C8450
Abstract: MRF5S4140H
Text: Document Number: MRF5S4140H Rev. 1, 1/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4140HR3 MRF5S4140HSR3 Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these
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MRF5S4140H
28-volt
MRF5S4140HR3
MRF5S4140HSR3
MRF5S4140H
C8450
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J0743
Abstract: MRF5S4140H j0810 100B121JP500X A114 A115 AN1955 C101 JESD22 MRF5S4140HR3
Text: Document Number: MRF5S4140H Rev. 2, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4140HR3 MRF5S4140HSR3 Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these
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MRF5S4140H
MRF5S4140HR3
MRF5S4140HSR3
28-volt
MRF5S4140HR3
J0743
MRF5S4140H
j0810
100B121JP500X
A114
A115
AN1955
C101
JESD22
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MRF5S4140H
Abstract: No abstract text available
Text: Document Number: MRF5S4140H Rev. 0, 1/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4140HR3 MRF5S4140HSR3 Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these
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MRF5S4140H
MRF5S4140HR3
MRF5S4140HSR3
28-volt
MRF5S4140HR3
MRF5S4140H
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MRF5S4140H
Abstract: No abstract text available
Text: Document Number: MRF5S4140H Rev. 2, 5/2006 Freescale Semiconductor Technical Data N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4140HR3 MRF5S4140HSR3 Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these
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MRF5S4140H
MRF5S4140HR3
MRF5S4140HSR3
28-volt
MRF5S4140HR3
MRF5S4140H
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22 pf capacitor datasheet
Abstract: 100B121JP500X A114 A115 AN1955 C101 JESD22 MRF5S4140HR3 MRF5S4140HSR3 J0743
Text: RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4140HR3 MRF5S4140HSR3 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these
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MRF5S4140HR3
MRF5S4140HSR3
28-volt
MRF5S4140HR3
MRF5S4140H
22 pf capacitor datasheet
100B121JP500X
A114
A115
AN1955
C101
JESD22
MRF5S4140HSR3
J0743
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MRF6S21100H
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF6S21100H Rev. 7, 1/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21100HR3 MRF6S21100HSR3 Designed for W - CDMA base station applications with frequencies from 2110
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MRF6S21100H
MRF6S21100HR3
MRF6S21100HSR3
MRF6S21100HR3
MRF6S21100H
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atc100b102jt500xt
Abstract: CDR33BX104AKWY ATC100B5R1JT500XT CRCW08051000FKTA ATC100B150JT500XT MRF6S21100H GX-0300-55 A114 A115 AN1955
Text: Freescale Semiconductor Technical Data Document Number: MRF6S21100H Rev. 7, 1/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21100HR3 MRF6S21100HSR3 Designed for W - CDMA base station applications with frequencies from 2110
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MRF6S21100H
MRF6S21100HR3
MRF6S21100HSR3
MRF6S21100HR3
atc100b102jt500xt
CDR33BX104AKWY
ATC100B5R1JT500XT
CRCW08051000FKTA
ATC100B150JT500XT
MRF6S21100H
GX-0300-55
A114
A115
AN1955
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Rev. 7, 12/2004 RF Power Field Effect Transistors MRF19060R3 MRF19060SR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for CDMA, TDMA, GSM and multicarrier amplifier
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MRF19060R3
MRF19060SR3
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Rev. 7, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21060R3 MRF21060SR3 Designed for PCN and PCS base station applications with frequencies from 2100 to 2200 MHz. Suitable for W - CDMA, CDMA, TDMA, GSM and
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MRF21060R3
MRF21060SR3
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Nippon capacitors
Abstract: Nippon chemi
Text: Freescale Semiconductor Technical Data Document Number: MRF6S9125N Rev. 3, 3/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9125NR1 MRF6S9125NBR1 Designed for broadband commercial and industrial applications with
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MRF6S9125N
MRF6S9125NR1
MRF6S9125NBR1
MRF6S9125N
Nippon capacitors
Nippon chemi
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A113
Abstract: A114 A115 AN1955 C101 JESD22 MRF6S9125N MRF6S9125NBR1 MRF6S9125NR1 515D107M050BB6A
Text: Freescale Semiconductor Technical Data Document Number: MRF6S9125N Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9125NR1 MRF6S9125NBR1 Designed for broadband commercial and industrial applications with
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MRF6S9125N
MRF6S9125NR1
MRF6S9125NBR1
MRF6S9125NR1
A113
A114
A115
AN1955
C101
JESD22
MRF6S9125N
MRF6S9125NBR1
515D107M050BB6A
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MCR50V107M8X11
Abstract: 81c79 A114 A115 AN1955 C101 JESD22 MRF7S19080HR3 MRF7S19080HSR3 CRCW120610R0FKTA
Text: Freescale Semiconductor Technical Data Document Number: MRF7S19080H Rev. 0, 1/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19080HR3 MRF7S19080HSR3 Designed for CDMA base station applications with frequencies from 1930 to
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MRF7S19080H
MRF7S19080HR3
MRF7S19080HSR3
MRF7S19080HR3
MCR50V107M8X11
81c79
A114
A115
AN1955
C101
JESD22
MRF7S19080HSR3
CRCW120610R0FKTA
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Rev. 9, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9045LR1 MRF9045LSR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these
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MRF9045LR1
MRF9045LSR1
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices
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MRF9045R1
MRF9045LSR1
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Rev. 1, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
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MRF5S19090HR3
MRF5S19090HSR3
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Rev. 10, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9085LR3 MRF9085LSR3 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance
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MRF9085LR3
MRF9085LSR3
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motorola 5118
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Rev. 2, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HR3 MRF5S21100HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
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84RF5S21100HR3
MRF5S21100HSR3
MRF5S21100HR3
motorola 5118
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MRF9135LSR3
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors MRF9135L MRF9135LR3 MRF9135LSR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance
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MRF9135L
MRF9135LR3
MRF9135LSR3
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93F2975
Abstract: marking 865 amplifier 100B120JP 865 marking amplifier
Text: Freescale Semiconductor Technical Data Rev. 6, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance
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MRF9135LR3
MRF9135LSR3
93F2975
marking 865 amplifier
100B120JP
865 marking amplifier
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Rev. 3, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21100HR3 MRF6S21100HSR3 Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
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MRF6S21100HR3
MRF6S21100HSR3
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MRF9085
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9085 MRF9085R3 MRF9085SR3 MRF9085LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with
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MRF9085
MRF9085R3
MRF9085SR3
MRF9085LSR3
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TH 2190 Transistor
Abstract: TH 2190 mosfet z24 mosfet
Text: Freescale Semiconductor Technical Data Rev. 2, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P21240R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
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MRF5P21240R6
TH 2190 Transistor
TH 2190 mosfet
z24 mosfet
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF284/D SEMICONDUCTOR TECHNICAL DATA MRF284 MRF284SR1 The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from
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MRF284/D
MRF284
MRF284SR1
DEVICEMRF284/D
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Rev. 1, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S19100HR3 MRF6S19100HSR3 Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
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MRF6S19100HR3
MRF6S19100HSR3
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