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Advanced Power Technology APT35GP120B2DF2 INSULATED GATE BIPOLAR TRANSISTOR, 96A I(C), 1200V V(BR)CES, N-CHANNEL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	APT35GP120B2DF2		18			1 $16.5 10 $12.375 100 $12.375 1000 $12.375 10000 $12.375	Buy Now

APT35GP120B2DF2 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
APT35GP120B2DF2		Advanced Power Technology	POWER MOS 7 IGBT		Original	PDF
APT35GP120B2DF2		Unknown	High Voltage, 1200V 96A, IGBT N-Type		Original	PDF

APT35GP120B2DF2 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
IC 7407 Abstract: IC 7407 datasheet DIODE 59 APT35GP120B2DF2 228F 70A 1200V IGBTS Text: APT35GP120B2DF2 1200V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency	Original	APT35GP120B2DF2 IC 7407 IC 7407 datasheet DIODE 59 APT35GP120B2DF2 228F 70A 1200V IGBTS	PDF
ic 7407 Abstract: 7407 APT35GP120B2DF2 IC 7407 datasheet 228F Text: APT35GP120B2DF2 TYPICAL PERFORMANCE CURVES APT35GP120B2DF2 1200V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency	Original	APT35GP120B2DF2 ic 7407 7407 APT35GP120B2DF2 IC 7407 datasheet 228F	PDF
35GP120 Abstract: 35GP120B2DF2 35GP120B 35GP120B2 Text: APT35GP120B2DF2 1200V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency	Original	APT35GP120B2DF2 35GP120 35GP120B2DF2 35GP120B 35GP120B2	PDF
catalog mosfet Transistor smd Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt Text: 1 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance	Original		PDF
APT100GF60LR Abstract: 1200 volt mosfet FREDFETs sot-227 footprint APT75GP120JDF3 APT609RK3VFR APT8075BVR APT5010jvr APT20M19JVR APT1001RBVR Text: Discrete Power Products 2003 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of	Original		PDF