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    APT35GA90B Search Results

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    APT35GA90B Price and Stock

    Microchip Technology Inc APT35GA90B

    IGBT PT 900V 63A TO247
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    DigiKey APT35GA90B Tube 110
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    Mouser Electronics APT35GA90B 56
    • 1 $5.28
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    Microchip Technology Inc APT35GA90B Tube 26 Weeks
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    Onlinecomponents.com APT35GA90B
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    TME APT35GA90B 1
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    NAC APT35GA90B Tube 72
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    Microchip Technology Inc APT35GA90BD15

    IGBT PT 900V 63A TO247
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    DigiKey APT35GA90BD15 Tube 90
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    Mouser Electronics APT35GA90BD15
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    Newark APT35GA90BD15 Bulk 90
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    Microchip Technology Inc APT35GA90BD15 Tube 26 Weeks
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    TME APT35GA90BD15 1
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    NAC APT35GA90BD15 Tube 59
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    Richardson RFPD APT35GA90BD15 90
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    APT35GA90B Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT35GA90B Microsemi Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-247 [B]; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 35; Original PDF
    APT35GA90BD15 Microsemi Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-247 [B]; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 35; Original PDF

    APT35GA90B Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    full wave BRIDGE RECTIFIER 1044

    Abstract: APT35GA90BD15 MIC4452
    Text: APT35GA90BD15 900V High Speed PT IGBT T O24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		APT35GA90BD15 full wave BRIDGE RECTIFIER 1044 APT35GA90BD15 MIC4452 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT35GA90BD15 APT35GA90SD15 900V High Speed PT IGBT B TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		APT35GA90BD15 APT35GA90SD15 APP61 PDF

    DIODE ED 15

    Abstract: high speed diode 15A APT10035LLL APT35GA90BD15 MIC4452 apt10035
    Text: APT35GA90BD15 900V High Speed PT IGBT T O24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		APT35GA90BD15 DIODE ED 15 high speed diode 15A APT10035LLL APT35GA90BD15 MIC4452 apt10035 PDF

    full wave BRIDGE RECTIFIER 1044

    Abstract: No abstract text available
    Text: APT35GA90BD15 APT35GA90SD15 900V High Speed PT IGBT B TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		APT35GA90BD15 APT35GA90SD15 Ver18) full wave BRIDGE RECTIFIER 1044 PDF

    APT35GA90B

    Abstract: APT35GA90S MIC4452
    Text: APT35GA90B APT35GA90S 900V High Speed PT IGBT TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		APT35GA90B APT35GA90S APT35GA90B APT35GA90S MIC4452 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT35GA90B APT35GA90S 900V High Speed PT IGBT APT35GA90S TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -24 7 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		APT35GA90B APT35GA90S PDF

    APT35GA90BD15

    Abstract: MIC4452 full wave BRIDGE RECTIFIER 1044
    Text: APT35GA90BD15 900V High Speed PT IGBT T O24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		APT35GA90BD15 APT35GA90BD15 MIC4452 full wave BRIDGE RECTIFIER 1044 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT35GA90B APT35GA90S 900V High Speed PT IGBT TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -24 7 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		APT35GA90B APT35GA90S PDF

    full wave BRIDGE RECTIFIER 1044

    Abstract: DIODE RECTIFIER BRIDGE SINGLE 200A APT35GA90BD15 APT35GA90SD15 MIC4452 SD15
    Text: APT35GA90BD15 APT35GA90SD15 900V High Speed PT IGBT B TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		APT35GA90BD15 APT35GA90SD15 full wave BRIDGE RECTIFIER 1044 DIODE RECTIFIER BRIDGE SINGLE 200A APT35GA90BD15 APT35GA90SD15 MIC4452 SD15 PDF

    IGBT microsemi

    Abstract: APT35GA90B MIC4452 power PFC max1934
    Text: APT35GA90B 900V High Speed PT IGBT TO -2 47 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		APT35GA90B IGBT microsemi APT35GA90B MIC4452 power PFC max1934 PDF

    SP6-P

    Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
    Text: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original     		10F-A, SP6-P N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    smps 1000W

    Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit
    Text: 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984. Our focus is on high voltage, high power and high performance applications. Our commitment is to maintain


    Original     		des691 10F-A, smps 1000W 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit PDF

    SOT-227 lead frame

    Abstract: 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG 5kw SMPS full bridge Fast Recovery Rectifiers mx gp 043 SMBx6.0A DO215AA PFC 1.5kw 1.5ke series
    Text: Power Matters High Reliability Up-Screened Plastic Products Portfolio TRANSIENT VOLTAGE SUPPRESSORS MOSFETs IGBTs RECTIFIERS About Microsemi’s High-Reliability Screened Devices Standard commercial grade semiconductor testing may not detect some types of problems such as cracked die or ionic


    Original     		MIL-PRF-19500, sO-268 O-220 O-220 O-247 O-264 OT-227 SOT-227 lead frame 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG 5kw SMPS full bridge Fast Recovery Rectifiers mx gp 043 SMBx6.0A DO215AA PFC 1.5kw 1.5ke series PDF

    VRF2933FL

    Abstract: VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301
    Text: Power Products MICROSEMI POWER PORTFOLIOPortfolio 2014-2015 Power Products New image here TBD Power Semiconductors Power Modules RF Power MOSFETs Power Matters. About Microsemi Microsemi Corporation Nasdaq: MSCC offers a comprehensive portfolio of semiconductor and system


    Original     		MS5-001-14 VRF2933FL VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301 PDF