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    APT44GA60SD30 Search Results

    APT44GA60SD30 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    APT44GA60SD30 Microsemi Insulated Gate Bipolar Transistor - Power MOS 8; Package: D3; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 44; Original PDF

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    APT44GA60B

    Abstract: APT44GA60BD30 APT44GA60SD30 MIC4452 SD30
    Text: APT44GA60BD30 APT44GA60SD30 600V High Speed PT IGBT T APT44GA60SD30 O24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 through leading technology silicon design and lifetime control processes. A reduced Eoff D3PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT44GA60BD30 APT44GA60SD30 APT44GA60B APT44GA60BD30 APT44GA60SD30 MIC4452 SD30

    Untitled

    Abstract: No abstract text available
    Text: APT44GA60BD30C APT44GA60SD30C 600V High Speed PT IGBT FEATURES APT44GA60SD30C TO -24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise


    Original     		PDF APT44GA60BD30C APT44GA60SD30C

    474J

    Abstract: No abstract text available
    Text: APT44GA60BD30 APT44GA60SD30 600V High Speed PT IGBT T APT44GA60SD30 O24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 through leading technology silicon design and lifetime control processes. A reduced Eoff D 3 PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT44GA60BD30 APT44GA60SD30 474J

    Untitled

    Abstract: No abstract text available
    Text: APT44GA60BD30 APT44GA60SD30 600V High Speed PT IGBT T APT44GA60SD30 O24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 through leading technology silicon design and lifetime control processes. A reduced Eoff D 3 PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT44GA60BD30 APT44GA60SD30

    APT44GA60BD30C

    Abstract: Fast Recovery Bridge Rectifier, 60A, 600V APT44GA60SD30C APT44GA60B MIC4452 rectifier bridge 300v 30a
    Text: APT44GA60BD30C APT44GA60SD30C 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is TO APT44GA60SD30C -2 47 achieved through leading technology silicon design and lifetime control processes. A D3PAK reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise


    Original     		PDF APT44GA60BD30C APT44GA60SD30C APT44GA60BD30C Fast Recovery Bridge Rectifier, 60A, 600V APT44GA60SD30C APT44GA60B MIC4452 rectifier bridge 300v 30a

    Untitled

    Abstract: No abstract text available
    Text: APT44GA60BD30C APT44GA60SD30C 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise


    Original     		PDF APT44GA60BD30C APT44GA60SD30C