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    APT28GA60SD15 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    APT28GA60SD15 Microsemi Insulated Gate Bipolar Transistor - Power MOS 8; Package: D3; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 28; Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: APT28GA60BD15 APT28GA60SD15 600V High Speed PT IGBT B TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT28GA60BD15 APT28GA60SD15 APP11

    diode bridge 16A

    Abstract: No abstract text available
    Text: APT28GA60BD15 APT28GA60SD15 600V High Speed PT IGBT B TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT28GA60BD15 APT28GA60SD15 diode bridge 16A

    DIODE RECTIFIER BRIDGE SINGLE 200A

    Abstract: APT28GA60BD15 APT28GA60SD15 MIC4452 SD15
    Text: APT28GA60BD15 APT28GA60SD15 600V High Speed PT IGBT B TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT28GA60BD15 APT28GA60SD15 APPLICAT67 DIODE RECTIFIER BRIDGE SINGLE 200A APT28GA60BD15 APT28GA60SD15 MIC4452 SD15