Thunderbolt
Abstract: APT40GT60BR
Text: APT40GT60BR 600V 80A Thunderbolt IGBT TO-247 The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop
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APT40GT60BR
O-247
150KHz
MIL-STD-750
Thunderbolt
APT40GT60BR
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Thunderbolt IGBT
Abstract: No abstract text available
Text: APT40GT60BR 600V, 80A, VCE ON = 2.1V Typical Thunderbolt IGBT The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed. TO
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APT40GT60BR
150KHz
O-247
Thunderbolt IGBT
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th 2190
Abstract: No abstract text available
Text: APT40GT60BR APT40GT60BR 600V 80A Thunderbolt IGBT TO-247 The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop
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APT40GT60BR
O-247
150KHz
th 2190
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APT40GT60BR
Abstract: No abstract text available
Text: APT40GT60BR 600V, 80A, VCE ON = 2.1V Typical Thunderbolt IGBT The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed. TO
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APT40GT60BR
150KHz
Collector46
APT40GT60BR
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igbt 400V 40A
Abstract: silicon carbide
Text: APT40GT60BR 600V, 80A, VCE ON = 2.1V Typical Thunderbolt IGBT The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed. TO
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APT40GT60BR
150KHz
O-247
igbt 400V 40A
silicon carbide
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Untitled
Abstract: No abstract text available
Text: APT40GT60BR APT40GT60BR 600V 80A Thunderbolt IGBT The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop
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APT40GT60BR
150KHz
T0-247
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ic 7493
Abstract: data sheet IC 7493 7493 IC IC 7493 data sheet Datasheet of 7493 IC APT40GP60B2DQ2G definition of 7493 ic 7493 7493 APPLICATION 7493 integrated circuit
Text: APT40GP60B2DQ2 G 600V TYPICAL PERFORMANCE CURVES APT40GP60B2DQ2 APT40GP60B2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching
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APT40GP60B2DQ2
APT40GP60B2DQ2
APT40GP60B2DQ2G*
ic 7493
data sheet IC 7493
7493 IC
IC 7493 data sheet
Datasheet of 7493 IC
APT40GP60B2DQ2G
definition of 7493 ic
7493
7493 APPLICATION
7493 integrated circuit
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Untitled
Abstract: No abstract text available
Text: APT50GT60BRDQ2 G 600V TYPICAL PERFORMANCE CURVES APT50GT60BRDQ2 APT50GT60BRDQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® TO -2 47 The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast
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APT50GT60BRDQ2
APT50GT60BRDQ2G*
100KHz
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Untitled
Abstract: No abstract text available
Text: 600V 2x40A APT40DQ60BCT APT40DQ60BCTG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE TO PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode
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2x40A
APT40DQ60BCT
APT40DQ60BCTG*
O-247
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transistor k 4213
Abstract: APT40DQ60BCT APT40DQ60BCTG APT40GT60BR
Text: 600V 2x40A APT40DQ60BCT APT40DQ60BCTG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode
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2x40A
APT40DQ60BCT
APT40DQ60BCTG*
O-247
transistor k 4213
APT40DQ60BCT
APT40DQ60BCTG
APT40GT60BR
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transistor k 4212
Abstract: APT40DQ60S datasheets transistor k 4212 k 4212 APT40DQ60B APT40GT60BR
Text: 1 2 TO -2 4 7 1 - Cathode 2 - Anode Back of Case - Cathode D3PAK 1 2 APT40DQ60B APT40DQ60S 600V 600V 40A 40A 2 1 ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times
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APT40DQ60B
APT40DQ60S
O-247
transistor k 4212
APT40DQ60S
datasheets transistor k 4212
k 4212
APT40DQ60B
APT40GT60BR
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Untitled
Abstract: No abstract text available
Text: APT65GP60L2DQ2 600V TYPICAL PERFORMANCE CURVES APT65GP60L2DQ2 APT65GP60L2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® TO-264 Max The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching
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APT65GP60L2DQ2
APT65GP60L2DQ2G*
O-264
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SP6-P
Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
Text: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.
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10F-A,
SP6-P
N-channel MOSFET 800v 50a to-247
SMPS 1000w IGBT REFERENCE DESIGN
DRF1400
45A, 1200v n-channel npt series igbt
APTES80DA120C3G
APT35DL120HJ
semiconductors cross reference
IGBT triple modules 100A
2000W mosfet power inverter
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schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
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P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
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APT10026JN
Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
Text: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on
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MIL-PRF-19500
ISO9001
APT10026JN
apt1004rbn
APT10050JN
FREDFETs
APT8030jn
APT4020BN
APT5010LVFR
APT5014LVR
arf444
APT10M09LVR
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smps 1000W
Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit
Text: 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984. Our focus is on high voltage, high power and high performance applications. Our commitment is to maintain
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des691
10F-A,
smps 1000W
600V 300A igbt dc to dc boost converter
SP6-P
DRF1400
smps 500w half bridge
DRF1300
1000w inverter MOSFET
1000W solar power inverter
APT30GT60BRG
3000w inverter mosfet circuit
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APT30GN60BDQ2
Abstract: APT30GN60BDQ2G MIC4452 30A 600V Ultrafast Diode APT TO-247
Text: APT30GN60BDQ2 G 600V TYPICAL PERFORMANCE CURVES APT30GN60BDQ2 APT30GN60BDQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum
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APT30GN60BDQ2
APT30GN60BDQ2
APT30GN60BDQ2G*
APT30GN60BDQ2G
MIC4452
30A 600V Ultrafast Diode APT TO-247
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Untitled
Abstract: No abstract text available
Text: APT50GP60B2DQ2 G 600V TYPICAL PERFORMANCE CURVES APT50GP60B2DQ2 APT50GP60B2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® (B2) T-Max® The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching
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APT50GP60B2DQ2
APT50GP60B2DQ2
APT50GP60B2DQ2G*
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Untitled
Abstract: No abstract text available
Text: APT40GP60B2DQ2 G 600V TYPICAL PERFORMANCE CURVES APT40GP60B2DQ2 APT40GP60B2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching
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APT40GP60B2DQ2
APT40GP60B2DQ2
APT40GP60B2DQ2G*
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5017BVR
Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on
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MIL-PRF-19500
ISO9001
5017BVR
40814
5020BN
1431 T
APT5010LVR
APT1001RBLC
apt10050
APT30M85BVR
APT5020BLC
apt2x101D60
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APT50GT60BRDQ2
Abstract: APT50GT60BRDQ2G APT40GT60BR
Text: APT50GT60BRDQ2 G 600V TYPICAL PERFORMANCE CURVES APT50GT60BRDQ2 APT50GT60BRDQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® TO -2 47 The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast
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APT50GT60BRDQ2
APT50GT60BRDQ2
APT50GT60BRDQ2G*
100KHz
APT50GT60BRDQ2G
APT40GT60BR
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APT50GN60BDQ2G
Abstract: APT50GN60BDQ2 MIC4452 silicon carbide apt50gn60 IGBT 1500 APT50GN60BDQ
Text: APT50GN60BDQ2 G 600V TYPICAL PERFORMANCE CURVES APT50GN60BDQ2 APT50GN60BDQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum
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APT50GN60BDQ2
APT50GN60BDQ2
APT50GN60BDQ2G*
APT50GN60BDQ2G
MIC4452
silicon carbide
apt50gn60
IGBT 1500
APT50GN60BDQ
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400v 20A ultra fast recovery diode
Abstract: TO-264 Jedec package outline 80A bridge rectifier APT40GT60BR APT68GA60B2D40 APT68GA60LD40 MIC4452
Text: APT68GA60B2D40 APT68GA60LD40 600V APT68GA60B2D40 High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT68GA60B2D40
APT68GA60LD40
400v 20A ultra fast recovery diode
TO-264 Jedec package outline
80A bridge rectifier
APT40GT60BR
APT68GA60B2D40
APT68GA60LD40
MIC4452
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Untitled
Abstract: No abstract text available
Text: APT40GT60BR ADVANCED POW ER Te c h n o l o g y 600V 80A Thunderbolt IGBT The Thunderbolt IGBT is a new generation ot high voltage power IGBTs. Using Non-Punch ThroughTechnology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed.
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APT40GT60BR
150KHz
APT40G
MIL-STD-750
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