STR20005
Abstract: STR20000 Series RU3M STR20000 sanken str 45
Text: STR20000 Series Switching Type Chopper • Self Oscillation Type Features ● ● ● ● ● Requires only 4 external components Small size and high efficiency Low switching noise Variable output voltage Use of Sanken semiconductors components ensures high reliability
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STR20000
STR20005
STR20005
STR20000 Series
RU3M
sanken str 45
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STR2012
Abstract: STR2005 STR2024 Sanken str2012 STR2013 str2000 series sanken STR2005 STR2000 Sanken str2015
Text: STR2000 Series Switching Type Chopper • Self Oscillation Type Features ● ● ● ● ● Requires only 3 external components Small size and high efficiency Low switching noise Variable output voltage Use of SANKEN's semiconductor elements ensures high reliability
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STR2000
STR2005
STR2012
STR2013
STR2015
STR2024
STR2024
Sanken str2012
str2000 series
sanken STR2005
Sanken str2015
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2SA1668
Abstract: 2SA1667 equivalent for 2sa1668 FM20
Text: 2SA1667/1668 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC4381/4382 VCB= VEBO –6 V IEBO IC –2 A V(BR)CEO –10max –10max µA –150 –200 V µA –10max VEB=–6V –150min IC=–25mA –200min –1 A hFE VCE=–10V, IC=–0.7A 60min
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2SA1667/1668
2SC4381/4382)
10max
150min
200min
60min
20typ
60typ
2SA1668
2SA1667
equivalent for 2sa1668
FM20
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2SD2141
Abstract: 2SD2141 equivalent FM20 DMS-10
Text: Equivalent circuit 2SD2141 Silicon NPN Triple Diffused Planar Transistor V ICBO VCEO 380±50 V IEBO VEBO 6 V V BR CEO 6(Pulse10) A hFE IC Symbol Conditions VCB=330V 10max µA VEB=6V 20max mA IC=25mA 330 to 430 V 1500min VCE=2V, IC=3A 1 A VCE(sat) IC=4A, IB=20mA
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2SD2141
Pulse10)
10max
20max
1500min
20typ
95typ
O220F)
150x150x2
100x100x2
2SD2141
2SD2141 equivalent
FM20
DMS-10
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2SA1488
Abstract: 2SA1488A FM20 2SC3851 A DSA0016503
Text: 2SA1488/1488A Silicon PNP Epitaxial Planar Transistor Complement to type 2SC3851/A ICBO VCB= –60 VEBO –6 V IEBO IC –4 A V(BR)CEO IB –1 A hFE PC 25(Tc=25°C) W VCE(sat) Tj 150 °C fT –55 to +150 °C COB VCB=–10V, f=1MHz Tstg VEB=–6V µA V –80
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2SA1488/1488A
2SC3851/A)
100max
60min
80min
40min
15typ
90typ
O220F)
2SA1488
2SA1488
2SA1488A
FM20
2SC3851 A
DSA0016503
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Untitled
Abstract: No abstract text available
Text: 2SC2023 Silicon NPN Triple Diffused Planar Transistor mA V IEBO VEB=6V 1.0max mA 6 V V BR CEO IC=25mA 300min V 2 A hFE VCE=4V, IC=0.5A 30min IB 0.2 A VCE(sat) IC=1.0A, IB=0.2A 1.0max V PC 40(Tc=25°C) W fT VCE=12A, IE=–0.2A 10typ MHz Tj 150 °C COB VCB=10V, f=1MHz
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2SC2023
300min
30min
10typ
75typ
MT-25
150x150x2
100x100x2
50x50x2
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2SA1667
Abstract: 2SA1668 FM20 22SA1
Text: 2SA1667/1668 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC4381/4382 Symbol 2SA1667 2SA1668 Unit •Electrical Characteristics (Ta=25°C) Conditions Symbol 2SA1667 2SA1668 Unit –10max –10max µA –150 –200 External Dimensions FM20 (TO220F)
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2SA1667/1668
2SC4381/4382)
2SA1667
2SA1668
10max
O220F)
2SA1667
2SA1668
FM20
22SA1
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2sc4024
Abstract: VEBO-15V M.P transistor FM20
Text: 2SC4024 High hFE LOW VCE sat Silicon NPN Epitaxial Planar Transistor ICBO VCEO 50 V VEBO 15 V IC 10 A hFE IB 3 A VCE(sat) PC 35(Tc=25°C) W fT Tj 150 °C COB VCB=10V, f=1MHz –55 to +150 °C 10.1±0.2 VCB=100V 10max µA IEBO VEB=15V 10max µA V(BR)CEO IC=25mA
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2SC4024
O220F)
10max
50min
24typ
150typ
100x100x2
2sc4024
VEBO-15V
M.P transistor
FM20
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2SD2014
Abstract: 2SB1257 FM20
Text: 2SD2014 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1257 ICBO VCEO 80 V IEBO VEBO 6 V V(BR)CEO IC 4 A hFE VCE=2V, IC=3A 2000min Conditions Unit VCB=120V 10max µA VEB=6V 10max mA IC=10mA 80min V 10.1±0.2 IB 0.5 A VCE(sat) IC=3A, IB=3mA
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2SD2014
2SB1257)
O220F)
2000min
10max
80min
75typ
45typ
2SD2014
2SB1257
FM20
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2SD2141 equivalent
Abstract: 2SD2141 FM20 DMS-10
Text: Equivalent circuit 2SD2141 Silicon NPN Triple Diffused Planar Transistor ICBO VCEO 380±50 V IEBO VEBO 6 V V BR CEO 6(Pulse10) A hFE IC Symbol Conditions VCB=330V 10max µA VEB=6V 20max mA IC=25mA 330 to 430 V 1500min VCE=2V, IC=3A 1 A VCE(sat) IC=4A, IB=20mA
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2SD2141
Pulse10)
10max
20max
1500min
20typ
95typ
O220F)
120mA
2SD2141 equivalent
2SD2141
FM20
DMS-10
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2SC4153
Abstract: 2SC4153 equivalent FM20 100X100X2
Text: 2SC4153 Silicon NPN Triple Diffused Planar Transistor Switchihg Transistor µA 120min V hFE VCE=4V, IC=3A 70 to 220 IB 3 A VCE(sat) IC=3A, IB=0.3A 0.5max PC 30(Tc=25°C) W VBE(sat) IC=3A, IB=0.3A 1.2max V Tj 150 °C fT VCE=12V, IE=–0.5A 30typ MHz °C
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2SC4153
120min
30typ
110typ
ulse14)
100max
O220F)
50x50x2
2SC4153
2SC4153 equivalent
FM20
100X100X2
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Untitled
Abstract: No abstract text available
Text: 10/08 PADA ENGINEERING S.r.l. Via G.B. Pirelli 11 I – 61030 Saltara PU - Italy Tel. +39 0721 899555 Fax +39 0721 897064 Email: pada@pada.it Web: www.pada.it SuperPlate SuperPlate: an efficient way to manage complex electronic systems having high concentrated
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145x25/280mm
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Untitled
Abstract: No abstract text available
Text: 多口継手 鉛カドミウムの含有量を 削減した溶融亜鉛めっき 技術を開発 ¬ 印 管継手 ねじ接続による中小口径鋼管用の管継手で、JIS B 2301に「ねじ込み式可鍛鋳鉄製管継手」として規定 されている継手です。JIS規格外品も一部製造しております。
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HL-K100-AC
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Untitled
Abstract: No abstract text available
Text: カタログ シール剤付き(ウィズシール) (ウィズシール 管継手 WS 継手 印 シール剤付き(ウィズシール) (ウィズシール 管継手 WS 継手 印 適用管種:JIS G 3452 配管用炭素鋼鋼管 JIS G 3442 水配管用亜鉛めっき鋼管
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HL-K257-
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2SB1257
Abstract: 2SD2014 FM20 nk co DSA0016505
Text: 2 k Ω (6 5 0Ω) E 2SB1257 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2014) A –10max µA –60min V hFE VCE=–4V, IC=–3A 2000min IB –1 A VCE(sat) IC=–3A, IB=–6mA –1.5max PC 25(Tc=25°C) W VBE(sat) IC=–3A, IB=–6mA –2max
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2SB1257
2SD2014)
10max
60min
2000min
150typ
75typ
O220F)
50x50x2
2SB1257
2SD2014
FM20
nk co
DSA0016505
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2SC4495
Abstract: FM20
Text: 2SC4495 High hFE LOW VCE sat Silicon NPN Triple Diffused Planar Transistor A hFE IB 1 A VCE(sat) PC 25(Tc=25°C) W fT Tj 150 °C COB –55 to +150 °C Tstg µA 50min V VCE=4V, IC=0.5A 500min IC=1A, IB=20mA 0.5max V VCE=12V, IE=–0.1A 40typ MHz VCB=10V,f=1MHz
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2SC4495
10max
50min
500min
40typ
30typ
45typ
60typ
85typ
2SC4495
FM20
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2SC4153
Abstract: FM20
Text: 2SC4153 Silicon NPN Triple Diffused Planar Transistor Switchihg Transistor µA 120min V hFE VCE=4V, IC=3A 70 to 220 IB 3 A VCE(sat) IC=3A, IB=0.3A 0.5max PC 30(Tc=25°C) W VBE(sat) IC=3A, IB=0.3A 1.2max V Tj 150 °C fT VCE=12V, IE=–0.5A 30typ MHz °C
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2SC4153
120min
30typ
110typ
100x100x2
150x150x2
50x50x2
2SC4153
FM20
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2SD2014
Abstract: 2SB1257 FM20 S8010
Text: 2SD2014 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1257 ICBO VCEO 80 V IEBO VEBO 6 V V(BR)CEO IC 4 A hFE VCE=2V, IC=3A 2000min Conditions Unit VCB=120V 10max µA VEB=6V 10max mA IC=10mA 80min V 10.1±0.2 IB 0.5 A VCE(sat) IC=3A, IB=3mA
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2SD2014
2SB1257)
O220F)
2000min
10max
80min
75typ
45typ
150x150x2
2SD2014
2SB1257
FM20
S8010
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2SD2015
Abstract: FM20
Text: 2SD2015 Silicon NPN Triple Diffused Planar Transistor IC 4 A 10max mA VEB=6V IC=10mA 120min hFE VCE=2V, IC=2A 2000min V IB 0.5 A VCE sat IC=2A, IB=2mA 1.5max PC 25(Tc=25°C) W VBE(sat) IC=2A, IB=2mA 2.0max V Tj 150 °C fT VCE=12V, IE=–0.1A 40typ MHz °C
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2SD2015
120min
2000min
40typ
10max
O220F)
2SD2015
FM20
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sk a 3120c
Abstract: 3050J SK 3052P sk 8120S sk a 3240c IC SK 8050S A8180 sanken ic regulator str sk 8050S IC SI-8050S 5V 3A
Text: Bulletin No I01 EC0 Sep.,1999 CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein in the
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responsib82-2-714-3700
H1-I01EC0-9909040ND
sk a 3120c
3050J
SK 3052P
sk 8120S
sk a 3240c
IC SK 8050S
A8180
sanken ic regulator str
sk 8050S
IC SI-8050S 5V 3A
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IC SI-8050S 5V 3A
Abstract: sk 3090c sk 8050S sk a 3120c A8180 SI-3242P toroidal transformer 22v td 3001N 3522V 3922v
Text: Bulletin No I01 EC0 Sep.,1999 CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein in the
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TRANSISTOR 132-gd
Abstract: TRANSISTORS 132 GD equivalent io transistor 131-G bbc ds diodes DS 1,8 transistor vergleichsliste aeg diode Si 61 L AF124 Transistor Vergleichsliste DDR OC1044 bbc ds diodes
Text: Vergleichsliste Halbleiter Bauelemente In h a lt: Einleitung Typenbezeichnung und Form elzeichen G e g e n ü b e r s t e ll u n g n a c h A l p h a b e t : T ransistoren G leichrichterdioden Leistungs-Zenerdioden V e rg le ic h nach T y p e n g ru p p e n
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OCR Scan
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06o3H
TRANSISTOR 132-gd
TRANSISTORS 132 GD
equivalent io transistor 131-G
bbc ds diodes DS 1,8
transistor vergleichsliste
aeg diode Si 61 L
AF124
Transistor Vergleichsliste DDR
OC1044
bbc ds diodes
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2SD234
Abstract: 2SD235 2SD235 Toshiba 2so234 SD235 2SD2354 2SB434 2SB435 transistor 2sd234 8bb4
Text: r SILICON NPN DIFFUSED JUNCTION TRANSISTOR o • • 2 s d 234 À 2 s d 235 U n it in mm Audio Power A m p l if i e r A p p l i c a t i o n s ; V CE sat = Q 8 V 1 0 .3 M A X . # 3 ,6 ± a 3 ( T yp .) d c = l A ) 2SD235 ^ : P c = 3 5 w (To = 3 5 ^ ) 3^9 2 S B 4 34 , Z S B i 35 t ^ 7') t
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2so234
2sd235
2SB434,
ZSB434
2SB435.
2SD234
220AB
2SD235
2SD235 Toshiba
SD235
2SD2354
2SB434
2SB435
transistor 2sd234
8bb4
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2SD553
Abstract: Toshiba 2sd553
Text: TOSHIBA 2SD553 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD553 HIGH CURRENT SWITCHING APPLICATIONS PO W ER A M PLIFIER APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10.3MAX Low Saturation Voltage : V q ^ sat “ 0.4V (Max.) (at Complementary to 2SB553.
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2SD553
2SB553.
2-10A1A
O-220AB
2SD553
Toshiba 2sd553
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