MLN1027S Search Results

MLN1027S Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
MLN1027S		Advanced Semiconductor	NPN SILICON RF POWER TRANSISTOR		Original	PDF
MLN1027SL		Advanced Semiconductor	NPN SILICON RF POWER TRANSISTOR		Original	PDF
MLN1027SL		Advanced Semiconductor	NPN SILICON RF POWER TRANSISTOR		Original	PDF
MLN1027SS		Advanced Semiconductor	NPN SILICON RF POWER TRANSISTOR		Original	PDF

MLN1027S Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MLN1027S Abstract: ASI10619 Text: MLN1027S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MLN1027S is Designed for Class A, Linear Applications up to 1.0 GHz. PACKAGE STYLE .280 4L STUD A FEATURES: 45° C • Class A Operation • PG = 9.0 dB at 0.5 W/1.0 GHz • Omnigold Metalization System	Original	PDF	MLN1027S MLN1027S ASI10619 ASI10619
ASI10620 Abstract: MLN1027SL Text: MLN1027SL NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MLN1027SL is Designed for PACKAGE STYLE .280 4L PILL FEATURES: A • • • Omnigold Metalization System S D ØB MAXIMUM RATINGS G S IC 0.250 A VCBO 40 V VCEO 28 V VEBO 3.5 V ØC D E PDISS	Original	PDF	MLN1027SL MLN1027SL ASI10620 ASI10620
ASI10621 Abstract: MLN1027SS Text: MLN1027SS NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .205 4L STUD The ASI MLN1027SS is Designed for D A C FEATURES: • • • Omnigold Metalization System B G E F H #8-32UNC J MAXIMUM RATINGS 10 A IC MAXIMUM MINIMUM DIM inches / mm inches / mm	Original	PDF	MLN1027SS MLN1027SS 8-32UNC ASI10621 ASI10621
TRANSISTOR TC 137 Abstract: ASI10619 MLN1027S Text: MLN1027S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .280 4L STUD The ASI MLN1027S is Designed for A 45° FEATURES: • • • Omnigold Metalization System B C D J I E MAXIMUM RATINGS F IC 0.250 A VCBO 40 V H K 28 V VCEO 3.5 V VEBO PDISS	Original	PDF	MLN1027S MLN1027S ASI10619 TRANSISTOR TC 137 ASI10619
MLN1027SS Abstract: ASI10621 Text: MLN1027SS NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MLN1027SS is Designed for Class A, Linear Applications up to 1.0 GHz. PACKAGE STYLE .205 4L STUD D FEATURES: A C • Class A Operation • PG = 11 dB at 0.5 W/1.0 GHz • Omnigold Metalization System	Original	PDF	MLN1027SS MLN1027SS 8-32U ASI10621 ASI10621
MLN1027SL Abstract: ASI10620 Text: MLN1027SL NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MLN1027SL is Designed for Class A, Linear Applications up to 1.0 GHz. PACKAGE STYLE .280 4L PILL FEATURES: A • Class A Operation • PG = 9.0 dB at 0.5 W/1.0 GHz • Omnigold Metalization System	Original	PDF	MLN1027SL MLN1027SL ASI10620 ASI10620
tp2304 Abstract: TPV3100 TP9383 TP2330 MRF2001 PT9783 PT9780 tp8828f BLY93A mrf 406 application circuit Text: ASI Part Number AM1214-100 AM1214-200 AM1214-325 AM80912005 AM80912015 AM80912030 AM80912085 AM80912150 AM81214006 AM81214015 AM81214030 AM81214060 BLF147 BLF175 BLF177 BLF242 BLF244 BLF245 BLF246 BLF278 BLF368 BLU11/SL BLU15/12 BLU20/12 BLU30/12 BLU45/12	Original	PDF	AM1214-100 AM1214-200 AM1214-325 AM80912005 AM80912015 AM80912030 AM80912085 AM80912150 AM81214006 AM81214015 tp2304 TPV3100 TP9383 TP2330 MRF2001 PT9783 PT9780 tp8828f BLY93A mrf 406 application circuit
TPV3100 Abstract: TP3024A HF power amplifier TPV3100 PT9783 MRF466 mrf4070 tp9383 tp2304 mrf433 MRF492A Text: TABLE OF CONTENTS INTRODUCTION iii GENERAL INFORMATION iv QUALITY ASSURANCE & RELIABILITY v PRODUCT INDEX Alphanumeric vi RF POWER TRANSISTORS ! ! ! ! ! ! ! ! ! ! ! HF SSB HF MOSFETS VHF VHF & UHF MOSFETS UHF UHF MILITARY PULSED AVIONICS PULSED RADAR CW MICROWAVE	Original	PDF	twF150-50F HF150-50S HF250-50 HF100-28 HF220-28 HF220-50 TVU014 HF75-50S ASAT25 ASI4003 TPV3100 TP3024A HF power amplifier TPV3100 PT9783 MRF466 mrf4070 tp9383 tp2304 mrf433 MRF492A