Untitled
Abstract: No abstract text available
Text: MICRONAS INTERMETALL ASC 3553O Audio Stereo Codec MICRONAS Edition Aug. 5, 1998 6251-333-3DS ASC 3553O Contents Page Section Title 3 1. Introduction 3 3 3 3 3 4 4 4 5 5 5 5 5 6 6 6 6 7 2. 2.1. 2.2. 2.3. 2.4. 2.5. 2.6. 2.7. 2.8. 2.9. 2.10. 2.11. 2.12. 2.13.
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3553O
6251-333-3DS
3553O
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SM5362000
Abstract: SM5362000-7
Text: SM5362000 March 1994 Rev 2 SMART Modular Technologies SM5362000 8MByte 2M x 36 CMOS DRAM Module General Description Features The SM5362000 is a high performance, 8-megabyte dynamic RAM module organized as 2M words by 36 bits, in a 72-pin, leadless, single-in-line memory module
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SM5362000
SM5362000
72-pin,
60/70/80ns
264mW
132mW
SM5362000-7
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Hitachi DSA00164
Abstract: Nippon capacitors
Text: HB56SW3272ESK-5/6 256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit, 4k Refresh, 2 Bank Module 36 pcs of 16M × 4 components ADE-203-872B (Z) Rev. 1.0 June 23, 1998 Description The HB56SW3272ESK belong to 8-byte DIMM (Dual in-line Memory Module) family , and have been
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HB56SW3272ESK-5/6
256MB
32-Mword
72-bit,
ADE-203-872B
HB56SW3272ESK
64-Mbit
HM5165405)
16-bit
Hitachi DSA00164
Nippon capacitors
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Hitachi DSA00164
Abstract: Nippon capacitors
Text: HB56SW3272ESNK-6A/7A 256MB Unbuffered EDO DRAM DIMM 32M-word x 72-bit, 4k Refresh, 2 Bank Module 36 pieces of 16M × 4 components ADE-203-840 (Z) Preliminary Rev. 0.0 Oct. 29, 1997 Description The HB56SW3272ESNK is a 32M × 72 dynamic RAM module, mounted 36 pieces of 64-Mbit DRAM
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HB56SW3272ESNK-6A/7A
256MB
32M-word
72-bit,
ADE-203-840
HB56SW3272ESNK
64-Mbit
HM5165405)
Hitachi DSA00164
Nippon capacitors
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HM5165405
Abstract: Hitachi DSA00196 Nippon capacitors
Text: HB56SW3272ESNK-6A/7A 256MB Unbuffered EDO DRAM DIMM 32M-word x 72-bit, 4k Refresh, 2 Bank Module 36 pcs of 16M × 4 components ADE-203-840 (Z) Preliminary Rev. 0.0 Oct. 29, 1997 Description The HB56SW3272ESNK is a 32M × 72 dynamic RAM module, mounted 36 pieces of 64-Mbit DRAM
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HB56SW3272ESNK-6A/7A
256MB
32M-word
72-bit,
ADE-203-840
HB56SW3272ESNK
64-Mbit
HM5165405)
HM5165405
Hitachi DSA00196
Nippon capacitors
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256Kx1 dram pinout
Abstract: No abstract text available
Text: SM536256 August 1994 Rev 2 SMART Modular Technologies SM536256 1MByte 256K x 36 CMOS DRAM Module General Description Features The SM536256 is a high performance, 1-megabyte dynamic RAM module organized as 256K words by 36 bits, in a 72-pin, leadless, single-in-line memory module
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SM536256
SM536256
72-pin,
256Kx4
256Kx1
70/80/100ns
256Kx1 dram pinout
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Untitled
Abstract: No abstract text available
Text: EM MICROELECTRONIC - MARIN SA EM4083 3D Active Long Range Front-End General Description Features The EM4083 is a CMOS integrated circuit intended for hands-free or multidimensional wireless communication systems at 125kHz. It integrates a high sensitivity low frequency AM receiver
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EM4083
EM4083
125kHz.
115kHz
140kHz
4083-DS
22-Jul-10
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EM4083TP16A-007
Abstract: EM4083 hf ask lf Receiver tuning capacitors EM4083 AN415 C4083 EM6640 TSSOP16 TSSOP-16 amplifier diagram
Text: EM MICROELECTRONIC - MARIN SA EM4083 3D Active Long Range Front-End General Description Features The EM4083 is a CMOS integrated circuit intended for hands-free or multidimensional wireless communication systems at 125kHz. It integrates a high sensitivity low frequency AM receiver
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EM4083
EM4083
125kHz.
115kHz
140kHz
4083-DS
22-Jul-10
EM4083TP16A-007
hf ask lf Receiver
tuning capacitors EM4083
AN415
C4083
EM6640
TSSOP16
TSSOP-16
amplifier diagram
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Untitled
Abstract: No abstract text available
Text: SM5364000 June 1994 Rev 2 SMART Modular Technologies SM5364000 16MByte 4M x 36 CMOS DRAM Module (2K Refresh) General Description Features The SM5364000 is a high performance, 16-megabyte dynamic RAM module organized as 4M words by 36 bits, in a 72-pin, leadless, single-in-line memory module
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SM5364000
SM5364000
16MByte
16-megabyte
72-pin,
60/70/80ns
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Untitled
Abstract: No abstract text available
Text: SM5364400 August 1994 Rev 1 SMART Modular Technologies SM5364400 16MByte 4M x 36 CMOS DRAM Module General Description Features The SM5364400 is a high performance, 16-megabyte dynamic RAM module organized as 4M words by 36 bits, in a 72-pin, leadless, single-in-line memory module
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SM5364400
SM5364400
16MByte
16-megabyte
72-pin,
60/70/80ns
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SM5361000QC-6
Abstract: No abstract text available
Text: SM5361000QC May 1995 Rev 1 SMART Modular Technologies SM5361000QC 4MByte 1M x 36 CMOS DRAM Module (using Quad CAS DRAM) General Description Features The SM5361000QC is a high performance, 4-megabyte dynamic RAM module organized as 1M words by 36 bits, in a 72-pin, leadless, single-in-line memory module (SIMM)
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SM5361000QC
72-pin,
60/70/80ns
SM5361000QC-6
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Untitled
Abstract: No abstract text available
Text: SM536256LP September 1996 Rev 2 SMART Modular Technologies SM536256LP 1MByte 256K x 36 CMOS DRAM Module (Low Profile) General Description Features The SM536256LP is a high performance, 1-megabyte dynamic RAM module organized as 256K words by 36 bits, in a 72-pin, leadless, SIMM package.
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SM536256LP
SM536256LP
72-pin,
256Kx18
70/80/100ns
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Untitled
Abstract: No abstract text available
Text: SM536512LP September 1996 Rev 1 SMART Modular Technologies SM536512LP 2MByte 512K x 36 CMOS DRAM Module (Low Profile) General Description Features The SM536512LP is a high performance, 2-megabyte dynamic RAM module organized as 512K words by 36 bits, in a 72-pin, leadless, SIMM package.
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SM536512LP
SM536512LP
72-pin,
256Kx18
70/80/100ns
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Untitled
Abstract: No abstract text available
Text: SM536512W April 1996 Rev 0 SMART Modular Technologies SM536512W 2MByte 512K x 36 CMOS DRAM Module General Description Features The SM536512W is a high performance, 2-megabyte dynamic RAM module organized as 512K words by 36 bits, in a 72-pin, leadless, SIMM package.
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SM536512W
SM536512W
72-pin,
512Kx8
512Kx1
60/70/80ns
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Untitled
Abstract: No abstract text available
Text: SM536023001P4UU December 1996 Rev 1 SMART Modular Technologies SM536023001P4UU 8MByte 2M x 36 CMOS DRAM Module (1Mx16 based) General Description Features The SM536023001P4UU is a high performance, 8-megabyte dynamic RAM module organized as 2M words by 36 bits, in a 72-pin, leadless, single-in-line
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SM536023001P4UU
1Mx16
SM536023001P4UU
72-pin,
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Untitled
Abstract: No abstract text available
Text: SM536028A01QXSX November 1994 Rev 0 SMART Modular Technologies SM536028A01QXSX 8MByte 2M x 36 CMOS DRAM Module (QCAS Parity) General Description Features The SM536028A01QXSX is a high performance, 8-megabyte dynamic RAM module organized as 2M words by 36 bits, in a 72-pin, leadless, single-in-line
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SM536028A01QXSX
SM536028A01QXSX
72-pin,
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NJM2512
Abstract: NJM2512A NJM2512ARB1
Text: NJM2512A 47µ µF AC-Coupling Capacitor Low Voltage Video Driver with LPF •GENERAL DESCRIPTION The NJM2512A is a Low Voltage Video Amplifier featuring small AC-coupling Capacitor. The NJRC original Technology “ASC Advanced SAG Correction ” realizes 47µF AC-Coupling Capacitor which enables to downsize
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NJM2512A
NJM2512A
NJM2512:
NJM2512
NJM2512ARB1
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SM5362000QC-8
Abstract: SM5362000QC-7 SM5362000QC
Text: SM5362000QC December 1995 Rev 1 SMART Modular Technologies SM5362000QC 8MByte 2M x 36 CMOS DRAM Module (using Quad CAS DRAM) General Description Features The SM5362000QC is a high performance, 8-megabyte dynamic RAM module organized as 2M words by 36 bits,
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SM5362000QC
72-pin,
60/70/80ns
SM5362000QC-8
SM5362000QC-7
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Untitled
Abstract: No abstract text available
Text: SM5361000 July 1995 Rev 3 SMART Modular Technologies SM5361000 4MByte 1M x 36 CMOS DRAM Module - Low Profile General Description Features The SM5361000 is a high performance, 4-megabyte dynamic RAM module organized as 1M words by 36 bits, in a 72-pin, leadless single-in-line memory module
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SM5361000
72-pin,
60/70/80ns
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Untitled
Abstract: No abstract text available
Text: SM5362100QC August 1994 Rev 1 SMART Modular Technologies SM5362100QC 8MByte 2M x 36 CMOS DRAM Module General Description Features The SM5362100QC is a high performance, 8-megabyte dynamic RAM module organized as 2M words by 36 bits, in a 72-pin, leadless, single-in-line memory module
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SM5362100QC
SM5362100QC
72-pin,
74F08
60/70/80ns
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SC M E M O R Y / A S I C SÖE J> b3L7251 00074^ T35 IM0T3 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4M x 9 Bit Dynamic Random Access Memory Module MCM94000 MCM9L4000 MCM94030 The M C M 94000 is a 36M dynam ic random access m em ory (DRAM ) m odule
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OCR Scan
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b3L7251
30-lead
4100A
9L4000
MCM94030L60
MCM94030L70
MCM94030L80
MCM9L4030L60
MCM9L4030L70
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Untitled
Abstract: No abstract text available
Text: NJM2512A 47µF AC-Coupling Capacitor Low Voltage Video Driver with LPF pGENERAL DESCRIPTION The NJM2512A is a Low Voltage Video Amplifier featuring small AC-coupling Capacitor. The NJRC original Technology “ASC Advanced SAG Correction ” realizes 47µF AC-Coupling Capacitor which enables to downsize
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NJM2512A
NJM2512A
NJM2512:
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Untitled
Abstract: No abstract text available
Text: SM53616100UP3UU October 1996 Rev 2A SMART Modular Technologies SM53616100UP3UU 64MByte 16M x 36 CMOS DRAM Module General Description Features The SM53616100UP3UU is a high performance, 64-megabyte dynamic RAM module organized as 16M words by 36 bits, in a 72-pin, leadless, single-in-line
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SM53616100UP3UU
SM53616100UP3UU
64MByte
64-megabyte
72-pin,
SM536161002P3UU
SM536161004P3UU
16Mx1
64MByte
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1mx1 DRAM
Abstract: DRAM 1Mx1 DRAM 1Mx1 1000
Text: SM536028A02P4SX February 1996 Rev 0 SMART Modular Technologies SM536028A02P4SX 8MByte 2M x 36 CMOS DRAM Module General Description Features The SM536028A02P4SX is a high performance, 8-megabyte dynamic RAM module organized as 2M words by 36 bits, in a 72-pin, leadless, single-in-line
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SM536028A02P4SX
SM536028A02P4SX
72-pin,
1mx1 DRAM
DRAM 1Mx1
DRAM 1Mx1 1000
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