APT1004RKN
Abstract: APT1004R2KN 1004r
Text: D TO-220 G APT1004RKN APT1004R2KN S 1000V 3.6A 4.00 Ω 1000V 3.5A 4.20 Ω POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: T C = 25°C unless otherwise specified. MAXIMUM RATINGS Symbol Parameter V DSS APT1004R2KN APT1004RKN
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O-220
APT1004RKN
APT1004R2KN
O-220AB
APT1004RKN
APT1004R2KN
1004r
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APT10026JN
Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
Text: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on
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MIL-PRF-19500
ISO9001
APT10026JN
apt1004rbn
APT10050JN
FREDFETs
APT8030jn
APT4020BN
APT5010LVFR
APT5014LVR
arf444
APT10M09LVR
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APT1004RKN
Abstract: No abstract text available
Text: • r IT J M A dvanced R ow er Te c h n o l o g y APT1004RKN APT1004R2KN 1000V 3.6A 4.00Q 1000V 3.5A 4.20Q POWER MOS IV® N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: Tc = 25°C unless otherwise specified. MAXIMUM RATINGS Symbol Parameter
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APT1004RKN
APT1004R2KN
APT1004RKN
APT1004R/1004R2KN
TQ-220AB
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Untitled
Abstract: No abstract text available
Text: A dvanced P o w er Te c h n o lo g y * APT1004RKN APT1004R2KN 1000V 3.6A 4.00 Q 1000V 3.5A 4.20 Q POWER MOS IV' N -C H A NN EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS 'd ’d m ^GS PD T j’^STG All Ratings: Tc = 25°C unless otherwise specified.
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APT1004RKN
APT1004R2KN
O-22QAB
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Untitled
Abstract: No abstract text available
Text: A dvanced P ow er Te c h n o lo g y O D APT1004RKN APT1004R2KN O s 1000V 3.6A 4.0012 1000V 3.5A 4.20U R F íT E r MOS IV'01 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M A X IM U M R A T IN G S Symbol V DSS 'dm V GS PD VSTG A ll R a tin g s: T c = 2 5 °C u n le ss o th e rw is e sp e cifie d .
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APT1004RKN
APT1004R2KN
PT1004R
T1004R
APT1004R/1004R2KN
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Untitled
Abstract: No abstract text available
Text: • R A dvanced W .Æ P o w e r M Te c h n o l o g y * A P T10 0 4 R K N AP T10 0 4 R 2 K N 10 0 0 V 10 0 0 V 3 .6 A 4 .0 0 i i 3 .5 A 4 .2 0 Ü POWER MOS IV N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.
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APT1004R2KN
APT1004RKN
TQ-220AB
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APT802R4KN
Abstract: APT10050JN lf 3560 FREDFET APT5010JN APT8018 APT4065BN 690 mosfet APT10M13JNR R6KN
Text: APT PLASTIC PACKAGE MOSFET/FREDFET PRODUCTS BV DSS Volts 400 R ds ° n Ohms lD(Cont.) Amps PD Ciss(pF) Watts Typ Qg(nC) Typ APT Part No. APT4016BN APT4018BN APT4016BNR APT4018BNR APT4020BN APT4025BN APT4020BNR APT4025BNR LOW Ros(ON) LOW Ros(ON) UIS RATED
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APT4016BN
APT4018BN
APT4016BNR
APT4018BNR
APT4020BN
APT4025BN
APT4020BNR
APT4025BNR
APT10M13JNR
APT10M15JNR
APT802R4KN
APT10050JN
lf 3560
FREDFET
APT5010JN
APT8018
APT4065BN
690 mosfet
R6KN
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