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    AS7C181026LL Search Results

    AS7C181026LL Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AS7C181026LL-100BC Alliance Semiconductor 1.8V 64K x 16 Intelliwatt low power CMOS SRAM Original PDF
    AS7C181026LL-100BI Alliance Semiconductor 1.8V 64K x 16 Intelliwatt low power CMOS SRAM Original PDF
    AS7C181026LL-100TC Alliance Semiconductor 1.8V 64K x 16 Intelliwatt low power CMOS SRAM Original PDF
    AS7C181026LL-100TI Alliance Semiconductor 1.8V 64K x 16 Intelliwatt low power CMOS SRAM Original PDF
    AS7C181026LL-55BC Alliance Semiconductor 1.8V 64K x 16 Intelliwatt low power CMOS SRAM Original PDF
    AS7C181026LL-55BI Alliance Semiconductor 1.8V 64K x 16 Intelliwatt low power CMOS SRAM Original PDF
    AS7C181026LL-55TC Alliance Semiconductor 1.8V 64K x 16 Intelliwatt low power CMOS SRAM Original PDF
    AS7C181026LL-55TI Alliance Semiconductor 1.8V 64K x 16 Intelliwatt low power CMOS SRAM Original PDF
    AS7C181026LL-70BC Alliance Semiconductor 1.8V 64K x 16 Intelliwatt low power CMOS SRAM Original PDF
    AS7C181026LL-70BI Alliance Semiconductor 1.8V 64K x 16 Intelliwatt low power CMOS SRAM Original PDF
    AS7C181026LL-70TC Alliance Semiconductor 1.8V 64K x 16 Intelliwatt low power CMOS SRAM Original PDF
    AS7C181026LL-70TI Alliance Semiconductor 1.8V 64K x 16 Intelliwatt low power CMOS SRAM Original PDF

    AS7C181026LL Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: $GYDQFHLQIRUPDWLRQ $6&// 9.ð,QWHOOLZDWWŒORZSRZHU&02665$0 HDWXUHV • Easy memory expansion with CE, OE inputs • LVTTL/LVCMOS-compatible, three-state I/O • JEDEC registered packaging - 44-pin TSOP II package - 48-ball csp 8mm x 6mm BGA


    Original
    PDF 44-pin 48-ball AS7C181026LL) AS7C31026LL) 026LL-100TC AS7C251026LL-55TI AS7C251026LL-70TI AS7C251026LL-100TI AS7C251026LL-55BC AS7C251026LL-70BC

    Untitled

    Abstract: No abstract text available
    Text: 3UHOLPLQDU\#LQIRUPDWLRQ $6:&64359// 6169#97.ð49#,QWHOOLZDWWŒ#ORZ#SRZHU#&026#65$0 HDWXUHV • Easy memory expansion with CE, OE inputs • LVTTL/LVCMOS-compatible, three-state I/O • JEDEC registered packaging - 44-pin TSOP II package - 48-ball csp 8mm x 6mm BGA


    Original
    PDF 44-pin 48-ball AS7C181026LL) AS7C251026LL) AS7C31026LL-100TI AS7C31026LL-55BC AS7C31026LL-70BC AS7C31026LL-100BC AS7C31026LL-55BI AS7C31026LL-70BI

    CQM1-ID212

    Abstract: No abstract text available
    Text: 3UHOLPLQDU\LQIRUPDWLRQ $6&// 9.ð,QWHOOLZDWWŒORZSRZHU&02665$0 HDWXUHV • JEDEC registered packaging - 44-pin TSOP II package - 48-ball csp 8mm x 6mm BGA • Center power and ground pins for low noise • ESD protection ≥ 2000 volts


    Original
    PDF 44-pin 48-ball AS7C251026LL) AS7C31026LL) AS7C181026LL-55BC AS7C181026LL-70BC AS7C181026LL-100BC AS7C181026LL-55BI AS7C181026LL-70BI AS7C181026LL-100BI CQM1-ID212

    Untitled

    Abstract: No abstract text available
    Text: Advance information •■ AS7C181026LL II 1.8V 64Kx 16 Intelliwatt'-' low power C M O S SRAM Features • • • • • O ptim ized design for battery operated portable systems Intelliw att active pow er reduction circuitry O rganization: 6 5 ,5 3 6 w ords X 16 bits


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    PDF AS7C181026LL S7C181026LL-35TI 181026LL-55TI S7C181026LL-70TI S7C181026LL-100TI S7C181026LL-35BC S7C181026LL-55BC AS7C181026LL-70BC AS7C181026LL-100BC S7C181026LL-35BI

    64KX16

    Abstract: No abstract text available
    Text: High p e rfo rm a n c e 6 4 K x 16 CMOS SRAM » II AS7C181026LL A Features • O ptim ized design for battery operated portable system s • Intelliw att active p o w er reduction circuitry • O rganization: 65 ,5 3 6 w ords X 16 bits • 1.65V to 1.95V operating range JESD 8-7


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    PDF 64KX16 AS7C181026LL 44-pin AS7C181026LL-35TI AS7C181026LL-55TI AS7C181026LL-70TI AS7C181026LL-100TI AS7C181026LL-3SBC AS7C181026LL-55BC AS7C181026LL-70BC

    Untitled

    Abstract: No abstract text available
    Text: Preliminary information •■ AS7C181026LL A 1.8V 6 4K x 16 lntelliwatt,v low power CM O S SRAM Features • • • • • • • • • Optimized design for battery operated portable systems Intelliwatt active power reduction circuitry Organization: 65,536 words x 16 bits


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    PDF AS7C181026LL 44-pin 48-ball AS7C181026LL-55TI AS7C181026LL-70TI AS7C181026LL-100TI AS7C181026LL-55BC AS7C181026LL-70BC AS7C181026LL-100BC AS7C181026LL-55BI

    Untitled

    Abstract: No abstract text available
    Text: H ig h p e r f o r m a n c e 6 4 K X 16 C M O S SR AM A S7C 31026L L 6 4 K X 16 In telliw att low power CMOS SRAM Advance information • • • • • Optimized design for battery operated portable systems Intelliwatt™ active pow er reduction circuitry


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    PDF 31026L S7C31026LL-55BC 31026LL-70BC S7C31026LL-100B S7C31026LL-35BI AS7C31026LX-55BI S7C31026LL-70B -100BI 0019-A 00D1435

    Untitled

    Abstract: No abstract text available
    Text: Advance information A S 7C 31026LL 3 .3 V 6 4 K x 1 6 Inte I¡watt'” low power C M O S SRAM Features •O p tm ized design fo r battery operated portable s/stan s •E a s/ m en o iy ejqpansbn w ifh CE, O E inputs • ivtelliw ait?“ active pow e r reduction circuitry


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    PDF 31026LL

    Untitled

    Abstract: No abstract text available
    Text: Advance information •■ AS7C31026LL II 3.3V 6 4K x 16 Intelliwatt'1' low power CM O S SRAM Features • Optimized design for battery operated portable systems • Intelliwatt active power reduction circuitry • Organization: 65,536 words X 16 bits • 2.7 V to 3.6V operating range


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    PDF AS7C31026LL 44-pin AS7C31026LL-35TC AS7C31026LL-35TI AS7C31026LL-35BC AS7C31026LL-35BI AS7C31026LL-55TC AS7C31026LL-55TI AS7C31026LL-55BC AS7C31026LL-55BI

    1I200

    Abstract: 64KX16 C1998
    Text: H ig h p e r f o r m a n c e 64K X 16 C M O S SR A M A S 7 C 3 1026L L A Features • Optimized design for battery operated portable systems • Intelliwatt active power reduction circuitry • Organization: 65,536 words x 16 bits • 2.7V to 3.6V operating range


    OCR Scan
    PDF AS7C31026LL 64KX16 44-pin AS7C31026LL-100TC AS7C31026LL-35TI AS7C31026LL-55TI AS7C31026LL-70TI AS7C31026LL-100TI 1026LL-35BC 1I200 C1998

    Untitled

    Abstract: No abstract text available
    Text: Preliminary information •■ AS7C31026LL A 3.3V 6 4 K x 16 Intelliwatt low power C M O S SRAM Features • • • • • O ptim ized design for battery o perated portable systems Intelliw att™ active p o w e r re d u c tio n circuitry O rganization: 6 5 ,5 3 6 w o rd s x 16 bits


    OCR Scan
    PDF AS7C31026LL 31026LL AS7C3102 C31026LL-70TC AS7C31026LL-100TC AS7C31026LL-55TI AS7C31026LL-70TI C31026LL-100TI C31026LL-55BC

    Untitled

    Abstract: No abstract text available
    Text: H i gh p e r f o r m a n c e » 6 4 K x 16 II AS 7 C18 10 26 LL CMOS SRAM A 6 4 K x l 6 In telliw att1'• low power CMOS SRAM Advance information • O p tim iz e d d e s ig n fo r b a tte r y o p e r a te d p o r ta b le s y ste m s • E a sy m e m o r y e x p a n s i o n w i t h CE, O E in p u t s


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    PDF t26LL-70BC S7C181026LL-100BC 181026IX -35TI AS7C181026LL-35BI AS7C181026LL-55BI AS7C18 1026LL-100BI 1026LL

    WZ-250

    Abstract: TL2002
    Text: F ra n ce information Features • • • • • O ptim ized design for battery o perated portable systems Intelliw att active p o w er red u ctio n circuitry O rganization: 6 5 ,5 3 6 w o rd s x ] 6 bits 1.65V to 1.95V operating range JESD 8 -7 H igh speed


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    PDF 48-ball AS7C181026LL-55T1 181026IX-55BC 181026IX-55BI AS7C181026LL-70TC AS7C1810261L-70T[ 181026IL-70BC 181026IL-70BI AS7C18 026LL-1OOTC WZ-250 TL2002

    SRAM 64KX8 5V

    Abstract: No abstract text available
    Text: A Product Guide "641 Ali densities is bits TÎÎT 256K- —I.8V /2.S V /3.3V — 64KX16 ! -3.3V 32ÏX 8 asynchronous asynchronous in x: 8Kx8 I 32KX8 64KX8 32KX16 128KX8 I j!28gxl6| 64KX16 64KX8 128KX8 64KXJ6 32XX16 -3.3V 32KX32 synchronous Memories- -ED O


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    PDF 256K- 128KX8 64KX16 64KX8 32KX16 32KX8 128KX8 28gxl6| SRAM 64KX8 5V

    11-2Q019-A

    Abstract: No abstract text available
    Text: Advance information Features • Optimized design for battery operated portable systems • Intelliwatt active power reduction circuitry • Organization: 65,536 words x 16 bits • 2.7V to 3.6V operating range • High speed - 3 5 /5 5 /7 0 /1 0 0 ns address access time


    OCR Scan
    PDF 44-pin 48-ball AS7C31026H AS7C31026U AS7C31026LL-55BI AS7C31026LL-70TC AS7C31026LL-100TC AS7C31026LL-70TI AS7C31026LL-100TI AS7C31026LL-70BC 11-2Q019-A

    Untitled

    Abstract: No abstract text available
    Text: Advance information •■ AS7C251026LL A 2.5V 6 4K x 16 lntelliwatt,v low power CM O S SRAM Features • • • • • Optimized design for battery operated portable systems Intelliwatt active power reduction circuitry Organization: 65,536 words x 16 bits


    OCR Scan
    PDF AS7C251026LL AS7C251026LL-55TC AS7C251026LL-70TC AS7C251026LL-100TC AS7C251026LL-55T1 AS7C251026LL-70TI AS7C251026LL-100TI AS7C251026LL-55BC AS7C251026LL-70BC AS7C251026LL-100BC