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    AT49B Search Results

    AT49B Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    AT49BV640D-70CI Rochester Electronics LLC AT49BV640D - 64-Mbit (4M x 16), Sectored Flash Visit Rochester Electronics LLC Buy
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    AT49B Price and Stock

    Microchip Technology Inc AT49BV321-90CI

    IC FLASH 32MBIT PARALLEL 48TSOP
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    DigiKey AT49BV321-90CI Tray 210
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    Microchip Technology Inc AT49BV001A-55TI

    IC FLASH 1MBIT PARALLEL 32TSOP
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    Microchip Technology Inc AT49BV320C-70CI

    IC FLASH 32MBIT PARALLEL 47CBGA
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    DigiKey AT49BV320C-70CI Tray 552
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    Microchip Technology Inc AT49BV160D-70TU

    IC FLASH 16MBIT PARALLEL 48TSOP
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    Microchip Technology Inc AT49BV002N-90VI

    IC FLASH 2MBIT PARALLEL 32VSOP
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    DigiKey AT49BV002N-90VI Tray 208
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    AT49B Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AT49B Unknown 16-megabit Original PDF
    AT49BN1604-10 Atmel 16-megabit (1M x 16) Burst Mode 3-volt Only Flash Memory Original PDF
    AT49BN1604T-10 Atmel 16-megabit (1M x 16) Burst Mode 3-volt Only Flash Memory Original PDF
    AT49BN3204 Atmel 64-megabit (4M x 16) and 32-megabit (2M x 16) Burst-Page Mode 2.7-volt Flash Memory Original PDF
    AT49BN3204T Atmel 64-megabit (4M x 16) and 32-megabit (2M x 16) Burst-Page Mode 2.7-volt Flash Memory Original PDF
    AT49BN3208 Atmel 32-megabit (2M x 16) Burst/Page Mode 2.7-volt Flash Memory Original PDF
    AT49BN6408 Atmel 64-megabit (4M x 16) and 32-megabit (2M x 16) Burst-Page Mode 2.7-volt Flash Memory Original PDF
    AT49BN6408T Atmel 64-megabit (4M x 16) and 32-megabit (2M x 16) Burst-Page Mode 2.7-volt Flash Memory Original PDF
    AT49BN6416 Atmel 64-megabit (4M x 16) and 32-megabit (2M x 16) Burst-Page Mode 2.7-volt Flash Memory Original PDF
    AT49BN6416 Atmel 64-megabit (4M x 16) Burst/Page Mode 2.7-volt Flash Memory Original PDF
    AT49BN6416-70CI Atmel 64-megabit(4M x 16) Burst/Page Mode 2.7-volt Flash Memory Original PDF
    AT49BN6416-85CI Atmel 64-megabit(4M x 16) Burst/Page Mode 2.7-volt Flash Memory Original PDF
    AT49BN6416T Atmel 64-megabit (4M x 16) and 32-megabit (2M x 16) Burst-Page Mode 2.7-volt Flash Memory Original PDF
    AT49BN6416T Atmel 64-megabit (4M x 16) Burst/Page Mode 2.7-volt Flash Memory Original PDF
    AT49BN6416T-70CI Atmel 64-megabit(4M x 16) Burst/Page Mode 2.7-volt Flash Memory Original PDF
    AT49BN6416T-85CI Atmel 64-megabit(4M x 16) Burst/Page Mode 2.7-volt Flash Memory Original PDF
    AT49BP1604T-10 Atmel 16-megabit (1M x 16) Burst Mode 3-volt Only Flash Memory Original PDF
    AT49BV001 Atmel 1 Megabit (128K x 8) Single 2.7-volt Battery-VoltageT Flash Memory Original PDF
    AT49BV001 Atmel 1-Megabit Single 2.7-Volt Battery-Voltage Flash Memory Original PDF
    AT49BV001 Unknown 1-megabit Original PDF
    ...

    AT49B Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    AT49BV8004

    Abstract: AT49BV8011 AT49BV8011T 8011T
    Text: Features • 2.7V to 3.6V Read/Write • Access Time - 90 ns • Sector Erase Architecture • • • • • • • • • • • – AT49BV8004 T Fourteen 32K Word (64K Byte) Sectors with Individual Write Lockout Two 16K Word (32K Byte) Sectors with Individual Write Lockout


    Original
    AT49BV8004 AT49BV8011 02/99/xM AT49BV8011T 8011T PDF

    0925K

    Abstract: AT49BV1604
    Text: Errata Sheet V1.0 This Errata Sheet refers to: • The following datasheets: AT91F40816, Rev. 1384B–07/01 AT91X40 Series Datasheet, Rev. 1354C–06/01 AT91M40800 Electrical Characteristics, Rev. 1393B–10/01 AT49BV1604/1614 Flash Datasheet, Rev 0925K–09/00


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    AT91F40816, 1384B AT91X40 1354C AT91M40800 1393B AT49BV1604/1614 0925K 120-ball 56510C AT49BV1604 PDF

    specification of 8004 microprocessor

    Abstract: AT49BV8004T
    Text: Features • 2.7V to 3.6V Read/Write • Access Time - 90 ns • Sector Erase Architecture • • • • • • • • • • • – AT49BV8011 T Fourteen 32K Word (64K Byte) Sectors with Individual Write Lockout Two 16K Word (32K Byte) Sectors with Individual Write Lockout


    Original
    AT49BV8011 AT49BV8004 1265B 07/99/xM specification of 8004 microprocessor AT49BV8004T PDF

    at91r4087

    Abstract: AT91FR4081-33CI AT91FR4081 AT91X40 lv8011
    Text: Errata Sheet V1.0 This Errata Sheet refers to: • The following datasheets: AT91FR4081 Summary, Rev. 1386B–07/01 AT91X40 Series, Rev. 1354C–06/01 AT91R4087 Electrical Characteristics Rev. 1367C–10/01 AT49BV/LV8011 Flash Memory, Rev 1265E–01/01 •


    Original
    AT91FR4081 1386B AT91X40 1354C AT91R4087 1367C AT49BV/LV8011 1265E 120-ball AT91FR4081-33CI AT91FR4081-33CI lv8011 PDF

    EN29LV640T

    Abstract: AT49BV642DT
    Text: Eon Silicon Solution Inc. Page 1/5 EN29LV640T/B V.S. AT49BV642DT Specification Comparison Part No. : EN29LV640T/B Issued date : 2008 / 09 / 24 Prepared by : FAE EngineerΚBrian Hsieh Approval by : FAE ManagerΚJason Tseng This Application Note may be revised by subsequent versions


    Original
    EN29LV640T/B AT49BV642DT EN29LV640T/B AT49BV642DT: EN29LV640T/B: EN29LV640T AT49BV642DT PDF

    AT49BV802A

    Abstract: AT49BV802AT AT49BV802AT-70CI at49bv802a-70tu
    Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Fifteen 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout


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    3405E AT49BV802A AT49BV802AT AT49BV802AT-70CI at49bv802a-70tu PDF

    AT49BV320D

    Abstract: AT49BV320DT SA70 AT49BV
    Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout


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    3581D AT49BV320D AT49BV320DT SA70 AT49BV PDF

    48C20

    Abstract: SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom
    Text: Features • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – One Hundred Twenty-seven 32K Word 64K Bytes Main Sectors with Individual Write Lockout


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    3608C 48C20 SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom PDF

    S 3590A

    Abstract: AT49BV163D AT49BV163DT AT49BV163DT-70TU
    Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Fast Read Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Thirty-one 32K Word 64K Bytes Sectors with Individual Write Lockout


    Original
    PDF

    AT91 TC CAPTURE

    Abstract: AT91FR40162
    Text: Features • Incorporates the ARM7TDMI ARM® Thumb® Processor Core • • • • • • • • • • • • • – High-performance 32-bit RISC Architecture – High-density 16-bit Instruction Set – Leader in MIPS/Watt – Embedded ICE In-circuit Emulation


    Original
    32-bit 16-bit 1024K 128-bit 2632D 15-Sep-05 documents/doc6186 AT91 TC CAPTURE AT91FR40162 PDF

    lv8011

    Abstract: AT49BV8011 AT49BV8011T AT49LV8011 AT49LV8011T
    Text: Features • Single Supply for Read and Write: 2.7V to 3.3V BV , 3.0V to 3.3V (LV) • Access Time – 90 ns • Sector Erase Architecture • • • • • • • • • • • Fourteen 32K Word (64K Byte) Sectors with Individual Write Lockout Two 16K Word (32K Byte) Sectors with Individual Write Lockout


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    1265E 01/00/xM lv8011 AT49BV8011 AT49BV8011T AT49LV8011 AT49LV8011T PDF

    DFSDM

    Abstract: SAM9M10 K 2141 AC97 ARM926EJ-S AT91SAM ISO7816 NBC 3111 hc 541 rfid reader id-20
    Text: Features • 400 MHz ARM926EJ-S ARM Thumb® Processor – 32 KBytes Data Cache, 32 KBytes Instruction Cache, MMU • Memories • • • • – DDR2 Controller 4-bank DDR2/LPDDR, SDR/LPSDR – External Bus Interface supporting 4-bank DDR2/LPDDR, SDR/LPSDR, Static


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    ARM926EJ-STM 64-KByte 6355C 19-Apr-11 DFSDM SAM9M10 K 2141 AC97 ARM926EJ-S AT91SAM ISO7816 NBC 3111 hc 541 rfid reader id-20 PDF

    3582B

    Abstract: AT49BV322D AT49BV322DT AT49BV
    Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout


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    3582B AT49BV322D AT49BV322DT AT49BV PDF

    7SDMM-B0-2211-A

    Abstract: 980020-48-P2 mt29f2g08aadwp connector 7sdmm-b0-2211 MT29F8G08AAAWP MT29F8G08A MT29F2G08AAD BSS138 NXP 7SDMM 7SDMM-B0-2211
    Text: SCH-VAL314x-01 00 NXP Semiconductors LPC314x Validation Board Schematics 1 05 Review cleanup and Layout quotation 07/20/08 01 REFDES re-ordered; Release for Assembly 08/14/08 02 Corrected EBI Static nCS1 Addrs Space table, sht 13 10/16/08 03 Change pull-up value on GPIO0, GPIO1


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    SCH-VAL314x-01 LPC314x LPC3143 GPIO19; GPIO20 7SDMM-B0-2211-A 980020-48-P2 mt29f2g08aadwp connector 7sdmm-b0-2211 MT29F8G08AAAWP MT29F8G08A MT29F2G08AAD BSS138 NXP 7SDMM 7SDMM-B0-2211 PDF

    Untitled

    Abstract: No abstract text available
    Text: ARM-based Embedded MPU SAM9G35 DATASHEET Description The SAM9G35 is a member of the Atmel series of 400 MHz ARM926EJ-S embedded MPUs that support high bandwidth communication and advanced user interfaces and are optimized for industrial applications such as building automation,


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    SAM9G35 SAM9G35 ARM926EJ-Sâ 10-bit PDF

    ATMEL 234

    Abstract: how to derive sim 900 ARM926EJ-S AT91SAM ISO7816
    Text: Features • Incorporates the ARM926EJ-S ARM Thumb® Processor • • • • • • • • • • – DSP Instruction Extensions – ARM Jazelle® Technology for Java® Acceleration – 16-Kbyte Data Cache, 16-Kbyte Instruction Cache, Write Buffer


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    ARM926EJ-STM 16-Kbyte 16-bits 6462B 6-Sep-11 ATMEL 234 how to derive sim 900 ARM926EJ-S AT91SAM ISO7816 PDF

    AT49LV040

    Abstract: 496k AT49BV040 AT49LV040-70TC AT49BV040-12JC
    Text: Features • • • • • • • • • Single Voltage for Read and Write: 2.7V to 3.6V BV , 3.0V to 3.6V (LV) Fast Read Access Time – 70 ns Internal Program Control and Timer 16K Bytes Boot Block with Lockout Fast Chip Erase Cycle Time – 10 seconds


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    AT49BV/LV040 0679D 03/01/xM AT49LV040 496k AT49BV040 AT49LV040-70TC AT49BV040-12JC PDF

    SMT6T15CA

    Abstract: AT91M55800 diode b27 AT49BV16X4 AT91EB55 AT91M55800A qtz xtal sck 053 fuse box header 2x10 right angle AE20 DIODE
    Text: AT91EB55 Evaluation Board . User Guide Table of Contents Section 1 Overview. 1-1 1.1 1.2


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    AT91EB55 AT91EB55 06/01/0M SMT6T15CA AT91M55800 diode b27 AT49BV16X4 AT91M55800A qtz xtal sck 053 fuse box header 2x10 right angle AE20 DIODE PDF

    Be 555

    Abstract: No abstract text available
    Text: Features • • • • • • • • • • Single Supply for Read and Write: 2.7 to 3.6V Fast Read Access Time – 70 ns Internal Program Control and Timer Sector Architecture – One 16K Bytes Boot Block with Programming Lockout – Two 8K Bytes Parameter Blocks


    Original
    AT49BV002A 3353D Be 555 PDF

    Untitled

    Abstract: No abstract text available
    Text: Features • 2.7V to 3.6V Read/Write • Access Tim e - 90 ns • Sector Erase Architecture - AT49BV8004 T Fourteen 32K Word (64K Byte) Sectors with Individual W rite Lockout Two 16K Word (32K Byte) Sectors with Individual W rite Lockout Eight 4K Word (8K Byte) Sectors with Individual W rite Lockout


    OCR Scan
    AT49BV8004 AT49BV8011 AT49BV8004n 48-ball, 48-lead, O-142 PDF

    Untitled

    Abstract: No abstract text available
    Text: Features • 2.7V to 3.6V Read/Write • Access Time - 90 ns • Sector Erase Architecture - AT49BV8004 T Fourteen 32K Word (64K Byte) Sectors with Individual Write Lockout Two 16K Word (32K Byte) Sectors with Individual Write Lockout Eight 4K Word (8K Byte) Sectors with Individual Write Lockout


    OCR Scan
    AT49BV8004 AT49BV8011 265A-02/99/XM PDF

    Untitled

    Abstract: No abstract text available
    Text: Features • 2.7V to 3.3V Read/Write • Access Time - 90 ns • Sector Erase Architecture - Thirty 32K Word 64K Byte Sectors with Individual Write Lockout - Eight 4K Word (8K Byte) Sectors with Individual Write Lockout - Two 16K Word (32K Byte) Sectors with Individual Write Lockout


    OCR Scan
    32KWord Reading/P18 48-ball, AT49BV1604 PDF

    Untitled

    Abstract: No abstract text available
    Text: Features Single Supply Voltage, Range 2.7V to 3.6V Single Supply for Read and Write Fast Read Access Time - 55 ns Internal Program Control and Timer 8K Bytes Boot Block With Lockout Fast Erase Cycle Time - 10 seconds Byte-by-byte Programming - 30 ns/Byte typical


    OCR Scan
    BV010 LV010 0677D 07/99/xM PDF

    Untitled

    Abstract: No abstract text available
    Text: Features Single Voltage for Read and Write: 2.7V to 3.6V BV , 3.0V to 3.6V (LV) Fast Read Access Time -120 ns Internal Program Control and Timer 16K bytes Boot Block With Lockout Fast Chip Erase Cycle Time -1 0 seconds Byte-by-Byte Programming - 30 |is/Byte Typical


    OCR Scan
    AT49BV/LV040 120rray MO-142 AT49BV020 PDF