Untitled
Abstract: No abstract text available
Text: APT6040BVR APT6040SVR 600V 16A 0.400Ω Ω BVR POWER MOS V D3PAK TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT6040BVR
APT6040SVR
O-247
O-247
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Untitled
Abstract: No abstract text available
Text: APT6040BVR APT6040SVR 600V 15A POWER MOS V 0.45Ω BVR TO -2 47 D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS
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APT6040BVR
APT6040SVR
O-247
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Untitled
Abstract: No abstract text available
Text: • R ADVANCED W .\A p o w e r Te c h n o lo g y “ APT6040SVR 600v i6a 0.400Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT6040SVR
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APT6040SVR
Abstract: J 122
Text: •r rM APT6040SVR ADVANCED R o w er T e c h n o lo g y 600V 16A 0.400Q POWER M OSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™
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APT6040SVR
MIL-STD-750
J 122
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Untitled
Abstract: No abstract text available
Text: APT6040SVR A dvanced P o w er T e c h n o lo g y 600v 16A 0.4000 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™
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APT6040SVR
10OA/ps)
MIL-STD-750
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Untitled
Abstract: No abstract text available
Text: A dvanced P o w er Te c h n o lo g y APT6040SVR 600V 16A 0.400U ' POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MO SFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance, Power MOS V™
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APT6040SVR
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nt 6600 G
Abstract: APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr
Text: MOSFET Selector Guide ADVANCED POW ER Te c h n o l o g y APT » V,>ss ^DS ON ID(cont) C JP F ) Part Number Volts Ohms Amps Watts Typ APT1201R6BVR 1200 1.600 8 280 3050 APT1201R5BVR 1.500 10 370 3700 APT1001RBVR 11 280 3050 1000 1.000 APT10086BVR 0.860 13 370 3700
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APT1201R6BVR
APT1201R5BVR
APT1001RBVR
APT10086BVR
APT8075BVR
APT8065BVR
APT8056BVR
APT6040BVR
APT6035BVR
APT6030BVR
nt 6600 G
APT60M75JVR
APT30M40JVR
APT20M45B
APT50M50JVR
apt12080jvr
130-131
apt5014lvr
APT5020BVFR
apt40m70jvr
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