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    APT6029BLL Price and Stock

    Microchip Technology Inc APT6029BLLG

    MOSFET N-CH 600V 21A TO247
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    DigiKey APT6029BLLG Tube 63 1
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    Avnet Americas APT6029BLLG Tube 26 Weeks 50
    • 1 $13.07
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    Mouser Electronics APT6029BLLG 67
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    Verical APT6029BLLG 300 5
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    Microchip Technology Inc APT6029BLLG
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    Onlinecomponents.com APT6029BLLG 300
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    TME APT6029BLLG 1
    • 1 $18.88
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    NAC APT6029BLLG Tube 29
    • 1 $12.47
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    Master Electronics APT6029BLLG 300
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    APT6029BLL Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    APT6029BLL Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT6029BLL Advanced Power Technology POWER MOS 7 600V 21A 0.290 Ohm Original PDF
    APT6029BLL Microsemi Power MOS 7 Low Loss MOSFET Original PDF
    APT6029BLL Unknown Power MOS 7, 600V 21A, MOS-FET N-Channel enhanced Original PDF
    APT6029BLLG Advanced Power Technology FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 21A TO-247 Original PDF

    APT6029BLL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: APT6029BLL APT6029SLL 600V 21A 0.290Ω POWER MOS 7 R MOSFET BLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT6029BLL APT6029SLL O-247 O-247

    Untitled

    Abstract: No abstract text available
    Text: APT6029BLL APT6029SLL 600V 21A 0.290Ω POWER MOS 7 R MOSFET BLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT6029BLL APT6029SLL O-247 O-247

    65100Q

    Abstract: No abstract text available
    Text: APT6029BLL APT6029SLL 600V 21A 0.290W POWER MOS 7TM BLL D3PAK Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON


    Original     		PDF APT6029BLL APT6029SLL O-247 O-247 65100Q

    APT6029BLL

    Abstract: APT6029SLL
    Text: APT6029BLL APT6029SLL 600V 21A 0.290Ω R POWER MOS 7 MOSFET BLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT6029BLL APT6029SLL O-247 O-247 APT6029BLL APT6029SLL

    APT6029BLL

    Abstract: APT6029SLL
    Text: APT6029BLL APT6029SLL 600V 21A 0.290W POWER MOS 7TM BLL D3PAK Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON


    Original     		PDF APT6029BLL APT6029SLL O-247 O-247 APT6029BLL APT6029SLL

    APT0201

    Abstract: APT0202 12 VOLT 10 AMP smps 12 VOLT 2 AMP smps circuit mosfet 300 volt 12 VOLT 100 AMP smps dodge high current IGBT based buck converter IGBT 400 amp IGBT cross
    Text: Application Note APT0302 Rev. A April 4, 2003 Latest Technology PT IGBTs vs. Power MOSFETs Jonathan Dodge, P.E. Senior Applications Engineer Advanced Power Technology 405 S.W. Columbia Street Bend, OR 97702 USA Based on a paper presented at PCIM China 2003


    Original     		PDF APT0302 APT0201 APT0202 12 VOLT 10 AMP smps 12 VOLT 2 AMP smps circuit mosfet 300 volt 12 VOLT 100 AMP smps dodge high current IGBT based buck converter IGBT 400 amp IGBT cross

    catalog mosfet Transistor smd

    Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt
    Text: 1 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance


    Original     		PDF

    sot-227 footprint

    Abstract: VRF2933 SP6-P ARF1511 DRF1200 APT35GP120JDQ2 ARF521 TO-247 smps welder inverter APTGT25DA120D1G
    Text: Power Semiconductors Power Modules & RF Power MOSFETs 2006 Power Products Group 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original     		PDF

    mj 1504 transistor equivalent

    Abstract: ARF450 FREDFETs transistors mj 1504 APT1201R2BLL APT60GF120JRD APT60M75JVR APT100S20B APT4014BVR APT1208
    Text: 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance this position as


    Original     		PDF

    APT100GF60LR

    Abstract: 1200 volt mosfet FREDFETs sot-227 footprint APT75GP120JDF3 APT609RK3VFR APT8075BVR APT5010jvr APT20M19JVR APT1001RBVR
    Text: Discrete Power Products 2003 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of


    Original     		PDF