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    Untitled

    Abstract: No abstract text available
    Text: APTM120H80FT3G VDSS = 1200V RDSon = 800mΩ typ @ Tj = 25°C ID = 14A @ Tc = 25°C Full bridge MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control 28 27 26 25 23 22 Features


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    PDF APTM120H80FT3G

    APT0406

    Abstract: APT0502 APTM120H80FT3G power Diode 800V 12A
    Text: APTM120H80FT3G VDSS = 1200V RDSon = 800mΩ typ @ Tj = 25°C ID = 14A @ Tc = 25°C Full bridge MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control 28 27 26 25 23 22 Features


    Original
    PDF APTM120H80FT3G APT0406 APT0502 APTM120H80FT3G power Diode 800V 12A

    SP6-P

    Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
    Text: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original
    PDF 10F-A, SP6-P N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter