micro-x 420
Abstract: AT-42036 AT-42036-BLK AT-42036-TR1 S21E
Text: Agilent AT-42036 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Features • High output power: 21.0 dBm typical P1 dB at 2.0 GHz 20.5 dBm typical P1 dB at 4.0 GHz • High gain at 1 dB compression: 14.0 dB typical G1 dB at 2.0 GHz 9.5 dB typical G1 dB at 4.0 GHz
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AT-42036
AT-42036
me10/-0
5980-1854E
5988-4735EN
micro-x 420
AT-42036-BLK
AT-42036-TR1
S21E
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AT-42035
Abstract: S21E
Text: Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42035 Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0␣ GHz 20.5 dBm Typical P1 dB at 4.0␣ GHz • High Gain at 1 dB Compression: 14.0 dB Typical G1 dB at 2.0␣ GHz 9.5 dB Typical G1 dB at 4.0␣ GHz
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AT-42035
AT-42035
RN/50
S21E
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10BASE2
Abstract: 10BASE5 DP8390 DP83901 DP83905 NE2000 TPI20 LA17-23
Text: November 1995 DP83905 AT LANTIC TM AT Local Area Network Twisted-Pair Interface Controller General Description Features The AT LANTIC AT Local Area Network Twisted-pair Interface Controller is a CMOS VLSI device designed for easy implementation of CSMA CD local area networks
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DP83905
NE2000
PLUS16TM
10BASE5
10BASE2
DP8390
DP83901
TPI20
LA17-23
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L-696
Abstract: 372M
Text: Toroid Inductor Schematic Electrical Specifications at 25OC Parameter Min. Typ. Max. Units Inductance 40 47 54 µH 3 Α 37.2 mΩ Tested at 20kHz - 100mV Current DCR 32.5 Lead Diameter .028 0.711 inches mm Single layer wound Physical Dimensions inches (mm)
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20kHz
100mV
L-696
L-696
372M
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AT-64023
Abstract: S21E
Text: Up to 4 GHz Linear Power Silicon Bipolar Transistor Technical Data AT-64023 Features Description • High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic
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AT-64023
AT-64023
5965-8916E
S21E
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transistor s11 s12 s21 s22
Abstract: No abstract text available
Text: Up to 4 GHz Linear Power Silicon Bipolar Transistor Technical Data AT-64023 Features Description • High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic
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AT-64023
AT-64023
5965-8916E
transistor s11 s12 s21 s22
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AT-64023
Abstract: S21E
Text: Up to 4 GHz Linear Power Silicon␣ Bipolar Transistor Technical Data AT-64023 Features Description • High Output Power: 27.5 dBm Typical P1 dB at 2.0␣ GHz 26.5 dBm Typical P1 dB at 4.0␣ GHz The AT-64023 is a high performance NPN silicon bipolar transistor housed in a hermetic
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AT-64023
AT-64023
S21E
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JIS C 5141
Abstract: OLD 122 562
Text: Miniature Aluminum Electrolytic Capacitors NRSZ Series LEADED LOW IMPEDANCE AT HIGH FREQUENCY RADIAL LEADS, POLARIZED ALUMINUM ELECTROLYTIC CAPACITORS FEATURES • VERY LOW IMPEDANCE • LONG LIFE AT 105OC 2000 ~ 5000 hrs. • HIGH STABILITY AT LOW TEMPERATURE
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105OC
JIS C 5141
OLD 122 562
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Untitled
Abstract: No abstract text available
Text: Miniature Aluminum Electrolytic Capacitors NRSZ Series LEADED LOW IMPEDANCE AT HIGH FREQUENCY RADIAL LEADS, POLARIZED ALUMINUM ELECTROLYTIC CAPACITORS FEATURES • VERY LOW IMPEDANCE • LONG LIFE AT 105OC 2000 ~ 5000 hrs. • HIGH STABILITY AT LOW TEMPERATURE
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105OC
whichever39
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stk 432 070
Abstract: stk 432 050 stk 412 -420 ic stk 432 050 stk 490 110 stk 496 430 ic stk 432 090 datasheet stk 407 070 stk 433 070 STK 442 130
Text: Developer's Guide Motorola g20 AT Commands 98-08901C68-E g20 AT Commands Motorola Communications Ltd., 2004 A subsidiary of Motorola Inc. All rights reserved. AT Commands 98-08901C68-E REVISION HISTORY Revision Date Purpose O 30 Jun 03 Initial Release A
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98-08901C68-E
stk 432 070
stk 432 050
stk 412 -420
ic stk 432 050
stk 490 110
stk 496 430
ic stk 432 090
datasheet stk 407 070
stk 433 070
STK 442 130
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AT-42036
Abstract: S21E micro-x 420
Text: AT-42036 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-42036 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT‑42036 is housed in a cost effective surface mount
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AT-42036
AT-42036
AT42036
5989-2653EN
AV02-0300EN
S21E
micro-x 420
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CI EEPROM 2816
Abstract: 31136 modem 56k sram pcr 4063 12697 scd 9104 SN 104 SCR image top 2556 en CRC10 CRC-10
Text: IDT77222 Micro SAR User Manual Version 1.0 September 8, 1998 Find IDT on the World Wide Web at: www.idt.com or call us at 1-800-345-7015 IDT is located at: 2975 Stender Way Santa Clara, California, USA 95054-3090 1998 Integrated Device Technology, Inc.
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IDT77222
CI EEPROM 2816
31136
modem 56k sram
pcr 4063
12697
scd 9104
SN 104 SCR image
top 2556 en
CRC10
CRC-10
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AT-42035
Abstract: AT-42035G S21E
Text: AT-42035 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Description Avago’s AT-42035 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT‑42035 is housed in a cost effective surface mount 100 mil micro-X
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AT-42035
AT-42035
AT42035
5989-2652EN
AV02-0299EN
AT-42035G
S21E
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pcr 4063
Abstract: SN 104 SCR image 31136 modem 56k sram OP 8368 0x2f68 IDT77252 ATM machine working circuit diagram bottle filling circuit diagram pti 8504
Text: IDT77252 ABR SAR User Manual Version 2.3 September 8, 1998 Find IDT on the World Wide Web at: www.idt.com or call us at 1-800-345-7015 IDT is located at: 2975 Stender Way Santa Clara, California, USA 95054-3090 1998 Integrated Device Technology, Inc. Printed U.S.A.
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IDT77252
pcr 4063
SN 104 SCR image
31136
modem 56k sram
OP 8368
0x2f68
ATM machine working circuit diagram
bottle filling circuit diagram
pti 8504
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INA-02186
Abstract: MA 166 234 N02 INA-02186-TR1 N02 N02 Transistor rf INA-02184 INA-02184-BLK INA-02184-TR1 INA-02186-BLK INA-02186-TR1
Text: Low Noise, Cascadable Silicon Bipolar MMIC Amplifier Technical Data INA-02184 INA-02186 Features • Cascadable 50 Ω Gain Block • Low Noise Figure: 2.0 dB Typical at 0.5 GHz • High Gain: 31 dB Typical at 0.5 GHz 26 dB Typical at 1.5 GHz • 3 dB Bandwidth:
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INA-02184
INA-02186
INA-02184
INA-02186
5965-9675E
MA 166
234 N02
INA-02186-TR1 N02
N02 Transistor rf
INA-02184-BLK
INA-02184-TR1
INA-02186-BLK
INA-02186-TR1
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Untitled
Abstract: No abstract text available
Text: ST Series Miniature Toggle Switches CONTACT RATINGS Q Power models - 6 Amps at 125 VAC, 3 Amps at 250 VAC or 7 Amps at 30 VDC resistive loads . B Dry Circuit models - 0.4 Volt-Amps (VA) max at 20 V max (AC or DC). UL models - 6 Amps at 125 VAC or 3 Amps at 250 VAC (75% power factor). UL file no. E66367.
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E66367.
LR54592-1
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Untitled
Abstract: No abstract text available
Text: What HEWLETT PACKARD Up to 4 GHz Linear Power Silicon Bipolar Transistor Technical Data AT-64023 Features • • • • Description The AT-64023 is a high perfor 27.5 dBm Typical Px^ at 2.0 GHz mance NPN silicon bipolar 26.5 dBm Typical Px ^ at 4.0 GHz transistor housed in a hermetic
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AT-64023
AT-64023
5965-8916E
0017fc
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LM308 application
Abstract: lm108 lm208p LM308 equivalent LM108 EQUIVALENT LM308 application notes
Text: LM108, LM108A, LM208, LM208A, LM308, LM308A OPERATIONAL AMPLIFIERS 02808, OCTOBER 1 9 8 3 - REVISED FEBRUARY 1991 D, JG, OR P PACKAGE Input Offset Current . . . 200 pA Max at 25°C fo r LM108, LM108A, LM208, LM208A TOP VIEW Input Bias Current . . . 2 nA Max at 25°C for
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LM108,
LM108A,
LM208,
LM208A,
LM308,
LM308A
LM208A
LM308 application
lm108
lm208p
LM308 equivalent
LM108 EQUIVALENT
LM308 application notes
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5757H
Abstract: A1318 U DP83905
Text: S e m i c o n d u c t o r DP83905 AT/LANTIC AT Local Area Network Twisted-Pair Interface Controller General Description Features The AT/LANTIC AT Local Area Network Twisted-pair Inter face Controller is a CMOS VLSI device designed for easy implementation of CSMA/CD local area networks.
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DP83905
DP83905
NE2000
PLUS16TM.
10BASE5
5757H
A1318 U
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Untitled
Abstract: No abstract text available
Text: VLSI Technology, inc . VL82C201 PC/AT-COMPATIBLE SYSTEM CONTROLLER FEATURES DESCRIPTION • Fully compatible with IBM PC/AT-type designs The VL82C201 PC/AT-Compatible System Controller replaces an 82C284 Clock Controller and an 82C288 Bus Controller both are used in ‘286-based
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VL82C201
VL82C201
82C284
82C288
286-based
82C84A
PAL16L8
T-90-20
100-PIN
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Untitled
Abstract: No abstract text available
Text: What H E W L E T T * mLliMPACKARD Up to 4 GHz Linear Power Silicon Bipolar Transistor Technical Data AT-64023 Features Description • High Output Power: 27.5 dBm Typical PldB at 2.0 GHz 26.5dBmTypicalPldBa t4.0 GHz • High Gain at 1 dB Compression: 12.5dBTypicaIGldBat2.0 GHz
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AT-64023
AT-64023
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bol 2-36
Abstract: No abstract text available
Text: What HEWLETT WLfiM PACKARD Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0800 Features • Usable Gain to 6.0 GHz • High Gain: 32.5 dB Typical at 0.1 GHz 23.5 dB Typical at 1.0 GHz • Low Noise Figure: 3.0 dB Typical at 1.0 GHz Description
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MSA-0800
MSA-0800
bol 2-36
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TPM1919-40
Abstract: SO47 TPM1919-40-311
Text: TPM1919-40-311 FEA TU RES: • HIGH POWER ■ PARTIALLY MATCHED TYPE ■ HERMETICALLY SEALED PACKAGE P 1dB = 47.0 dB m at 1.9 GHz ■ HIGH GAIN G 1dB = 13 dB at 1.9 GHz RF PERFORMANCE SPECIFICATIONS Ta = 25°C CHARACTERISTICS SYMBOL Output Power at 1dB Compression Point
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TPM1919-40-311
11-OA
TPM1919-40-
TPM1919-40
SO47
TPM1919-40-311
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Untitled
Abstract: No abstract text available
Text: What H E W L E T T * mLliM PACKARD Up to 6 GHz Medium Pow er Silicon Bipolar Transistor Technical Data AT-42035 Features • High Output Power: 21.0 dBm Typical PldB at 2.0 GHz 20.5dBmTypicalPldBa t4.0 GHz • High Gain at 1 dB Compression: 14.0dBTypicaIGldBat2.0 GHz
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AT-42035
AT-42035
Rn/50
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