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    Mallory Sonalert Products Inc ASI12N35MTRQ

    BUZZER PIEZO 12V14X14MM SMD
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    Onlinecomponents.com ASI12N35MTRQ 600
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    Master Electronics ASI12N35MTRQ 600
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    Sager ASI12N35MTRQ 1
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    Intel Corporation EPCQ128ASI16N

    IC CONFIG DEVICE 128MBIT 16SOIC
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    DigiKey EPCQ128ASI16N Tube 7,886 1
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    Intel Corporation EPCQ64ASI16N

    IC CONFIG DEVICE 64MBIT 16SOIC
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    DigiKey EPCQ64ASI16N Tube 3,162 1
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    ASI-EZ ASI1492EBJ3

    DIN Rail Terminal Block End Cove
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    DigiKey ASI1492EBJ3 500 25
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    DComponents LA SI14IP2

    Infrared bare chip, 1450 nm, 3 m
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    DigiKey LA SI14IP2 100 100
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    ASI1 Datasheets (260)

    Part ECAD Model Manufacturer Description Curated Type PDF
    ASI1001 Advanced Semiconductor NPN SILICON RF POWER TRANSISTOR Original PDF
    ASI1002 Advanced Semiconductor NPN SILICON RF POWER TRANSISTOR Original PDF
    ASI1005 Advanced Semiconductor NPN SILICON RF POWER TRANSISTOR Original PDF
    ASI1010 Advanced Semiconductor NPN SILICON RF POWER TRANSISTOR Original PDF
    ASI1020 Advanced Semiconductor NPN SILICON RF POWER TRANSISTOR Original PDF
    ASI10430 Advanced Semiconductor Original PDF
    ASI10466 Advanced Semiconductor NPN RF POWER TRANSISTOR Original PDF
    ASI10467 Advanced Semiconductor NPN SILICON RF POWER TRANSISTOR Original PDF
    ASI10493 Advanced Semiconductor NPN SILICON RF POWER TRANSISTOR Original PDF
    ASI10494 Advanced Semiconductor Original PDF
    ASI10510 Advanced Semiconductor NPN SILICON RF POWER TRANSISTOR Original PDF
    ASI10511 Advanced Semiconductor NPN SILICON RF POWER TRANSISTOR Original PDF
    ASI10512 Advanced Semiconductor NPN SILICON RF POWER TRANSISTOR Original PDF
    ASI10513 Advanced Semiconductor NPN SILICON RF POWER TRANSISTOR Original PDF
    ASI10514 Advanced Semiconductor NPN SILICON RF POWER TRANSISTOR Original PDF
    ASI10515 Advanced Semiconductor NPN SILICON RF POWER TRANSISTOR Original PDF
    ASI10516 Advanced Semiconductor NPN SILICON RF POWER TRANSISTOR Original PDF
    ASI10517 Advanced Semiconductor NPN SILICON RF POWER TRANSISTOR Original PDF
    ASI10518 Advanced Semiconductor NPN SILICON RF POWER TRANSISTOR Original PDF
    ASI10519 Advanced Semiconductor NPN SILICON RF POWER TRANSISTOR Original PDF
    ...

    ASI1 Datasheets Context Search

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    ASI1002

    Abstract: transistor D 1002 ASI10523
    Text: ASI1002 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 1002 is Designed for General Purpose Class C Power Amplifier Applications up to 1500 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 12 dB min at 2 W / 1,000 MHz


    Original     		PDF ASI1002 ASI10523 ASI1002 transistor D 1002 ASI10523

    ASI1005

    Abstract: ASI10524
    Text: ASI1005 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 1005 is Designed for General Purpose Class C Power Amplifier Applications up to 1500 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 12 dB min at 5 W/ 1,000 MHz


    Original     		PDF ASI1005 ASI1005 ASI10524

    ASI1002

    Abstract: ASI10523 class E power amplifier
    Text: ASI1002 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 1002 is Designed for General Purpose Class C Power Amplifier Applications up to 1500 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 12 dB min at 2.0 W / 1,000 MHz


    Original     		PDF ASI1002 ASI1002 ASI10523 class E power amplifier

    ASI1001

    Abstract: ASI10522
    Text: ASI1001 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 1001 is Designed for General Purpose Class C Power Amplifier Applications up to 1500 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 12 dB min.at 1.0 W / 1,000 MHz


    Original     		PDF ASI1001 ASI10522 ASI1001 ASI10522

    ASI1020

    Abstract: ASI10526
    Text: ASI1020 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 1020 is Designed for General Purpose Class C Power Amplifier Applications up to 1500 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 10 dB min.at 20 W / 1,000 MHz


    Original     		PDF ASI1020 ASI10526 ASI1020 ASI10526

    1005 NPN

    Abstract: ASI1005 ASI10524
    Text: ASI1005 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 1005 is Designed for General Purpose Class C Power Amplifier Applications up to 1500 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 12 dB min at 5 W/ 1,000 MHz


    Original     		PDF ASI1005 1005 NPN ASI1005 ASI10524

    ASI1010

    Abstract: ASI10525
    Text: ASI1010 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 1010 is Designed for General Purpose Class C Power Amplifier Applications up to 1500 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 12 dB min. at 10 W/ 1,000 MHz


    Original     		PDF ASI1010 ASI10525 ASI1010 ASI10525

    ASI1010

    Abstract: ASI10525
    Text: ASI1010 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 1010 is Designed for General Purpose Class C Power Amplifier Applications up to 1500 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 12 dB min. at 10 W/ 1,000 MHz


    Original     		PDF ASI1010 C/W235 ASI1010 ASI10525

    ASI1020

    Abstract: ASI10526 asi-1020
    Text: ASI1020 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 1020 is Designed for General Purpose Class C Power Amplifier Applications up to 1500 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 10 dB min.at 20 W / 1,000 MHz


    Original     		PDF ASI1020 ASI1020 ASI10526 asi-1020

    ASI1001

    Abstract: ASI10522
    Text: ASI1001 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 1001 is Designed for General Purpose Class C Power Amplifier Applications up to 1500 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 12 dB min.at 1.0 W / 1,000 MHz


    Original     		PDF ASI1001 ASI10522 ASI1001 ASI10522

    TVV030A

    Abstract: IC 555 ASI10661
    Text: TVV030A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV030A is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .500 4L STUD A .112 x 45° FEATURES: A Ø .630 NOM C • Common Emitter • PG = 7.5 dB at 30 W/225 MHz • Omnigold Metalization System


    Original     		PDF TVV030A TVV030A IC 555 ASI10661

    MLN2027F

    Abstract: 5888 ASI10630
    Text: MLN2027F NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .250 2L FLG DESCRIPTION: A The ASI MLN2027F is Designed for Class A Linear Applications up to 2.0 GHz. ØD B .060 x 45° CHAMFER C E FEATURES: G • Class A Operation • PG = 8.0 dB at 0.5 W/2.0 GHz • Omnigold Metalization System


    Original     		PDF MLN2027F MLN2027F 5888 ASI10630

    ASI10530

    Abstract: ASI2010 ASI20
    Text: ASI2010 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG A The ASI 2010 is Designed for General Purpose Class C Power Amplifier Applications up to 2300 MHz. ØD B .060 x 45° C HA M F E R C E FEATURES: G L • PG = 5 dB min. at 10 W/ 2,000 MHz


    Original     		PDF ASI2010 ASI10530 ASI10530 ASI2010 ASI20

    CBSL150

    Abstract: ASI10586
    Text: CBSL150 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL150 is Designed for 900 MHz Class AB Cellular Base Station Amplifiers. PACKAGE STYLE .400 BAL FLG C .080x45° FEATURES: A B FULL R (4X).060 R • Internal Input/Output Matching • PG = 9.0 dB Typ. at 150 W/ 900 MHz


    Original     		PDF CBSL150 CBSL150 080x45° ASI10586 ASI10586

    HF250-50

    Abstract: ASI10615 250WPEP
    Text: HF250-50 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE 0.550 4L FLG The ASI HF250-50 is a 50 V epitaxial silicon NPN transistor, designed for SSB communications. E FEATURES: • PG = 14 dB min. at 250 W/30 MHz • IMD3 = 150 dBc max. at 250 W PEP


    Original     		PDF HF250-50 HF250-50 ASI10615 ASI10615 250WPEP

    ASI2223-4

    Abstract: ASI10531
    Text: ASI2223-4 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2NL FLG A The ASI 2223-4 is Designed for General Purpose Clacc C Applications up to 2.3 GHz. .0 2 5 x 4 5 ° 4 x .0 6 2 x 4 5 ° 2X B ØD C E F FEATURES: G H • Internal Input/Output Matching Networks


    Original     		PDF ASI2223-4 ASI2223-4 ASI10531

    VLB10-12S

    Abstract: ASI10734
    Text: VLB10-12S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VLB10-12S is Designed for 12.5 V, Large Signal Class C Amplifier Applications up to 50 MHz. PACKAGE STYLE .380 4L STUD FEATURES: .112x45° • Common Emitter • PG = 16 dB at 10 W/50 MHz • Omnigold Metalization System


    Original     		PDF VLB10-12S VLB10-12S 112x45° ASI10734 ASI10734

    ARU300

    Abstract: ASI10549 AUR300
    Text: AUR300 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The AUR 300 is Designed for Class C UHF Radar Applications up to 500 MHz. PACKAGE STYLE .400 BAL FLG A A B FULL R FEATURES: 4X.060 R C • Internal Input Matching Network • PG = 9.5 dB at 300 W/500 MHz


    Original     		PDF AUR300 ARU300 ARU300 ASI10549 AUR300

    MLN1027S

    Abstract: ASI10619
    Text: MLN1027S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MLN1027S is Designed for Class A, Linear Applications up to 1.0 GHz. PACKAGE STYLE .280 4L STUD A FEATURES: 45° C • Class A Operation • PG = 9.0 dB at 0.5 W/1.0 GHz • Omnigold Metalization System


    Original     		PDF MLN1027S MLN1027S ASI10619 ASI10619

    HF30-28S

    Abstract: ASI10605 HF30-28F
    Text: HF30-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF30-28S is a 28 V epitaxial RF NPN planar transistor designed primarily for SSB communications. The device utilizes emitter ballasting for improved ruggedness and reliability. PACKAGE STYLE .380 4L STUD


    Original     		PDF HF30-28S HF30-28S 112x45° HF30-28F ASI10605 HF30-28F

    TVV100

    Abstract: ASI10662
    Text: TVV100 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVV100 is Designed for Television Band III Applications up to 225 MHz. PACKAGE STYLE .400 8L FLG C D FEATURES: A B F U LL R • Common Emitter • PG = 11 dB at 100 W/225 MHz • Omnigold Metalization System


    Original     		PDF TVV100 TVV100 ASI10662

    Untitled

    Abstract: No abstract text available
    Text: 1N829A asi TEMP COMPENSATED ZENER DIODE DESCRIPTION: The ASI1N829A is a Silicon Temperature Compensated Zener Diode Designed for High Stability Voltage Reference Applications. MAXIMUM RATINGS Pto t 400 mW @ Ta = 50 °C -55 °C to +175 °C Tj T stg -65 °C to +175 °C


    OCR Scan     		PDF 1N829A ASI1N829A 818ED

    Untitled

    Abstract: No abstract text available
    Text: 1N1345B/BR asi SILICON POWER RECTIFIER DESCRIPTION: The ASI1N1345B/BR is Designed for General Purpose PowerSupply Applications. • 1N1345B = Anode to Stud • 1N1345BR = Cathode to Stud MAXIMUM RATINGS lo 6.0 A @ T C= 150 °C V rrm 300 V P diss 25 W @ T C= 150 °C


    OCR Scan     		PDF 1N1345B/BR ASI1N1345B/BR 1N1345B 1N1345BR

    1N1344B

    Abstract: No abstract text available
    Text: 1N1344B SILICON POWER RECTIFIER DESCRIPTION: The ASI1N1344B/1N1344BR is Designed for G eneral Purpose P ow er Supply Applications. PACKAGE STYLE DO- 4 • 1N1344B = C athode to Stud • 1N1344BR = A node to Stud s Y M B L MAXIMUM RATINGS MIN. MILLIMETERS MAX.


    OCR Scan     		PDF 1N1344B ASI1N1344B/1N1344BR 1N1344B 1N1344BR