AS 205 TRANSISTOR Search Results

AS 205 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

AS 205 TRANSISTOR Price and Stock

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onsemi BC847BLT3G Bipolar (BJT) Transistor NPN 45 V 100 mA 100MHz 300 mW Surface Mount SOT-23-3 (TO-236)
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Onlinecomponents.com	BC847BLT3G		60,000			1 - 10 - 100 - 1000 - 10000 $0.0134	Buy Now
Microchip Technology Inc VN0109N3-G MOSFET - N-Channel - 90V Vdss - 350mA - 3Ohm @ 1A, 10V Rds On (Max) @ Id, Vgs - ±20V Vgs - 1W Power Dissipation - TO-92-3 - RoHS.
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Onlinecomponents.com	VN0109N3-G		205			1 - 10 - 100 $0.706 1000 $0.608 10000 $0.596	Buy Now
Microchip Technology Inc JANTXV2N2906A
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Onlinecomponents.com	JANTXV2N2906A					1 - 10 - 100 $13.07 1000 $6.32 10000 $6.32	Buy Now
onsemi FDP030N06B-F102 Single N-Channel 60 V 3.1 mOhm 99 nC 205 W Flange Mount Mosfet - TO-220-3
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Onlinecomponents.com	FDP030N06B-F102					1 - 10 - 100 - 1000 $1.1 10000 $1.1	Buy Now

AS 205 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
HC4538 Abstract: HD74HC4538 BA rx transistor Hitachi DSA00223 Text: HD74HC4538 Dual Precision Retriggerable/Resettable Monostable Multivibrators ADE-205-543 Z 1st. Edition Sep. 2000 Description Each multivibrator features both a negative, A, and a positive, B, transition triggered input, either of which can be used as an inhibit input. Also included is a clear input that when taken low resets the one short. The	Original	HD74HC4538 ADE-205-543 HD74HC4538 HC4538 BA rx transistor Hitachi DSA00223	PDF
Untitled Abstract: No abstract text available Text: HA R R I S S E M I C O N D SE C T O R HARRIS SÔE D • 4 3 G 2271 D Ü 4 5 bflO 205 H H A S 2N7273D, 2N7273H 2N7273H S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRS130 D, R, H Radiation Hardened N-Channel Power MOSFETs January 1993	OCR Scan	2N7273D, 2N7273H FRS130 43D2271 004SbÃ 2N7273R, 2N7273H 631UIS	PDF
transistor bc 237c Abstract: transistor 206 BC 205 TRANSISTOR NPN bc 206 transistor bu205 BU206 AS 205 transistor bf 204 115 TRANSISTOR BC 206 Text: TELEFUNKEN ELECTRONIC 17E D • iH E O O 'lb GOGTMM? IAL66 T BU 204 • BU 205 • bU ¿u6 TnmiPttSMKOlN] electronic Creitiv* ”ftehnOtoaiM r-2 3 ~ 0 7 Silicon NPN Power Transistors Applications; Horizontal deflection circuits in black and white TV-receivers	OCR Scan	IAL66 15A3DIN transistor bc 237c transistor 206 BC 205 TRANSISTOR NPN bc 206 transistor bu205 BU206 AS 205 transistor bf 204 115 TRANSISTOR BC 206	PDF
S14K275 Abstract: S20K680 S20K300 S10K250 S14K300 S14K385 S14K550 S20K550 710 svp 180 16 S20k175 Text: 1954-2012:QuarkCatalogTempNew 9/11/12 8:50 AM Page 1954 OPTOELECTRONICS AUTOMATION & CONTROL POWER ENCLOSURES INTERCONNECT TEST & MEASUREMENT 25 Varistors and Surge Voltage Protectors Metal Oxide Varistors Typical Protection Applications: ᭤ Protection of Semiconductors Diodes, Transistors, Thyristors, ICs, Etc.	Original		PDF
SIEMENS 1035 Abstract: No abstract text available Text: SIEMENS SIPMOS Power MOS Transistor VDS lD BUZ 205 = 400 V = 6.0 A ^D SIonl = 1 - 0 Q • N channel • FREDFET • Enhancement mode • Avalanche-proof • Package: TO -220A B ’ Type Ordering code BUZ 205 C67078-A1401-A2 Maximum Ratings Parameter Drain-source voltage	OCR Scan	-220A C67078-A1401-A2 SIL00032 SIL00753 SIEMENS 1035	PDF
Untitled Abstract: No abstract text available Text: SIEMENS SIPMOS Power Transistor • • • N channel Enhancem ent mode FREDFET Type ^DS BUZ 205 400 V ^DS on 6.0 A 1.0 ß Maxim um Ratings Parameter Continuous drain current, Tc = 35 "C Pulsed drain current, Tc = 25 ”C Drain-source voltage Drain-gate voltage, R GS = 20 kQ	OCR Scan	C67078-A14 01-A2 S1L02486	PDF
7N60B equivalent Abstract: 60N60B2-7Y 7N60C-2X 7N60B-2X 10n60b ixgd 28N12 60N60C2-7Y 20N120 16N60C2 Text: Chip-Shortform2004.pmd Insulated Gate Bipolar Transistors G-Series Type VCES VCE sat @ IC Chip type Chip size dimensions 6 TJM = 150°C V V A mm mils Source bond wire Equivalent device recommended data sheet 26.10.2004, 12:44 High Gain High Gain High Gain	Original	7N60B-2X 7N60C-2X 16N60B2-3X 16N60C2-3X 30N60B2-4X 30N60C2-4X 40N60B2-5Y 40N60C2-5Y 60N60B2-7Y 60N60C2-7Y 7N60B equivalent 10n60b ixgd 28N12 20N120 16N60C2	PDF
Dual transistor TD-100 Abstract: No abstract text available Text: Philips Semiconductors Product specification Dual N-channel enhancement mode MOS transistor FEATURES PHN205 PINNING - SOT96-1 S08 • High-speed switching • No secondary breakdown • Very low on-state resistance. PIN SYMBOL 1 Si 2 9i gate 1 3 s2 source 2	OCR Scan	OT96-1 PHN205 Dual transistor TD-100	PDF
Untitled Abstract: No abstract text available Text: MbñbEZb 0 0 0 1 7 3 ? 323 II X Y Insulated Gate Bipolar Transistors IGBT "S" series with im proved SC SO A capability Type i Vcts • c ■ c Tc = 9 0 C Tc = 25'C ► New max. typ. C typ. pF 1800 2800 4500 pF 45 50 90 HS US KW W 0.4 0.4 0.4 10 0.83 0.62	OCR Scan	20N60 30N60 40N60 25N100 45N100 45N120 40N60AU1 35N100U1 55N100U1Â 52N60AU1Â	PDF
AZ10EL89 Abstract: AZ10EL89D AZ10EL89DR1 AZ10EL89DR2 MC10EL89 Text: ARIZONA MICROTEK, INC. AZ10EL89 ECL/PECL Coaxial Cable Driver FEATURES • • • • • • 375ps Propagation Delay 1.6V Output Swing Internal Input Pulldown Resistors Operating Range of 4.2V to 5.7V Direct Replacement for ON Semiconductor MC10EL89 Transistor Count = 29 devices	Original	AZ10EL89 375ps MC10EL89 AZ10EL89D AZ10EL89DR1 AZ10EL89DR2 AZM10EL89 AZ10EL89 AZ10EL89D AZ10EL89DR1 AZ10EL89DR2 MC10EL89	PDF
30n60 Abstract: 40N60AU1 40N60 igbt 30N60 30N60A 50N100 30n60* 227 30N60U1 IXSN40N60AU1 50N60U1 Text: MbflbZZb 00Q1737 323 ¡IX Y insulated Gate Bipolar Transistors IGBT "S" series with im proved SC SO A capability Type 'i > New IXSH IXSH IXSH IXSH IXSH IXSH IXSH ► IXSH IXSH IXSH IXSH IXSH > IXSH > IXSH ÍXSM ÍXSM !XSM 20N60 30N60 40N60 25N100 45N100	OCR Scan	00Q1737 20N60 O-247 30N60 40N60 25N100 45N100 45N120 20N60A 24N60A 30n60 40N60AU1 40N60 igbt 30N60 30N60A 50N100 30n60* 227 30N60U1 IXSN40N60AU1 50N60U1	PDF
TPV-3100 Abstract: TPV3100 TPV595 BLX98 BFQ68 Applications UTV020 CD2811 UTV040 CD2812 TVV100 Text: ADVANCED SEMICONDUCTOR, IN C TRANSISTORS FOR BROADCAST APPLICATIONS Vour Single Source for Transistors 7525 ETHEL AVE. * NORTH HOLLYWOOD, CAUFORNIA 91605 • U.S.A. TEL: 8 18 982-1200 ♦ (800) 423-2354 * FAX: (818) 765-3018 * e-mail: asiusa@asi.ccmail.compuserve.com	OCR Scan	TVV014A TPV-3100 TPV3100 TPV595 BLX98 BFQ68 Applications UTV020 CD2811 UTV040 CD2812 TVV100	PDF
BFR65 Abstract: BFQ34 multi-emitter transistor n 431 transistor Transistor PJ 431 Text: N AMER PHILIPS/DISCRETE 2SE » • btS3T31 GG1ÔQQS 1 BFQ34 is recommended for new design y \ I BFR65 T - S 3 - 0 S - N-P-N H.F. WIDEBAND TRANSISTOR N-P-N multi-emitter silicon transistor in a capstan envelope. The transistor has extremely good intermoduiation properties and high power gain.	OCR Scan	BFQ34 btS3T31 BFR65 BFR65 multi-emitter transistor n 431 transistor Transistor PJ 431	PDF
Untitled Abstract: No abstract text available Text: DIONICS INC. 65 RU SH M O RE ST. W ES TBU RY, N Y 11S90 DTN203 - DTP203 5 1 6 9 9 7 7 4 7 4 DTN204 - DTP204 HIGH VOLTAGE SILICON NPN AND PNP TRANSISTORS DTN205 - DTP205 DTN206 - DTP206 A P P LIC A TIO N S : PLA SM A A N D GAS D IS C H A R G E . D IS P L A Y D R IV E R S • S W IT C H IN G R E G U L A T O R S	OCR Scan	11S90 DTN203 DTP203 DTN204 DTP204 DTN205 DTP205 DTN206 DTP206 300/iS	PDF

2N6764 JANTX Abstract: 30AQ 2N6764 2N6766 2N6768 2N6770 JANTX2N6764 JANTX2N6766 JANTX2N6768 JANTX2N6770 Text: 2N6764, JANTX2N6764, JANTXV2N6764 2N6766, JANTX2N6766, JANTXV2N6766 2N6768, JANTX2N6768, JANTXV2N6768 2N6770, JANTX2N6770, JANTXV2N6770 JANTX, JANTXV POWER MOSFET IN TO-204 PACKAGE, QUALIFIED TO MIL-PRF-19500/543 100V Thru 500V, Up to 38A, N-Channel, Enhancement Mode MOSFET Power Transistor	Original	2N6764, JANTX2N6764, JANTXV2N6764 2N6766, JANTX2N6766, JANTXV2N6766 2N6768, JANTX2N6768, JANTXV2N6768 2N6770, 2N6764 JANTX 30AQ 2N6764 2N6766 2N6768 2N6770 JANTX2N6764 JANTX2N6766 JANTX2N6768 JANTX2N6770	PDF
transformerless variable frequency drive Abstract: SM8141B LDR resistor ldr datasheet Circuit diagram of LDR LDR 03 LDR FUNCTION LDR -03 CF8141A CF8141B Text: SM8141 EL Driver OVERVIEW The SM8141 is a transformer-less electroluminescent EL sheet lamp driver, capable of driving sheets up to 50cm2 in size. It employs built-in high withstand voltage output MOS transistors and requires few external components, making it ideal for compact driver units in portable equipment.	Original	SM8141 SM8141 50cm2 SM8141A) SM8141B) 200Vp-p 250Hz NC9710FE transformerless variable frequency drive SM8141B LDR resistor ldr datasheet Circuit diagram of LDR LDR 03 LDR FUNCTION LDR -03 CF8141A CF8141B	PDF
transformerless variable frequency drive Abstract: LDR DIMENSIONS LDR resistor ldr block diagram LDR voltage range ldr 05 CF8141A CF8141B SM8141A SM8141B Text: SM8141 EL Sheet Driver NIPPON PRECISION CIRCUITS INC. OVERVIEW PINOUT The SM8141 is a transformer-less electroluminescent EL sheet lamp driver, capable of driving sheets up to 50cm2 in size. It employs built-in high withstand voltage output MOS transistors and requires	Original	SM8141 SM8141 50cm2 CF8141A CF8141B SM8141BVroducts NC9710DE transformerless variable frequency drive LDR DIMENSIONS LDR resistor ldr block diagram LDR voltage range ldr 05 CF8141A CF8141B SM8141A SM8141B	PDF
2SB1398 Abstract: No abstract text available Text: Transistor 2SB1398 Silicon PNP epitaxial planer type For low-frequency output amplification Unit: mm 1.05 2.5±0.1 ±0.05 • Features 0.65 max. 14.5±0.5 ● Low collector to emitter saturation voltage VCE sat . Large collector current IC. Allowing supply with the radial taping.	Original	2SB1398 2SB1398	PDF
2SB1398 Abstract: No abstract text available Text: Transistor 2SB1398 Silicon PNP epitaxial planer type For low-frequency output amplification Unit: mm 6.9±0.1 4.0 2.5±0.1 0.8 • Features ● Low collector to emitter saturation voltage VCE(sat). Large collector current IC. Allowing supply with the radial taping.	Original	2SB1398 2SB1398	PDF
2SB1398 Abstract: No abstract text available Text: Transistors 2SB1398 Silicon PNP epitaxial planar type For low-frequency power amplification Unit: mm 6.9±0.1 4.0 0.7 2.5±0.1 0.8 • Low collector-emitter saturation voltage VCE(sat) • Large collector current IC • Allowing supply with the radial taping	Original	2SB1398 2SB1398	PDF
2SB1398 Abstract: No abstract text available Text: Transistor 2SB1398 Silicon PNP epitaxial planer type For low-frequency output amplification Unit: mm 1.05 2.5±0.1 ±0.05 • Features 0.65 max. 14.5±0.5 ● Low collector to emitter saturation voltage VCE sat . Large collector current IC. Allowing supply with the radial taping.	Original	2SB1398 2SB1398	PDF
IC 7474 Abstract: 7474 ic 7474 ic specifications complementary npn-pnp power transistors 7474 ic chip DTN206 of 7474 ic Data Display 7474 complementary npn-pnp DTP206 Text: DIONICS INC. 65 RU SH M O RE ST., W ES TB U R Y . N Y. 11590 5 1 6 9 9 7 7 4 7 4 HIGH VOLTAGE SILICON NPN AND PNP TRANSISTORS DTN203 DTP 203 DTN204 DTP204 DTN205 - DTP205 DTN206 - DTP206 PLASM A AND G A S D ISC H A R G E D IS P L A Y D R IV E R S • SW IT C H IN G R E G U L A T O R S	OCR Scan	t1590 DTN203 DTN204 DTP204 DTN205 DTP205 DTN206 DTP206 O-106 100MHZ IC 7474 7474 ic 7474 ic specifications complementary npn-pnp power transistors 7474 ic chip of 7474 ic Data Display 7474 complementary npn-pnp DTP206	PDF
EPC Gan transistor Abstract: EPC1013 Text: DATASHEET EPC1013 EPC1013 – Enhancement Mode Power Transistor VDSS , 150 V RDS ON , 100 mW ID , 3 A EFFICIENT POWER CONVERSION Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure	Original	EPC1013 EPC Gan transistor EPC1013	PDF
EPC1012 Abstract: EPC Gan transistor Text: DATASHEET EPC1012 EPC1012 – Enhancement Mode Power Transistor VDSS , 200 V RDS ON , 100 mW ID , 3 A EFFICIENT POWER CONVERSION Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure	Original	EPC1012 EPC1012 EPC Gan transistor	PDF

AS 205 TRANSISTOR Search Results

AS 205 TRANSISTOR Result Highlights (5)

AS 205 TRANSISTOR Price and Stock

onsemi BC847BLT3G

Microchip Technology Inc VN0109N3-G

Microchip Technology Inc JANTXV2N2906A

onsemi FDP030N06B-F102

AS 205 TRANSISTOR Datasheets Context Search

HC4538

Untitled

transistor bc 237c

S14K275

SIEMENS 1035

Untitled

7N60B equivalent

Dual transistor TD-100

Untitled

AZ10EL89

30n60

TPV-3100

BFR65

Untitled

2N6764 JANTX

transformerless variable frequency drive

transformerless variable frequency drive

2SB1398

2SB1398

2SB1398

2SB1398

IC 7474

EPC Gan transistor

EPC1012