APT64GA90B
Abstract: MIC4452 DIODE 76A
Text: APT64GA90B APT64GA90S 900V High Speed PT IGBT TO APT64GA90S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff D3PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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PDF
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APT64GA90B
APT64GA90S
APT64GA90B
MIC4452
DIODE 76A
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Untitled
Abstract: No abstract text available
Text: APT64GA90B APT64GA90S 900V High Speed PT IGBT TO APT64GA90S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -24 7 through leading technology silicon design and lifetime control processes. A reduced Eoff D 3 PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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Original
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PDF
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APT64GA90B
APT64GA90S
APT64GA90S
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APT64GA90B
Abstract: MIC4452 DIODE 76A
Text: APT64GA90B APT64GA90S 900V High Speed PT IGBT TO APT64GA90S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff D3PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
|
Original
|
PDF
|
APT64GA90B
APT64GA90S
APT64GA90B
MIC4452
DIODE 76A
|
Untitled
Abstract: No abstract text available
Text: APT64GA90B APT64GA90S 900V High Speed PT IGBT TO APT64GA90S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -24 7 through leading technology silicon design and lifetime control processes. A reduced Eoff D 3 PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
|
Original
|
PDF
|
APT64GA90B
APT64GA90S
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