LV010-12TC PDF

    78XXX

    Abstract: AT49B AT12T T49B
    Text: Features * * * * * * * * * * 2.7V to 3.6V Read/Write Operation Fast Read Access Time -120 ns Internal Erase/Program Control Sector Architecture - One 8K Words 16K bytes Boot Block with Programming Lockout - Two 4K Words (8K bytes) Parameter Blocks - One 496K Words (992K bytes) Main Memory Array Block


    OCR Scan     		AT49BV008A AT49BV8192A of48T, 48-Lead, MO-142 48-Ball, /8192A 78XXX AT49B AT12T T49B PDF

    32-LEA

    Abstract: No abstract text available
    Text: Features * * * * * * * * * * Single Supply Voltage Range, 2.7V to 3.6V Single Supply for Read and Write Fast Read Access Time - 55 ns Internal Program Control and Timer 8K Bytes Boot Block With Lockout Fast Erase Cycle Time -1 0 seconds Byte-By-Byte Programming - 30 ps/Byte typical


    OCR Scan     		0677C /98//X 32-LEA PDF

    AT27C1024

    Abstract: AT29C1024 AT49F1024 AT49F1025 AT49F1024-45VC AT49F1024-55VI AT49F1024-70
    Text: Features • Single Voltage Operation - 5V Read - 5V Reprogramming Fast Read Access Time - 45 ns Internal Program Control and Tim er 8K Word Boot Block With Lockout Fast Erase Cycle Tim e - 1 0 seconds Word-By-Word Programming -1 0 ^s/Word Typical Hardware Data Protection


    OCR Scan     		10x14 AT49F1024 AT49F1025 40-Lead, AT27C1024 AT29C1024 AT49F1024-45VC AT49F1024-55VI AT49F1024-70 PDF

    49f080

    Abstract: No abstract text available
    Text: Features * Single Voltage Operation - 5V Read - 5V Reprogramming • Fast Read Access Time - 90 ns • Internal Program Control and Timer * 16K bytes Boot Block With Lockout • Fast Erase Cycle Time -1 0 seconds • Byte-By-Byte Programming -1 0 |as/Byte Typical


    OCR Scan     		AT49F080 AT49F080T-90CI AT49F080T-90RI AT49F080T-90TI AT49F080T-12CC AT49F080T-12RC AT49F080T-12TC AT49F080T-12CI AT49F080T-12RI AT49F080T-12TI 49f080 PDF

    Untitled

    Abstract: No abstract text available
    Text: Features • 2.7V to 3.3V Read/Write • Access Time - 90 ns • Sector Erase Architecture - Thirty 32K Word 64K Byte Sectors with Individual Write Lockout - Eight 4K Word (8K Byte) Sectors with Individual Write Lockout - Two 16K Word (32K Byte) Sectors with Individual Write Lockout


    OCR Scan     		48-ball, AT49BV1604 PDF

    Untitled

    Abstract: No abstract text available
    Text: Features Single Voltage Operation - 5V Read - 5V Reprogramming Fast Read Access Time - 90 ns Internal Program Control and Timer 16K bytes Boot Block With Lockout Fast Erase Cycle Time -1 0 seconds Byte-By-Byte Programming -1 0 |is/Byte Typical Hardware Data Protection


    OCR Scan     		AT49F080 commercia-15TC AT49F080T-15CC AT49F080T-15RC AT49F080T-12TI AT49F080T-12CI AT49F080T-12RI AT49F080T-12TC AT49F080T-12RC AT49F080T-90TI PDF

    F008A-90CI

    Abstract: AT49F008AT-12TC F008 at49 AT49F008A AT49F8192A a12t AT49F8192A-70TI F008A
    Text: Features • Single Voltage Operation - 5V Read - 5V Programming • Fast Read Access Time - 70 ns • Internal Erase/Program Control • Sector Architecture - One 8K Words 16K bytes Boot Block with Programming Lockout - Two 4K Words (8K bytes) Parameter Blocks


    OCR Scan     		AT49F008A AT49F8192A 1199Dâ 08/99/xM F008A-90CI AT49F008AT-12TC F008 at49 a12t AT49F8192A-70TI F008A PDF

    AT49LV040-12JC

    Abstract: AT-49 AT49BV040 AT49BV040T AT49LV040 AT49LV040T at49 at49lv04012ti TSOP8 AT49 FLASH MEMORY FILE
    Text: Features Single Voltage for Read and W rite: 2.7V to 3.6V BV , 3.0V to 3.6V (LV) Fast Read Access Tim e -1 2 0 ns Internal Program Control and Tim er 16K Bytes Boot Block With Lockout Fast Chip Erase Cycle Tim e -1 0 seconds Byte-by-Byte Programming - 30 ns/Byte Typical


    OCR Scan     		AT49BV/LV040 32-Lead, MO-142 AT49LV040-12JC AT-49 AT49BV040 AT49BV040T AT49LV040 AT49LV040T at49 at49lv04012ti TSOP8 AT49 FLASH MEMORY FILE PDF

    Untitled

    Abstract: No abstract text available
    Text: Features • 2.7V to 3.3V Read/Write • Access Time - 90 ns • Sector Erase Architecture - Thirty 32K Word 64K Byte Sectors with Individual Write Lockout - Eight 4K Word (8K Byte) Sectors with Individual Write Lockout - Two 16K Word (32K Byte) Sectors with Individual Write Lockout


    OCR Scan     		0925Hâ 08/99/xM PDF

    AT49BV1614-11 TC

    Abstract: No abstract text available
    Text: Features • 2.7V to 3.6V Read/Write • Access Time - 90 ns • Sector Erase Architecture - Thirty 32K word 64K byte Sectors with Individual Write Lockout - Eight 4K word (8K byte) Sectors with Individual Write Lockout - Two 16K word (32K byte) Sectors with Individual Write Lockout


    OCR Scan     		48-Ball, AT49BV1614-11 TC PDF

    Untitled

    Abstract: No abstract text available
    Text: Features • 2.7V to 3.3V Read/Write • Access Time - 90 ns • Sector Erase Architecture - Thirty 32K Word 64K Byte Sectors with Individual Write Lockout - Eight 4K Word (8K Byte) Sectors with Individual Write Lockout - Two 16K Word (32K Byte) Sectors with Individual Write Lockout


    OCR Scan     		32KWord Reading/P18 48-ball, AT49BV1604 PDF

    Untitled

    Abstract: No abstract text available
    Text: Features • 4.5V to 5.5V Read/Write • Access Time - 70 ns • Sector Erase Architecture - Thirty 32K Word 64K byte Sectors with Individual Write Lockout - Eight 4K Word (8K byte) Sectors with Individual Write Lockout - Two 16K Word (32K byte) Sectors with Individual Write Lockout


    OCR Scan     		0977H-- 08/99/xM PDF

    atmel 8086

    Abstract: 49f020 Am29 Flash Family m29F DATASHEET sst 90 AT49 SST39SF010A SST39SF020A AM29F002 SST39VF010
    Text: Designing In SST’s Multi-Purpose Flash 39 Series Byte-wide Products Application Note October 2005 Designing In SST’s Multi-Purpose Flash (39 Series) Byte-wide Products INTRODUCTION This application note introduces the SST 39 series - SST’s mainstream Multi-Purpose Flash (MPF) product line. It


    Original     		SST39VF080 AT49LV008A-based S72014-04-000 atmel 8086 49f020 Am29 Flash Family m29F DATASHEET sst 90 AT49 SST39SF010A SST39SF020A AM29F002 SST39VF010 PDF