TO-267
Abstract: No abstract text available
Text: APT10057WVR 30,000 10µS 100µS OPERATION HERE LIMITED BY RDS ON 10,000 10 C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) 70 1mS 5 10mS 1 100mS TC =+25°C TJ =+150°C SINGLE PULSE .5 IDR, REVERSE DRAIN CURRENT (AMPERES) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
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APT10057WVR
100mS
O-267
TO-267
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Untitled
Abstract: No abstract text available
Text: APT10057WVR 17.3A 0.570Ω 1000V POWER MOS V TO-267 V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT10057WVR
O-267
O-267
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APT10026JN
Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
Text: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on
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MIL-PRF-19500
ISO9001
APT10026JN
apt1004rbn
APT10050JN
FREDFETs
APT8030jn
APT4020BN
APT5010LVFR
APT5014LVR
arf444
APT10M09LVR
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5017BVR
Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on
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MIL-PRF-19500
ISO9001
5017BVR
40814
5020BN
1431 T
APT5010LVR
APT1001RBLC
apt10050
APT30M85BVR
APT5020BLC
apt2x101D60
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APT6015LVR
Abstract: 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR
Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on
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MIL-PRF-19500
ISO9001
APT6015LVR
5020bn
APT6011LVFR
arf450
5017bvr
APT2*61D120J
FREDFETs
apt8015jvr
APT100GF60LR
APT5014LVR
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APT5012
Abstract: No abstract text available
Text: Standard Power MOSFETs Power MOS V MOSFET Technology. is a patented selfaligned interdigitated open cell structure with improved switching and RDS ON advantages over our previous MOS IV® generation and over industry standard closed cell devices. Feature
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APT5019HVR
APT5026HVR
APT4014HVR
APT4018HVR
O-258
APT20M42HVR
APT1001R1AVR
APT6032AVR
APT6035AVR
APT5012
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D 92 M - 02 DIODE
Abstract: No abstract text available
Text: • R r M APT10057WVR A d van ced po w er Te c h n o l o g y 1000v 17.3a 0.57a POWER M O S V ‘ Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT10057WVR
1000v
O-267
APT10057W
00A/ps)
IL-STD-750
D 92 M - 02 DIODE
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