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    SF Impression Pixel

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    Microchip Technology Inc APT5025BN

    MOSFET N-CH 500V 23A TO247AD
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    APT Semiconductor APT5025BNR

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    Microchip Technology Inc APT5025BNG

    POWER MOSFET TRANSISTOR
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    Richardson RFPD APT5025BNG 1
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    APT5025BN Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    APT5025BN Advanced Power Technology N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET Original PDF
    APT5025BN Microsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 500V 23A TO247AD Original PDF
    APT5025BNR Advanced Power Technology N-Channel Enhancement Mode High Voltage Power MOSFETS Scan PDF

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    5025BN

    Abstract: apt5025 APT5025BN APT5030BN 5007 5030BN N mos 100v 100A
    Text: D TO-247 G S POWER MOS IV APT5025BN 500V 23.0A 0.25Ω APT5030BN 500V 21.0A 0.30Ω N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage


    Original     		PDF O-247 APT5025BN APT5030BN 5025BN 5030BN O-247AD 5025BN apt5025 5007 5030BN N mos 100v 100A

    scr gate driver ic

    Abstract: HEXFET Power MOSFET designer manual "MOS Controlled Thyristors" UC1710 application notes mosfet discrete totem pole drive CIRCUIT IRFP460 transistor databook HEXFET Power MOSFET Designers Manual irfp460 igbt SCR gate drive circuit datasheet irfp460 mosfet
    Text: U-137 APPLICATION NOTE PRACTICAL CONSIDERATIONS IN HIGH PERFORMANCE MOSFET, IGBT and MCT GATE DRIVE CIRCUITS BILL ANDREYCAK INTRODUCTION The switchmode power supply industry’s trend towards higher conversion frequencies is justified by the dramatic improvement in obtaining higher power densities. And as these frequencies are pushed towards


    Original     		PDF U-137 1000pF UC3724 UC3725 600kHz O-220 scr gate driver ic HEXFET Power MOSFET designer manual "MOS Controlled Thyristors" UC1710 application notes mosfet discrete totem pole drive CIRCUIT IRFP460 transistor databook HEXFET Power MOSFET Designers Manual irfp460 igbt SCR gate drive circuit datasheet irfp460 mosfet

    HEXFET Power MOSFET Designers Manual

    Abstract: "MOS Controlled Thyristors" HEXFET Power MOSFET designer manual mosfet discrete totem pole drive CIRCUIT UC1710 application notes IRFP460 transistor databook UC1770 mosfet discrete totem pole CIRCUIT scr gate driver ic uc1710
    Text: U-137 APPLICATION NOTE PRACTICAL CONSIDERATIONS IN HIGH PERFORMANCE MOSFET, IGBT and MCT GATE DRIVE CIRCUITS BILL ANDREYCAK INTRODUCTION The switchmode power supply industry’s trend towards higher conversion frequencies is justified by the dramatic improvement in obtaining higher power densities. And as these frequencies are pushed towards


    Original     		PDF U-137 HEXFET Power MOSFET Designers Manual "MOS Controlled Thyristors" HEXFET Power MOSFET designer manual mosfet discrete totem pole drive CIRCUIT UC1710 application notes IRFP460 transistor databook UC1770 mosfet discrete totem pole CIRCUIT scr gate driver ic uc1710

    APT9402

    Abstract: amid mosfet amid bipolar transistor tester APT5025BN APT5025BNR apt5025 MOSFET ESD Rated AVALANCHE
    Text: APPLICATION NOTE APT9402 By: Kenneth Dierberger UNDERSTANDING THE DIFFERENCES BETWEEN STANDARD MOSFETs AND AVALANCHE ENERGY RATED MOSFETs Presented at PCIM ‘94 DALLAS 1 UNDERSTANDING THE DIFFERENCES BETWEEN STANDARD MOSFETS AND AVALANCHE ENERGY RATED MOSFETS


    Original     		PDF APT9402 APT9402 amid mosfet amid bipolar transistor tester APT5025BN APT5025BNR apt5025 MOSFET ESD Rated AVALANCHE

    APT10026JN

    Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
    Text: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original     		PDF MIL-PRF-19500 ISO9001 APT10026JN apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR

    TYC 365

    Abstract: APT5025BN APT5025BNR APT5030BNR
    Text: O s A dvanced P o w er Te c h n o l o g y APT5025BNR APT5030BNR POWER MOS IV® 500V 23.0A 0.25Q 500V 21,0A 0.30£2 AVALANCHE RATED N -C H A N N EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M A X IM U M R A T IN G S Symbol Parameter 'd *DM VGS GSM PD TJ’TSTG


    OCR Scan     		PDF APT5025BNR APT5030BNR O-247AD TYC 365 APT5025BN

    5025bn

    Abstract: APT5025BN apt4525bn apt4530bn 4525BN apt5025 025Q
    Text: A d van ced P o w er Te c h n o l o g y O D APT5025BN APT4525BN APT5030BN APT4530BN Ô S H? WER MOS IV'03 500V 450V 500V 450V 23.0A 23.0A 21.0A 21.0A 0.25Q 0.25Í2 0.30Q 0.30Q N -C H A N N EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIM UM RATINGS


    OCR Scan     		PDF APT5025BN APT4525BN APT5030BN APT4530BN 4525BN 5025BN 4530BN 5030BN APT5025/4525/5030/4530BN -247A apt5025 025Q

    APT802R4KN

    Abstract: APT6018LNR APT4030BN APT6060BN mosfet selector guide APT-6018 APT10M25bnfr APT5025BN k 3530 MOSFET 1r3b
    Text: ADVANCED PO W ER Te c h n o lo g y APT MOSFET Selector Guide LOW GATE CHARGE - FAST SWITCHING FAMILY APT Part No. APT4016BN APT4018BN APT41I20BN APT4025BN APT4030BN APT4040BN APT5020BN APT5022BN APT5025BN APT5 H0BN APT5040BN APT5050BN APT6030BN APT6033BN


    OCR Scan     		PDF APT4016BN APT4018BN APT41I20BN APT4025BN APT4030BN APT4040BN APT5020BN APT5022BN APT5025BN APT5040BN APT802R4KN APT6018LNR APT6060BN mosfet selector guide APT-6018 APT10M25bnfr k 3530 MOSFET 1r3b

    Untitled

    Abstract: No abstract text available
    Text: A dvanced P o w er Te c h n o l o g y • POWER MOS IVe APT5025BN -APT4525BN APT5030BN APT4530BN 500V 450V 500V 450V 23.0A 23.0A 21.0A 21.0A 0.25Q 0.25Q 0.30Q 0.30Q N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan     		PDF APT5025BN -APT4525BN APT5030BN APT4530BN 5025BN 4530BN 4525BN 5030BN APT5025/4525/5030/4530BN

    Untitled

    Abstract: No abstract text available
    Text: O D O S A dvanced P ow er Tec h n o lo g y APT5025BNR APT5030BNR 500V 23.0A 0.25Q 500V 21 .OA 0.30Î2 AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS •d V GS GSM PD t j ,t s t g T Parameter APT5025BNR


    OCR Scan     		PDF APT5025BNR APT5030BNR O-247AD

    Untitled

    Abstract: No abstract text available
    Text: A dvanced O D po w er Te c h n o l o g y APT5025BNR 500V 23.0A 0.25Í2 APT5030BNR 500V 21,0A 0.30Í2 Ô S POWER MOS IV® AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan     		PDF APT5025BNR APT5030BNR APT5025BNR APT5030BNR O-247AD

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED POW ER Te c h n o l o g y OD OS POWER MOS IV® APT5025BN 500V 23.0A 0.25Í1 APT5030BN 500V 21.0A 0.30Í1 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS b All Ratings: Tc = 25°C unless otherwise specified. APT


    OCR Scan     		PDF APT5025BN APT5030BN 5025BN 5030BN APT5025/5030BN O-247AD

    apt5025

    Abstract: No abstract text available
    Text: O D O S A d va n ced P o w er Te c h n o l o g y * APT5025BNR APT5030BNR 500V 23.0A 0.25Í2 500V 21.0A 0.30Q POWER MOS IV UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS V DSS APT5025BNR Parameter Drain-Source Voltage 500 Continuous Drain Current @ Tc


    OCR Scan     		PDF APT5025BNR APT5030BNR APT5025BNR MIL-STD-750 O-247AD apt5025

    APT5025BN

    Abstract: 5025bn APT4525BN apt5025
    Text: A d van ced R o w er Te c h n o lo g y 9 D APT5025BN APT4525BN APT5030BN APT4530BN Os POWER MOS IV® 500V 450V 500V 450V 23.0A 23.0A 21.0A 21.0A 0.25Q 0.25Q 0.30Q 0.30Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tr = 25°C unless otherwise specified.


    OCR Scan     		PDF APT5025BN APT4525BN APT5030BN APT4530BN 5025B /525/5030/4530BN O-247AD 5025bn apt5025

    Untitled

    Abstract: No abstract text available
    Text: A D V AN CF D PÖWFR TECHNOLOGY M'IE T> WÊ 0 2 5 7 ^ 0 ^ A d va n ced P o w er Te c h n o l o g y * OOOOk.32 17b «AVP 'T-'iPK-Ie? 405 S.W. Columbia Street Bend, Oregon 97702-1035, USA PH: 503 382-8028 FAX: (503) 388-0364 = A P T T O -2 4 7 S IN G L E P U L SE U IS R A T E D P O W E R M O SFE T s =


    OCR Scan     		PDF APT4020BNR APT4025BNR APT4030BNR APT4040BNR APT4065BNR APT4080BNR APT5020BNR APT5022BNR APT5025BNR APT5027BNR

    APT5085BN

    Abstract: APT4065BN APT6045BNR APT5027BN APT501R1BN APT4025BNR APT4030BNR APT4065BNR APT4080BNR APT5022BNR
    Text: A D VANCFD P OU FR TECHNOLOGY AD VANCED MIE I> 0257^0^ 0000fci3c? 17b 'T -V A -\'y P o w er Te c h n o l o g y IA VP 405 S.W. Columbia Street Bend, Oregon 97702-1035, USA PH: 503 382-8028 FAX: (503) 388-0364 = APT TO-247 SINGLE PULSE UIS RATED POWER MOSFETs =


    OCR Scan     		PDF 0000fci3c? O-247 APT4020BNR APT4025BNR APT4030BNR APT4040BNR APT4065BNR APT4080BNR APT5020BNR APT5022BNR APT5085BN APT4065BN APT6045BNR APT5027BN APT501R1BN

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED POWER T E C H N O L O G Y Tfl DE | □ S S 7 C1GC] OOODQOfl 4 T - 3 9 -'S XI P For Additional Information Contact APT Sales Representatives Or The Factory. APT PART # UNITS Vds VOLTS Rds ON OHMS Id cont. AMPS Idm AMPS Pd WATTS APT1002RBN APT1002R4BN


    OCR Scan     		PDF APT1002RBN APT1002R4BN APT901R6BN APT901R9BN APT801R2BN APT801R4BN APT6060BN APT6070BN APT5550BN APT5560BN

    APT5085BN

    Abstract: APT501R1BN APT801R2BN APT5025BN APT1002R4BN
    Text: ADVANCED APT PA R T NUM BER APT1001RBN APT1001R2BN APT1002RBN APT1002R4BN APT1003R5BN APT1004R2BN APT901RBN APT901R2BN APT902RBN APT902R4BN APT903R5BN APT904R2BN APT8075BN APT8090BN APT801R2BN APT801R4BN APT802RBN APT802R4BN APT7575BN APT7S90BN APT751R2BN


    OCR Scan     		PDF 0GDD27b APT1001RBN APT1001R2BN APT1002RBN APT1002R4BN O-247 APT5085BN APT501R1BN APT801R2BN APT5025BN