Untitled
Abstract: No abstract text available
Text: APT6017B2LL APT6017LLL 600V 35A 0.170Ω POWER MOS 7 R MOSFET B2LL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT6017B2LL
APT6017LLL
O-264
O-264
O-247
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Untitled
Abstract: No abstract text available
Text: APT6017B2LL APT6017LLL 600V 35A 0.170Ω R POWER MOS 7 MOSFET B2LL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT6017B2LL
APT6017LLL
O-264
O-264
O-247
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APT6017B2LL
Abstract: APT6017LLL
Text: APT6017B2LL APT6017LLL 600V 35A 0.170W B2LL POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON
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APT6017B2LL
APT6017LLL
O-264
O-264
O-247
APT6017B2LL
APT6017LLL
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PDF
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Untitled
Abstract: No abstract text available
Text: APT6017B2LL APT6017LLL 600V 35A 0.170W B2LL POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON
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APT6017B2LL
APT6017LLL
O-264
O-264
O-247
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APT28GA60BD15
Abstract: APT6017LLL MIC4452
Text: APT28GA60BD15 600V High Speed PT IGBT T O24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT28GA60BD15
APT28GA60BD15
APT6017LLL
MIC4452
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APT20GT60BRDQ1
Abstract: APT20GT60BRDQ1G APT6017LLL
Text: TYPICAL PERFORMANCE CURVES APT20GT60BRDQ1 G 600V APT20GT60BRDQ1 APT20GT60BRDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® TO -2 The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast
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APT20GT60BRDQ1
APT20GT60BRDQ1
APT20GT60BRDQ1G*
150KHz
APT20GT60BRDQ1G
APT6017LLL
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APT15GT60BRDQ1
Abstract: APT15GT60BRDQ1G APT6017LLL
Text: APT15GT60BRDQ1 G 600V TYPICAL PERFORMANCE CURVES APT15GT60BRDQ1 APT15GT60BRDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® TO -2 47 The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast
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APT15GT60BRDQ1
APT15GT60BRDQ1
APT15GT60BRDQ1G*
150KHz
APT15GT60BRDQ1G
APT6017LLL
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APT15DQ60
Abstract: APT15DQ60BCT APT15DQ60BCTG APT6017LLL
Text: 600V 2x15A APT15DQ60BCT APT15DQ60BCTG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode
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2x15A
APT15DQ60BCT
APT15DQ60BCTG*
O-247
APT15DQ60
APT15DQ60BCT
APT15DQ60BCTG
APT6017LLL
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APT30GP60BDF1
Abstract: No abstract text available
Text: TYPICAL PERFORMANCE CURVES APT30GP60BDF1 APT30GP60BDF1 600V POWER MOS 7 IGBT TO-247 A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode
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APT30GP60BDF1
O-247
APT30GP60BDF1
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Untitled
Abstract: No abstract text available
Text: APT20GT60BRDQ1 G 600V TYPICAL PERFORMANCE CURVES APT20GT60BRDQ1 APT20GT60BRDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® TO -2 47 The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast
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APT20GT60BRDQ1
APT20GT60BRDQ1G*
150KHz
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7441
Abstract: IC 7441 datasheet APT65GP60JDF2
Text: TYPICAL PERFORMANCE CURVES APT65GP60JDF2 APT65GP60JDF2 600V POWER MOS 7 IGBT E E The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT65GP60JDF2
7441
IC 7441 datasheet
APT65GP60JDF2
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APT20GT60BRDQ1
Abstract: APT20GT60BRDQ1G APT6017LLL
Text: APT20GT60BRDQ1 G 600V TYPICAL PERFORMANCE CURVES APT20GT60BRDQ1 APT20GT60BRDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® TO -2 47 The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast
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APT20GT60BRDQ1
APT20GT60BRDQ1
APT20GT60BRDQ1G*
150KHz
APT20GT60BRDQ1G
APT6017LLL
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PDF
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Untitled
Abstract: No abstract text available
Text: APT65GP60JDQ2 600V TYPICAL PERFORMANCE CURVES APT65GP60JDQ2 E E POWER MOS 7 IGBT ® The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching
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APT65GP60JDQ2
E145592
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PDF
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Untitled
Abstract: No abstract text available
Text: APT28GA60BD15 APT28GA60SD15 600V High Speed PT IGBT B TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT28GA60BD15
APT28GA60SD15
APP11
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PDF
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APT40GP60B2DF2
Abstract: No abstract text available
Text: TYPICAL PERFORMANCE CURVES APT40GP60B2DF2 APT40GP60B2DF2 600V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT40GP60B2DF2
APT40GP60B2DF2
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PDF
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APT65GP60JDQ2
Abstract: No abstract text available
Text: APT65GP60JDQ2 600V TYPICAL PERFORMANCE CURVES APT65GP60JDQ2 E E POWER MOS 7 IGBT ® The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching
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APT65GP60JDQ2
E145592
APT65GP60JDQ2
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PDF
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Untitled
Abstract: No abstract text available
Text: APT50GP60JDQ2 600V TYPICAL PERFORMANCE CURVES APT50GP60JDQ2 ® C G The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.
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APT50GP60JDQ2
E145592
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PDF
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Untitled
Abstract: No abstract text available
Text: APT30GP60JDQ1 600V TYPICAL PERFORMANCE CURVES APT30GP60JDQ1 E E POWER MOS 7 IGBT ® The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching
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APT30GP60JDQ1
E145592
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PDF
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Untitled
Abstract: No abstract text available
Text: 600V 15A APT15DQ60B APT15DQ60S APT15DQ60BG* APT15DQ60SG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE TO PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply
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APT15DQ60B
APT15DQ60S
APT15DQ60BG*
APT15DQ60SG*
O-247
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Untitled
Abstract: No abstract text available
Text: 600V 15A APT15DQ60K APT15DQ60KG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode
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APT15DQ60K
APT15DQ60KG*
O-220
O-220
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PDF
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APT30GP60BDQ1G
Abstract: No abstract text available
Text: APT30GP60BDQ1 G 600V TYPICAL PERFORMANCE CURVES APT30GP60BDQ1 APT30GP60BDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® TO -2 47 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching
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APT30GP60BDQ1
APT30GP60BDQ1G*
APT30GP60BDQ1G
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PDF
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diode bridge 16A
Abstract: No abstract text available
Text: APT28GA60BD15 APT28GA60SD15 600V High Speed PT IGBT B TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT28GA60BD15
APT28GA60SD15
diode bridge 16A
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PDF
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APT30GP60JDQ1
Abstract: No abstract text available
Text: APT30GP60JDQ1 600V TYPICAL PERFORMANCE CURVES APT30GP60JDQ1 E E POWER MOS 7 IGBT ® The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching
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Original
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APT30GP60JDQ1
E145592
APT30GP60JDQ1
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PDF
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Untitled
Abstract: No abstract text available
Text: APT50GP60JDF2 600V E E POWER MOS 7 IGBT The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT50GP60JDF2
Col496)
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PDF
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