Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    ASI10536 Search Results

    ASI10536 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ASI10536 Advanced Semiconductor NPN SILICON RF POWER TRANSISTOR Original PDF

    ASI10536 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    ASI2307

    Abstract: ASI10536 9533a k 2057
    Text: ASI2307 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 2307 is Designed for General Purpose Class C Power Amplifier Applications up to 3000 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 9.5 dB min. at 7.0 W/2300 MHz


    Original     		ASI2307 ASI2307 ASI10536 9533a k 2057 PDF

    ASI10536

    Abstract: ASI2307
    Text: ASI2307 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 2307 is Designed for General Purpose Class C Power Amplifier Applications up to 2300 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 8.0 dB min. at 7.0 W/2300 MHz


    Original     		ASI2307 ASI10536 ASI2307 PDF

    ASI10536

    Abstract: ASI2307
    Text: ASI2307 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 2307 is Designed for General Purpose Class C Power Amplifier Applications up to 3000 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 9.5 dB min. at 7 W / 2300 MHz


    Original     		ASI2307 ASI10536 ASI10536 ASI2307 PDF