ASE-375
Abstract: No abstract text available
Text: ASE www.vishay.com Vishay Huntington Wirewound Resistors, Industrial Power, Silicone Coated, Adjustable Edgewound Tubular FEATURES • High temperature silicone coating • Complete welded construction • Tight tolerance of 5 % for values above 1 • Excellent stability in operation < 3 % change in
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ASE0050
ASE0090
ASE0100
ASE0110
ASE0120
ASE0155
ASE0240
ASE0300
ASE0375
ASE0420
ASE-375
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FSE-240
Abstract: FSE-1500
Text: FVE / FSE EDGEWOUND RESISTORS 40 WATTS THRU 1500 WATTS H.E.I. Edgewound Resistors are are designed for AVE / ASE applications demanding maximum power dissipation in minimum space. Edgewounds are constructed of special alloy resistance wire, crimped, and wound on edge. High quality ceramic cores are used
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FSE-40
FSE-50
FSE-90
FSE-100
FSE-110
FSE-120
FSE-155
FSE-240
FSE-300
FSE-375
FSE-240
FSE-1500
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ic 8155
Abstract: "Slide Switch" DP4T SPST TOGGLE SWITCH OR SLIDE SWITCH SP6T switch 94hb ase42 SL220 MSSA204P1 MSSA4350RG miniature slide switch
Text: A B ASE/F Series - Page B3 SE Series - Page B9 STS Series - Page B11 TSS Series - Page B18 MSS Series - Page B21 MSSA Series - Page B31 MHS Series - Page B34 SSJ Series - Page B37 Need more technical information? Consult your Thomas & Betts sales office listed on the back cover
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MLL1300S
ic 8155
"Slide Switch" DP4T
SPST TOGGLE SWITCH OR SLIDE SWITCH
SP6T switch
94hb
ase42
SL220
MSSA204P1
MSSA4350RG
miniature slide switch
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Untitled
Abstract: No abstract text available
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . WIREWOUND RESISTORS CW - High Energy Wirewound Resistors, High Energy, Silicone Coated, Axial Lead KEY BENEFITS • • • • • • High continuous energy handling to 106.5 J High-temperature silicone coating
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IEC61000-4-5
us/50
CW010.
CW005.
CW02B.
VMN-PT0446-1505
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2SC2023
Abstract: No abstract text available
Text: 2SC2023 Silicon NPN Triple Diffused Planar Transistor V ICBO VCEO 300 V IEBO VEBO 6 V V BR CEO IC 2 A hFE 2SC2023 Unit VCB=300V 1.0max mA VEB=6V 1.0max mA IC=25mA 300min V VCE=4V, IC=0.5A 30min IB 0.2 A VCE(sat) IC=1.0A, IB=0.2A 1.0max V PC 40(Tc=25°C) W
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2SC2023
MT-25
300min
30min
10typ
75typ
100x100x2
50x50x2
2SC2023
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2SD2014
Abstract: 2SB1257 FM20 S8010
Text: 2SD2014 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1257 ICBO VCEO 80 V IEBO VEBO 6 V V(BR)CEO IC 4 A hFE VCE=2V, IC=3A 2000min Conditions Unit VCB=120V 10max µA VEB=6V 10max mA IC=10mA 80min V 10.1±0.2 IB 0.5 A VCE(sat) IC=3A, IB=3mA
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2SD2014
2SB1257)
O220F)
2000min
10max
80min
75typ
45typ
150x150x2
2SD2014
2SB1257
FM20
S8010
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2SD2015
Abstract: FM20
Text: 2SD2015 Silicon NPN Triple Diffused Planar Transistor IC 4 A 10max mA VEB=6V IC=10mA 120min hFE VCE=2V, IC=2A 2000min V IB 0.5 A VCE sat IC=2A, IB=2mA 1.5max PC 25(Tc=25°C) W VBE(sat) IC=2A, IB=2mA 2.0max V Tj 150 °C fT VCE=12V, IE=–0.1A 40typ MHz °C
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2SD2015
120min
2000min
40typ
10max
O220F)
2SD2015
FM20
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2SD2015
Abstract: FM20 w605
Text: 2SD2015 Silicon NPN Triple Diffused Planar Transistor V BR CEO IC 4 A 10max mA VEB=6V IC=10mA 120min hFE VCE=2V, IC=2A 2000min V IB 0.5 A VCE(sat) IC=2A, IB=2mA 1.5max PC 25(Tc=25°C) W VBE(sat) IC=2A, IB=2mA 2.0max V Tj 150 °C fT VCE=12V, IE=–0.1A 40typ
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2SD2015
2000min
40typ
100ms
150x150x2
50x50x2
2SD2015
FM20
w605
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Untitled
Abstract: No abstract text available
Text: 2SC2023 Silicon NPN Triple Diffused Planar Transistor mA V IEBO VEB=6V 1.0max mA 6 V V BR CEO IC=25mA 300min V 2 A hFE VCE=4V, IC=0.5A 30min IB 0.2 A VCE(sat) IC=1.0A, IB=0.2A 1.0max V PC 40(Tc=25°C) W fT VCE=12A, IE=–0.2A 10typ MHz Tj 150 °C COB VCB=10V, f=1MHz
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2SC2023
300min
30min
10typ
75typ
MT-25
150x150x2
100x100x2
50x50x2
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2SD2014
Abstract: 2SB1257 FM20
Text: 2SD2014 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1257 ICBO VCEO 80 V IEBO VEBO 6 V V(BR)CEO IC 4 A hFE VCE=2V, IC=3A 2000min Conditions Unit VCB=120V 10max µA VEB=6V 10max mA IC=10mA 80min V 10.1±0.2 IB 0.5 A VCE(sat) IC=3A, IB=3mA
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2SD2014
2SB1257)
O220F)
2000min
10max
80min
75typ
45typ
2SD2014
2SB1257
FM20
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2SD1796
Abstract: relay 12v 3a datasheet FM20
Text: 2SD1796 Built-in Avalanche Diode for Surge Absorbing Darlington Silicon NPN Triple Diffused Planar Transistor IC 4 A hFE 10max mA VEB=6V IC=10mA 60±10 VCE=4V, IC=3A 2000min V 0.5 A VCE sat IC=3A, IB=10mA 1.5max V PC 25(Tc=25°C) W fT VCE=12V, IE=–0.2A
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2SD1796
2000min
60typ
150x150x2
50x50x2
2SD1796
relay 12v 3a datasheet
FM20
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2SD1796
Abstract: FM20
Text: 2SD1796 Built-in Avalanche Diode for Surge Absorbing Darlington Silicon NPN Triple Diffused Planar Transistor 4 A hFE mA 60±10 VCE=4V, IC=3A 2000min V 0.5 A VCE sat IC=3A, IB=10mA 1.5max V PC 25(Tc=25°C) W fT VCE=12V, IE=–0.2A 60typ MHz Tj 150 °C COB
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2SD1796
2000min
60typ
150x150x2
50x50x2
2SD1796
FM20
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FSE12
Abstract: FSE-300 FSE-240 FSE-1500 ASE, silicone
Text: EDGEWOUND FIXED and ADJUSTABLE VITREOUS and SILICONE FVE FSE AVE ASE 40 WATTS thru ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ • • * • WATT FSE-40 FSE-50 FSE-90 FSE-100 FSE-110 FSE-120 FSE-155 FSE-240 FSE-300 FSE-375 FSE-420 FSE-500 FSE-750 FSE-1000 FSE-1500
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FSE-40
FSE-50
FSE-90
FSE-100
FSE-110
FSE-120
FSE-155
FSE-240
FSE-300
FSE-375
FSE12
FSE-1500
ASE, silicone
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STA411A
Abstract: TIC 160 M TIC 31 DDD11E
Text: SANKEN ELECTRIC CO LTD SSE ]> 7^0741 DDD11EÔ LTT « S A K J STA411A Silicon NPN Triple Diffused Planar •Maximum Ratings . Item Ta = 25“C Symbol Ratings Unit Collector-to-B ase Voltage VCBO 60 V C ollector-to-E m itter Voltage VCEO 60 V Em itter-to-Base Voltage
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DDD11EÔ
STA411A
STA300
STA400
45max
STA411A
TIC 160 M
TIC 31
DDD11E
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Untitled
Abstract: No abstract text available
Text: FAST RECOVERY MINIBRIDGE 10 AMPERES - TAB TERMINALS SIN G LE-PH ASE FULL-WAVE BRIDGES HEAT SINK AND C H A SSIS MOUNTING PKR-F SERIES PRV/leg 50V 100 V 200V Type No. P K R 0 5F PKR10F PK R 2 0 F PKR40F 1 000V 600 V 800 V PKR60F PKR80F 400V PKR100F ELECT RICA L C H A R A C T ER IST IC S PER LEG
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PKR10F
PKR60F
PKR80F
PKR40F
PKR100F
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Untitled
Abstract: No abstract text available
Text: FAST RECOVERY MINIBRIDGE 8 AMPERES SIN G LE-PH ASE FULL-WAVE BRIDGES HEAT SINK AND C H A SSIS MOUNTING PKR S E R IE S PRV/leg 50V 100V 200V 400V 600V 800V 1000V Type No. PKR05 PKR 10 PKR 20 PKR40 PKR 60 PKR 80 PKR100 E L E C T R IC A L C H A R A C T E R IS T IC S PER LEG
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PKR05
PKR40
PKR100
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Untitled
Abstract: No abstract text available
Text: HMC137 WL kh ^ M ICRO W AVE C O RPO RA TIO N GaAs MMIC BI-PHASE MODULATOR 6 -1 1 GHz FE B R U A R Y 1998 Features General Description CH IP INTEGRATES DIREC TLY INTO MIC DESIG NS T h e H M C 1 3 7 B i-P h ase M o d u lato r is designed to p h a se -m o d u la te an R F signal into re feren ce
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HMC137
T0G4125
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MPX 200 kPa motorola
Abstract: 201D 2200DP 2200A
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 200 kPa On-Chip Temperature Compensated & Calibrated Pressure Sensors The M PX2200 and MPX2201 series device is a silicon piezoresistive pressure sensor providing a highly accurate and linear voltage output — directly proportional to the
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PX2200
MPX2201
MPX2200
2201G
MPX 200 kPa motorola
201D
2200DP
2200A
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ASTM E235
Abstract: wj 5 smd 5962h9215301 QML-38535 SRAM TTL GDIP1-T28 LOR2568 LOR2568C ut7156c70pbar UT7156C55PBAR
Text: REVISIO N S LTR D ESC R IPTIO N D ATE YR-MO-DA A P P R O V ED Update boilerplate. Add devices 13 and 14. Add case outlines P and 9. Add C A G E 52088 as source of supply for devices 13 and 14. Editorial changes
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5962-R259-94.
5962-R097-96
5962-R122-96
96-0endor
ASTM E235
wj 5 smd
5962h9215301
QML-38535
SRAM TTL
GDIP1-T28
LOR2568
LOR2568C
ut7156c70pbar
UT7156C55PBAR
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cw53
Abstract: No abstract text available
Text: A COMPANY MODEL CW W irewound Resistors OF DALE C o a te d FEATURES • High performance for low cost • Complete welded construction • High-temperature silicone coating E L E C T R IC A L S P E C IF IC A T IO N S STANDARD ELECTRIC AL SPECIFICATIONS POWER RATING
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1-167k
CW-2C-14
CW-10
CW-10-3
cw53
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D44R4
Abstract: D44R2 D44R8 D44R1 D44R3 D44R7 D44R D44R5 D44R6
Text: Silicon Power Pac Transistors HIGH VOLTAGE The General Electric D44R is a red, silicone encapsulated, power transistor designed for various specific and general purpose applications such as: 120 V.A.C. line operated amplifiers; series, shunt and switching regulators; low thru high frequency inverters/
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T0-220
D44R4
D44R2
D44R8
D44R1
D44R3
D44R7
D44R
D44R5
D44R6
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QS113
Abstract: S3590 S692
Text: Dimensional Outlines The lead intervals shown in the dimensinal outlines are center-to-center dimensions at the root of the leads. Dimensions are typical values unless otherwise specified. The values in parentheses are reference values. U nit: m m S2386-18L
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S1226-18BQ,
S2386-18L
S5821-01,
G1115
GT735
G1961
S1190
S2366-18K
KPINAQ051EA
KPINA0052EA
QS113
S3590
S692
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7100A
Abstract: 7100D PX71
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 0 to 100 kPa 0 to 14.5 PSI High Zin> On-Chip Temperature Compensated & Calibrated, Silicon Pressure Sensors M PX7100 SERIES M otorola Preferred Devices The new MPX7100 series pressure sensor incorporates all the innovative features of
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MPX7100
MPX2000
PX7100
PX7100A
X7100D
PX7100G
7100G
7100A
7100D
PX71
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 0 to 10 kPa 0 to 1.45 PSI On-Chip Tem perature Compensated & Calibrated, Silicon Pressure Sensors MPX2010 MPX2012 SERIES Motorola Preferred Devices The MPX2010 and MPX2012 series silicon plezoresistive pressure sensors provide a
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MPX2010
MPX2012
X2012D
PX2010G
PX2012G
2010G
2012G
X2010D
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