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    IDEC Corporation ASLNHU-Y

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    ASLN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Switches & Pilot Devices Switches & Pilot Devices ø30mm - TWTD Series Relays & Sockets Signaling Lights TWTD Series — Full Size NEMA Pushbuttons TWTD Series: Heavy duty switches built to last Contactors Timers Key features: • Variety of button sizes up to 2 9/16” 65mm


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    PDF 800-262-IDEC

    transformer 220V to 24V

    Abstract: pw 380v 04 x
    Text: ø30 Series Switches & Pilot Lights Heavy duty switches & pilot lights offer both variety and reliability Endures harsh environments • Degree of protection: IP65 • UL, CSA approved, and EN compliant. Applicable Standards Mark File No. or Organization UL 508


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    PDF E68961 LR21451 EN60947-5-1 GB14048 60947-olenoid transformer 220V to 24V pw 380v 04 x

    HY5117404A

    Abstract: 168pin dram socket
    Text: HYM564414A N-Series 4Mx64-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM564414A is a 4M x 64-bit EDO mode CMOS DRAM module consisting of sixteen HY5117404A in 24/28 pin SOJ or TSOPII and two 16-bit BiCMOS line driver in TSSOP on a 168 pin glass-epoxy printed


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    PDF HYM564414A 4Mx64-bit 64-bit HY5117404A 16-bit HYM564414ANG/ATNG/ASLNG/ASLTNG A0-A10 DQ0-DQ63) 1EE15-10-JAN95 168pin dram socket

    ftm 230

    Abstract: LQFP144-P-2020-0 ML670100 DBAS 78
    Text: Semiconductor ML670100 Users’ Manual Version 1.0 of April, 1999 NOTICE 1. The information contained herein can change without notice owing to product and/or technical improvements. Before using the product, please make sure that the information being referred to


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    PDF ML670100 ftm 230 LQFP144-P-2020-0 ML670100 DBAS 78

    marking he 5pin mosfet driver

    Abstract: TSOT23-5 AS1358 AS1359 TSOT23
    Text: AS1358/AS1359 D a ta S he e t 150mA/300mA, Ultra-Low-Noise, High-PSRR Low Dropout Regulators 1 General Description 2 Key Features The AS1358/AS1359 are ultra-low-noise, low-dropout linear regulators specifically designed to deliver up to 150/300mA continuous output current, and can achieve


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    PDF AS1358/AS1359 150mA/300mA, 100Hz 100kHz 140mV 300mA AS1358/AS1359 150/300mA 140mV marking he 5pin mosfet driver TSOT23-5 AS1358 AS1359 TSOT23

    Sensick Sensors DS 60 DtR IR

    Abstract: SICK WL 25 123 ASI-S12343 SICK cross refeRENCE m8 connector to rs232 cable assignment ASI-M32321 Sensick ds 60 dtr ir sick WL 14 p 430 asi bus DOL wiring diagram motor
    Text: TECHNICAL DESCRIPTION AS-i Components Actuator-Sensor Interface: intelligent wiring 01_TB_ASI_Intro_en.qxd 09.08.2006 11:47 Uhr Seite 2 AS-i Applications AS-i Applications Central control of complex processes in the packaging industry with AS-i. To Control System


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    PDF ASI-S12233) ASI-M12) AS-680 Sensick Sensors DS 60 DtR IR SICK WL 25 123 ASI-S12343 SICK cross refeRENCE m8 connector to rs232 cable assignment ASI-M32321 Sensick ds 60 dtr ir sick WL 14 p 430 asi bus DOL wiring diagram motor

    LR48366

    Abstract: pUsh button start switch idec diode color code AC Transformer 120v to 12v Jumbo red LED ABD-100 push pull switches EN60947-1 EN60947-5-1 VDE0660-200
    Text: Oiltight Switches & Pilot Devices ø30mm - TWTD Series TWTD Series: Heavy duty switches built to last Key features include: • Variety of button sizes up to 2 9/16” 65mm • Rugged construction includes chrome plated zinc locking ring die cast zinc mounting threads, screw mounted contact blocks


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    PDF E70646 LR48366 800-262-IDEC 888-317-IDEC LR48366 pUsh button start switch idec diode color code AC Transformer 120v to 12v Jumbo red LED ABD-100 push pull switches EN60947-1 EN60947-5-1 VDE0660-200

    AS1358

    Abstract: AS1359 TSOT23
    Text: AS1358/AS1359 D a ta S he e t 150mA/300mA, Ultra-Low-Noise, High-PSRR Low Dropout Regulators 1 General Description 2 Key Features The AS1358/AS1359 are ultra-low-noise, low-dropout linear regulators specifically designed to deliver up to 150/300mA continuous output current, and can achieve


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    PDF AS1358/AS1359 150mA/300mA, 100Hz 100kHz 140mV 300mA AS1358/AS1359 150/300mA 140mV AS1358 AS1359 TSOT23

    ILR16

    Abstract: No abstract text available
    Text: 1 FJUL67Q3001-03 ML67Q3001 ハードウェアマニュアル 32 ビットマイクロコントローラ 第 3 版 2001 年 9 月作成 ご 注 意 1. 本書に記載された内容は製品改善及び技術改良等により将来予告なしに変更することがあります。したがって、


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    PDF FJUL67Q3001-03 ML67Q3001 Copyright2001OKIELECTRICINDUSTRYCO. ILR16

    2DR4

    Abstract: No abstract text available
    Text: SN74ALS232B 16 x 4 ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMORY SCAS251 - FEBRUARY 1988 - R EVISED SEPTEM BER 1993 • Independent Asynchronous Inputs and Outputs • 16 Words by 4 Bits • Data Rates From 0 to 40 MHz e Fall-Through Time. 14 ns Typ • 3-State Outputs


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    PDF SN74ALS232B SCAS251 300-mll 64-bit 2DR4

    Untitled

    Abstract: No abstract text available
    Text: SN54ABT863, SN74ABT863 9-BIT BUS TRANSCEIVERS WITH 3-STATE OUTPUTS SCBS201C- FEBRUARY 1991 - REVISED MAY 1997 State-of-the-Art EPIC-UB BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V


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    PDF SN54ABT863, SN74ABT863 SCBS201C- MIL-STD-883, JESD-17 -32-mA 64-mA SN54ABT863. SN74ABT863.

    LS386A

    Abstract: SCLS386A CO-AE
    Text: SN54LV14A, SN74LV14A HEX SCHMITT-TRIGGER INVERTERS SCLS386A - SEPTEMBER 1997 - REVISED APRIL 1998 EPIC Enhanced-Performance Implanted CMOS Process Typical V q l p (Output Ground Bounce) < 0.8 V at Vcc, Ta = 25°C Typical Vqhv (Output Vqh Undershoot) > 2 V at Vcc, t A = 25°C


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    PDF SN54LV14A, SN74LV14A SCLS386A JESD17 MIL-STD-883, 300-mil SN54LV14A. SN74LV14A LS386A CO-AE

    en55011

    Abstract: EN50295 APS75-30-SERIES EN55022-B CSA950 5EN3
    Text: UMBDA& APS75-30-SERIES Single output 72W AS-Interface Power Supply DENSEI-LAMBDA Unit Type Power Supply • Model name APS 75 - 30 | Output power Name of series j Nominal output voltage ■ Features • # • # AS-lnterface Power Supply Global scale wide input range: AC85-264V


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    PDF APS75-30-SERIES AC85-264V 85-264VAC UL1950 CSA950 EN60950CTÃ EN50295 /60HZ en55011 APS75-30-SERIES EN55022-B 5EN3

    M514400a

    Abstract: M514400 L06lC ZP-20S
    Text: blE H M D • 44TL5D3 GD22774 SOñ 5 1 4 4 0 0 A / A L / A S L S e r i e s — 1,048,576-word X4-bit Dynamic RAM HITACHI/ The Hitachi HM514400A/AL/ASL is a CMOS dynamic RAM organized 1,048,576-word x 4-bit. HM514400A/AL/ASL has realized higher density, higher perform ance and various functions by


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    PDF 44TL5G3 GD22774 HM514400A/AL/ASL 576-word 20-pin M514400a M514400 L06lC ZP-20S

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HYM5V64404A N-Series 4M X 64-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5V64404A is a 4M x 64-bit EDO mode CMOS DRAM module consisting of sixteen HY51V16404A in 24/28 pin SOJ or TSOP-II and two 16-bit BiCMOS line drivers in TSSOP on a 168 pin glass-epoxy printed circuit board.


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    PDF HYM5V64404A 64-bit HY51V16404A 16-bit HYM5V64404ANG/ATNG/ASLNG/ASLTNG 18-OmW A0-A11 DQ0-DQ63)

    TC59R1809

    Abstract: Toshiba Rambus IC TC59R1809VK ise 25001
    Text: TOSHIBA TC59R1809VK/HK PRELIMINARY 2,097,152 WORD x 9-BIT RAMBUS DYNAMIC RAM Description T h e T C 5 9 R 1 8 0 9 V K /H K R a m b u s D y n a m ic R A M RD R AM is a n e x t-g e n e ra tio n h ig h -s p e e d C M O S D R A M w ith a 2 ,0 9 7 ,1 5 2 x 9 -b it o rg a n iz a tio n a n d b u ilt-in slave logic. T h e 3 6 ,8 6 4 se n se a m p s o f th e D R AM co re are use d as c a c h e to a ch ie ve d a ta


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    PDF TC59R1809VK/HK H-227 TC59R1809VK/HK RD18011195 H-228 H-229 TC59R1809 Toshiba Rambus IC TC59R1809VK ise 25001

    gm73v1892

    Abstract: GM73V1892H 73V1892H gm73v1892h16l 73V1 70BIL LG GM73 gm73v1892h-16l gm73v
    Text: GM 73 V1892H16L GM 73V1892H 17L 2 ,0 9 7 ,1 5 2 W O R D S x/ 9 b i t LG Sem icon Co Ltd o e i l l i u u n O U .,l_ L U . R a m b u s D R A M Description T h e G M 7 3 V 1 8 9 2 H 1 6 L / G M 7 3 V 1 8 9 2 H 1 7 L R a m b u s D y n a m ic R a n d o m A c c e ss M e m o ry R D R A M is a


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    PDF V1892H16L 73V1892H SHP-32 GM73V1892H16L GM73V1892H17L gm73v1892 GM73V1892H 73V1 70BIL LG GM73 gm73v1892h-16l gm73v

    Untitled

    Abstract: No abstract text available
    Text: H IT A C H I/ NCU/MPU SGE D • MMTbEDM GÜ31DM4 Section 1. FPU Features • • 3TE ■ H I T 3 *' ^ ' /2'°r Floating-point performance (at 20 MHz, when coupled to an H32/200) — Add/subtract 0.5 |is — Multiply 0.45 |is — Divide 1.5 |is Natural extension of the H32 architecture


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    PDF 31DM4 H32/200)

    KT 3877

    Abstract: No abstract text available
    Text: RC4200 RC4200 Analog Multiplier Description Features The RC4200 analog multiplier has complete compensation for nonlinearity, the primary source of error and distortion. This multiplier also has three on­ board operational amplifiers designed specifically for


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    PDF RC4200 RC4200 1-800-722-7D74. KT 3877

    CDQ31

    Abstract: No abstract text available
    Text: HYUNDAI HYM5V64400A N-Series 4M X 64-bit CMOS DRAM MODULE DESCRIPTION The HYM5V64400A is a 4M x 64-bit Fast page mode CMOS DRAM module consisting of sixteen HY51V16400A in 24/28 pin SOJ or TSOP-II and two 16-bit BiCMOS line drivers in TSSOP on a 168 pin glass-epoxy printed circuit


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    PDF HYM5V64400A 64-bit HY51V16400A 16-bit 22\xF HYM5V64400ANG/ATNG/ASLNG/ASLTNG 1EF14-10-JUL95 CDQ31

    GM73V1892

    Abstract: concurrent RDRAM 72 concurrent rdram LG LG concurrent RDRAM 1I159 gm73v189 gm73v
    Text: GM73V1892 GM73V1682 LG Semicon Co.,Ltd. 2,097,152 WORDS x 8/9 BIT Rambus DRAM Description The GM73V1682 / GM73V1892 Rambus Dynamic Random Access Memory RDRAM is a next generation high-speed CMOS DRAM organized as 2,097,152 x8/9 bits and capable o f bursting up to 256


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    PDF GM73V1892 GM73V1682 GM73V1682 32-pin SVP-32 concurrent RDRAM 72 concurrent rdram LG LG concurrent RDRAM 1I159 gm73v189 gm73v

    U2506

    Abstract: No abstract text available
    Text: “ H Y U N D A I H Y M 5 V 7 2 1 3 A N - S e r i e s 1 M x 72_bjt CM 0S DRAM MODULE DESCRIPTION The HYM5V72103A is a 1M x 72-bit Fast page mode CMOS DRAM module consisting of sixteen HY51V4400B in 20/26 pin SOJ or TSOP-II, two HY51V4403B in 24/26 pin SOJ or TSOP-II and two 16-bit BiCMOS line drivers in


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    PDF HYM5V72103A 72-bit HY51V4400B HY51V4403B 16-bit HYM5V72103ANG/ATNG/ASLNG/ASLTNG SL-part35) 1EC13-10-AUG95 HYM5V72103ANG U2506

    Toshiba rdram

    Abstract: TC59R1809
    Text: TO S H IB A D IG IT A L IN TE G R A TE D CIRCUIT i N T t ^ K A t E D C IR C U IT T C 5 9 R 1 8 0 9 V K /H K TOSHIBA TFCHNICAL DATA SILICO N G> T E "C M O S TENTATIVE 2 ,0 9 7 ,152w ord x 9 - b i t Rambus DRAM INTRO DUCTIO N The TC59R1809VK/HK Rambus DRAM RDRAM is a next-generation*


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    PDF TC59R1809VK/HK 500MB/s. 32-pin TC59R1809VK/H SVP32-P-1125A) TC59R1809VK/HKâ Toshiba rdram TC59R1809

    DP8409AN

    Abstract: DP8409AD DP8409A D48A N48A V68A interface 64K RAM with 8086 MP dps409
    Text: DP8409A yw\National ÉHASemiconductor DP8409A Multi-Mode Dynamic RAM Controller/Driver General Description Operational Features D ynam ic m em ory system designs, which form erly required several support chips to drive the m em ory array, can now be im plem ented w ith a single 1C . , . the D P8409A M ulti­


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    PDF DP8409A tl/F/8409-23 16-Bit dpm09a 0P84300 DP8409AN DP8409AD D48A N48A V68A interface 64K RAM with 8086 MP dps409