ASI10666
Abstract: UFT30-28
Text: UFT30-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The UFT30-28 is Designed for Class A and B Power Ampliifiers Operating up to 500 MHz. PACKAGE STYLE .380 4L FLG. B .112 x 45° FEATURES: A S D Ø.125 NOM. FULL R J • PG = 7.0 dB min. at 25 W/400 MHz • ηD = 60 % Typical
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UFT30-28
UFT30-28
ASI10666
ASI10666
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ASI10666
Abstract: UFT30-28S
Text: UFT30-28S NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .380 4L STUD DESCRIPTION: .112x45° The ASI UFT30-28S is Designed for A B FEATURES: ØC • • • Omnigold Metalization System D H J G #8-32 UNC-2A F MAXIMUM RATINGS E 10 A IC VCB VCE 60 V 35 V PDISS
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Original
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PDF
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UFT30-28S
112x45°
UFT30-28S
ASI10666
ASI10666
|
ASI10666
Abstract: UFT30-28
Text: UFT30-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The UFT30-28 is Designed for Class A and B Power Ampliifiers Operating up to 500 MHz. PACKAGE STYLE .380 4L FLG. B .112 x 45° A S FEATURES: D Ø.125 NOM. FULL R J • PG = 7.0 dB min. at 25 W/400 MHz • η D = 60 % Typical
|
Original
|
PDF
|
UFT30-28
UFT30-28
ASI10666
ASI10666
|
