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    AT 5543 Search Results

    AT 5543 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AD5543BRZ Analog Devices 16-Bit I Out DAC Visit Analog Devices Buy
    AD5543SRMZ-EP Analog Devices 16-Bit I Out DAC Visit Analog Devices Buy
    LTC5543IUH#PBF Analog Devices 2.3GHz to 4GHz Hi Dynamic Rng Visit Analog Devices Buy
    AD5543CRMZ Analog Devices 16-Bit I Out DAC Visit Analog Devices Buy
    AD5543CRMZ-REEL7 Analog Devices 16-Bit I Out DAC Visit Analog Devices Buy
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    AT 5543 Price and Stock

    Microchip Technology Inc 1N5543A/TR

    Zener Diodes 25V 1MA 100 Ohms Voltage Regulator TR
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    Mouser Electronics 1N5543A/TR
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    Microchip Technology Inc CDLL5543A/TR

    Zener Diodes Voltage Regulator
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    Mouser Electronics CDLL5543A/TR
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    TE Connectivity 1-87631-0

    14 MODIV HSG DR MRKD .100 POL
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    Onlinecomponents.com 1-87631-0 5,543
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    Eaton Bussmann BK/MDA-3-R

    Fuse Miniature Slow Blow Acting 3A 250V Holder Cartridge 6.35 X 31.75mm Ceramic
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    Onlinecomponents.com BK/MDA-3-R 5,543
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    TE Connectivity 3-644038-2

    02P MTA100 CONN ASSY POL 15AU
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    Onlinecomponents.com 3-644038-2 5,543
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    Find more AT 5543 price and stock on Findchips.com

    AT 5543 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LTE 700Mhz Receiver

    Abstract: saw LTE LTC5540 LTC5541 LTE Receiver LTC5543 LTC5542
    Text: Electrical Specifications Subject to Change LTC5543 2.3GHz to 4GHz High Dynamic Range Downconverting Mixer DESCRIPTION FEATURES n n n n n n n n n n n n n Conversion Gain: 8.4dB at 2500MHz IIP3: 24.5dBm at 2500MHz Noise Figure: 10.2dB at 2500MHz High Input P1dB


    Original     		PDF LTC5543 700MHz 150nH 190MHz 150nH 2725MHz LTE 700Mhz Receiver saw LTE LTC5540 LTC5541 LTE Receiver LTC5542

    LTC5543

    Abstract: j349 Transistor J182 2595MHz j182 LTC5540 LTC5542 LTE bandpass filter j455 0603CS
    Text: LTC5543 2.3GHz to 4GHz High Dynamic Range Downconverting Mixer DESCRIPTION FEATURES n n n n n n n n n n n n Conversion Gain: 8.4dB at 2500MHz IIP3: 24.5dBm at 2500MHz Noise Figure: 10.2dB at 2500MHz 17.5dB NF Under +5dBm Blocking High Input P1dB 3.3V Supply, 660mW Power Consumption


    Original     		PDF LTC5543 2500MHz 660mW 20-Lead 600MHz LTC5543 26dBm 12dBm j349 Transistor J182 2595MHz j182 LTC5540 LTC5542 LTE bandpass filter j455 0603CS

    LT5554

    Abstract: LTC5540 LT5578 LTC5543 LTC5542 LT5570 LT5557 LT5568
    Text: LTC5543 2.3GHz to 4GHz High Dynamic Range Downconverting Mixer DESCRIPTION FEATURES n n n n n n n n n n n n n n Conversion Gain: 8.4dB at 2500MHz IIP3: 24.5dBm at 2500MHz Noise Figure: 10.2dB at 2500MHz 17.5dB NF Under +5dBm Blocking High Input P1dB 3.3V Supply, 660mW Power Consumption


    Original     		PDF LTC5543 2500MHz 660mW 20-Lead 600MHz LTC5543 26dBm 12dBm LT5554 LTC5540 LT5578 LTC5542 LT5570 LT5557 LT5568

    automotive ignition tip162

    Abstract: BU323A equivalent 2SA1046 BC337 rbe BU108 TIP102 Darlington transistor bc337 cross-reference 2SC190 replacement transistor BC337 BU326
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323A NPN Silicon Power Darlington Transistor The BU323A is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. COLLECTOR • VCE Sat Specified at – 40_C = 2.0 V Max. at IC = 6 A.


    Original     		PDF BU323A BU323A 204AA TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B automotive ignition tip162 BU323A equivalent 2SA1046 BC337 rbe BU108 TIP102 Darlington transistor bc337 cross-reference 2SC190 replacement transistor BC337 BU326

    2N3716 MOTOROLA

    Abstract: BU108 2SA1046 bd139 application note BUY69A BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N3715 2N3716 Silicon NPN Power Transistors . . . designed for medium–speed switching and amplifier applications. These devices feature: • • • • • Total Switching Time at 3 A typically 1.15 µs Gain Ranges Specified at 1 A and 3 A


    Original     		PDF 2N3791 2N3715 2N3716 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N3716 MOTOROLA BU108 2SA1046 bd139 application note BUY69A BU326 BU100

    LT624

    Abstract: lt6241 100v 30mA ROYAL FUSE mobile battery charger circuit using 7805 LT3478-1 LTC2351-14 reference accuracy ic 7805 TV Luxeon 3w rgb led circuit diagram 48v battery charger schematic diagram CS 213 Polymer protection
    Text: LINEAR TECHNOLOGY JUNE 2007 IN THIS ISSUE… Cover Article SiGe Differential Amplifier Drives High Speed ADCs at Hundreds of MHz .1 Kris Lokere and Adam Shou VOLUME XVII NUMBER 2 SiGe Differential Amplifier


    Original     		PDF 10ppm/ SE-164 LT624 lt6241 100v 30mA ROYAL FUSE mobile battery charger circuit using 7805 LT3478-1 LTC2351-14 reference accuracy ic 7805 TV Luxeon 3w rgb led circuit diagram 48v battery charger schematic diagram CS 213 Polymer protection

    ysi 44031

    Abstract: YSI 44018 YSI 400 thermistor mt 1389 de YSI 400 yellow springs thermistor 44907 YSI 44006 YSI 44007 YSI 4600 Precision Thermometer 44907 thermistor
    Text: YSI Precision Thermistors & Probes Introduction Thermistor Components Special Test Services Configure to Order Probes YSI 400 and 700 Series Reusable Probes YSI 4600 Precision Thermometers Technical Information Thermistors at YSI YSI developed the first interchangeable thermistor


    Original     		PDF

    2sa1046

    Abstract: 2SD436 BD133 BD878 2SC1013 2SC1943 BD419 2SC1014 IR425 2sc2168
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BDX33B BDX33C* Darlington Complementary Silicon Power Transistors PNP BDX34B BDX34C* . . . designed for general purpose and low speed switching applications. • High DC Current Gain — hFE = 2500 typ. at IC = 4.0


    Original     		PDF BDX33B, BDX33C, 33C/34B, 220AB BDX33B BDX33C* BDX34B BDX34C* TIP73B 2sa1046 2SD436 BD133 BD878 2SC1013 2SC1943 BD419 2SC1014 IR425 2sc2168

    thermafilm

    Abstract: 2088AB thermasil EB107/D sync nut eb107 ierc heatsink richco Silicone Rubber 35 Shore A thermafilm 1 mhw 592
    Text: AN1040/D Mounting Considerations For Power Semiconductors http://onsemi.com Prepared by: Bill Roehr APPLICATION NOTE INTRODUCTION Current and power ratings of semiconductors are inseparably linked to their thermal environment. Except for lead–mounted parts used at low currents, a heat exchanger


    Original     		PDF AN1040/D r14525 thermafilm 2088AB thermasil EB107/D sync nut eb107 ierc heatsink richco Silicone Rubber 35 Shore A thermafilm 1 mhw 592

    24V 20A SIEMENS battery charger

    Abstract: 48v to 24v buck an5435 an5430 an5424 AN5437 application note 54 ltc1149 LT1149 UPL1C222MRH SMP40P06
    Text: Application Note 54 March 1993 Power Conversion from Milliamps to Amps at Ultra-High Efficiency Up to 95% Dimitry Goder Randy Flatness INTRODUCTION High efficiency is frequently the main goal for power supplies in portable computers and hand-held equipment.


    Original     		PDF

    2SA1046

    Abstract: BU108 TR TO126 BD139 BUV98A equivalent BU326 BU100 mje15033 replacement
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP 2N5883 2N5884* NPN 2N5885 2N5886* Complementary Silicon High-Power Transistors . . . designed for general–purpose power amplifier and switching applications. • Low Collector–Emitter Saturation Voltage — VCE sat = 1.0 Vdc, (max) at IC = 15 Adc


    Original     		PDF 2N5883 2N5884* 2N5885 2N5886* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A 2SA1046 BU108 TR TO126 BD139 BUV98A equivalent BU326 BU100 mje15033 replacement

    ad7792 example code

    Abstract: 135208865AN-202 ad7793 example code ad7794 internal temperature AD7792 AD7794 AD7795 AN-202 AN-311 AN-397
    Text: AD779x Instrumentation Converters Frequently Asked Questions General FAQs What are the advantages and disadvantages of ∑-𝚫 ADCs? The penalty paid for the high resolution achievable with ∑-∆ technology has always been speed. The hardware has to operate at


    Original     		PDF AD779x si461 PH07763-0-10/08 ad7792 example code 135208865AN-202 ad7793 example code ad7794 internal temperature AD7792 AD7794 AD7795 AN-202 AN-311 AN-397

    sensorless pmsm c source code

    Abstract: source code for park and clark transformation park and clark transformation RTC 1307 TEMPERATURE CONTROLLER with pid stm32 STM32-library STM32F103 TEMPERATURE CONTROLLER pid stm32 STM32F103C8 PMSM stm32
    Text: Motor control with STM32 32-bit ARM -based MCU For 3-phase brushless motor vector drives December 2007 www.st.com/mcu Vector control made simple STMicroelectronics’ STM32 offers the performance of the industry-standard Cortex -M3 core at the service of


    Original     		PDF STM32 32-bit STM32 BRSTM32MC1207 sensorless pmsm c source code source code for park and clark transformation park and clark transformation RTC 1307 TEMPERATURE CONTROLLER with pid stm32 STM32-library STM32F103 TEMPERATURE CONTROLLER pid stm32 STM32F103C8 PMSM stm32

    BU108

    Abstract: transistor Bc 574 2n6107 MOTOROLA 2SC1943 MJ3055 to220 2SC1419 BU326 BU100 MJ*15033 2N6277
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV21 SWITCHMODE Series NPN Silicon Power Transistor 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications. • High DC current gain: hFE min. = 20 at IC = 12 A


    Original     		PDF BUV21 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BU108 transistor Bc 574 2n6107 MOTOROLA 2SC1943 MJ3055 to220 2SC1419 BU326 BU100 MJ*15033 2N6277

    25203

    Abstract: No abstract text available
    Text: MKP 380 Vishay BCcomponents AC and Pulse Metallized Polypropylene Film Capacitors MKP Radial Potted Type APPLICATIONS Low losses due to low contact resistance and low loss dielectric make these products suitable for applications where high currents at high frequency occur or high stability


    Original     		PDF 168x12 07-Oct-03 25203

    MIL-S-55433

    Abstract: HSR-830RT HSR-069RT HSR-790WT HSR-190RT 808-0021 HSR-003DT HSR-740RT 808-0004 HSR102
    Text: Hermetic Switch Reed Switches and Accessories See Us at www.hermeticswitch.com c ISO 9001 Certified Reed Switches 5 Highest quality reed switches feature contacts hermetically sealed in a protective atmosphere. Protected contacts mean reliable operation in wet, oily, dirty Ñ even explosive Ñ


    Original     		PDF

    2N4922

    Abstract: BU108 2SB655 BD390 MJ11021 2sb557 BDX54 2n6107 MOTOROLA 2SC1943 MJE2482
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV23 SWITCHMODE Series NPN Silicon Power Transistor 30 AMPERES NPN SILICON POWER METAL TRANSISTOR 325 VOLTS 250 WATTS . . . designed for high current, high speed, high power applications. • High DC current gain: HFE min. = 15 at IC = 8 A


    Original     		PDF BUV23 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 2N4922 BU108 2SB655 BD390 MJ11021 2sb557 BDX54 2n6107 MOTOROLA 2SC1943 MJE2482

    CSM 6850

    Abstract: mg80960xa 80960XA BV EI 303 3628 80960CA 80960KA 80960KB 80960MC M8259A 77106
    Text: 80960XA EMBEDDED 32-BIT MICROPROCESSOR WITH 33RD TAG BIT TO SUPPORT OBJECT-ORIENTED PROGRAMMING AND DATA SECURITY M ilita ry • Implements JIAWG 32-Bit ISA Standard ■ High-Performance Embedded Architecture — 25 MIPS Burst Execution at 25 MHz — 9.4 MIPS* Sustained Execution at


    OCR Scan     		PDF 80960XA 32-BIT 80-Bit CG/SALE/101789 CSM 6850 mg80960xa 80960XA BV EI 303 3628 80960CA 80960KA 80960KB 80960MC M8259A 77106

    Untitled

    Abstract: No abstract text available
    Text: MILrC-39003 Military Style Tantalum Capacitors MIL-C-39003 DESIGN AND CONSTRUCTION D.C. LEAKAGE D C. leakage shall be measured using the dc rated voltage at ± 2 percent at the applicable test temperature, after a maximum electri­ fication period of 5 minutes. A 1,000-ohm resistor shall be placed in


    OCR Scan     		PDF MILrC-39003 MIL-C-39003 000-ohm MIL-STD-202.

    Untitled

    Abstract: No abstract text available
    Text: Or, Cell C ustom Service at 1-86B-548-6132 USA Only ADC701 SHC702 B U R R -B R O W N APPLICATIONS • CONVERSION RATE: to 512kHz Over Temp • NO MISSING CODES AT 16 BITS • SPURIOUS-FREE DYNAMIC RANGE: 107dB • LOW NONLINEARITY: ±0.0015% • SELECTABLE INPUT RANGES: ±5V, ±10V,


    OCR Scan     		PDF 1-86B-548-6132 ADC701 SHC702 512kHz 107dB ADC701 16-bit

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN*5543 CMOS LSI LC89051V iS A fÊ V O i Digital Audio Interface Receiver Preliminary Overview Package Dimensions The LC89051V is for use in IEC958 form at data transmission between digital audio equipment. This LSI is used on the receiving side, and handles synchronization


    OCR Scan     		PDF LC89051V LC89051V IEC958 175A-SSOP24 LC89051V] 128fs, 384fs 512fs.

    KDM1960Z

    Abstract: ASPDM1960U
    Text: • “S tr ip e s o f Quality” ISO 9001 Certificale Mo. 5543 C e l l u l a r /P C S D u a l -B a n d R o o f M o u n t A n t e n n a Models: ASPDM1960 series • Unique Whip Design - special phasing coil achieves true 3dB operation at both frequency bands


    OCR Scan     		PDF ASPDM1960 ASPD1860 KDM1960Z ASPDM1960U

    siliconix fet

    Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
    Text: s S ilic o n ix FET Design Catalog 1979 Siliconix incorporated Printed in U.S.A. Siliconix incorporated reserves the right to make changes in the circuitry or specifications in this book at any time w ithout notice. Siliconix incorporated assumes no responsibility


    OCR Scan     		PDF J-23548 K24123 i39-40i NZ3766 53-C-03 siliconix fet Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10

    MC34114P

    Abstract: MC34114 34018 F232 GR12C
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MC34114 Speci fic at ion s and A p p l i c a t i o n s _ Inf ormation_ TELEPHONE SPEECH NETWORK WITH DIALER INTERFACE TELEPHONE SPEECH NETWORK WITH DIALER INTERFACE SILICON MONOLITHIC INTEGRATED CIRCUIT


    OCR Scan     		PDF MC34114 MC34114 EC-983-7 C2123 MC34114P 34018 F232 GR12C