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    APT10021 Price and Stock

    Microchip Technology Inc APT10021JFLL

    MOSFET N-CH 1000V 37A ISOTOP
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    DigiKey APT10021JFLL Tube 47 1
    • 1 $101.2
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    • 100 $82.1375
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    Avnet Americas APT10021JFLL Tube 10
    • 1 $101.2
    • 10 $101.2
    • 100 $87.4
    • 1000 $82.13
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    Mouser Electronics APT10021JFLL
    • 1 $101.2
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    Newark APT10021JFLL Bulk 10
    • 1 $101.2
    • 10 $101.2
    • 100 $87.4
    • 1000 $82.13
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    Microchip Technology Inc APT10021JFLL
    • 1 $101.2
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    Onlinecomponents.com APT10021JFLL
    • 1 -
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    TME APT10021JFLL 1
    • 1 $147.68
    • 10 $116.34
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    NAC APT10021JFLL Tube 3
    • 1 $93.87
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    • 1000 $80.13
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    Richardson RFPD APT10021JFLL 10
    • 1 -
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    • 100 $86.77
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    EBV Elektronik APT10021JFLL 33 Weeks 10
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    Master Electronics APT10021JFLL
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    Vyrian APT10021JFLL 60
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    Microchip Technology Inc APT10021JLL

    MOSFET N-CH 1000V 37A ISOTOP
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    DigiKey APT10021JLL Tube 10
    • 1 -
    • 10 $99.231
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    Avnet Americas APT10021JLL Tube 10
    • 1 $99.23
    • 10 $99.23
    • 100 $85.69
    • 1000 $80.55
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    Mouser Electronics APT10021JLL
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    Newark APT10021JLL Bulk 10
    • 1 $99.23
    • 10 $99.23
    • 100 $85.69
    • 1000 $80.55
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    Microchip Technology Inc APT10021JLL
    • 1 $99.23
    • 10 $99.23
    • 100 $85.69
    • 1000 $78.61
    • 10000 $76.03
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    Onlinecomponents.com APT10021JLL
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    • 10 $82.89
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    TME APT10021JLL 1
    • 1 $144.14
    • 10 $114.77
    • 100 $114.77
    • 1000 $114.77
    • 10000 $114.77
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    NAC APT10021JLL Tube 3
    • 1 $92.06
    • 10 $92.06
    • 100 $84.79
    • 1000 $78.59
    • 10000 $78.59
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    Richardson RFPD APT10021JLL 10
    • 1 -
    • 10 $88.5
    • 100 $85.1
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    Avnet Silica APT10021JLL 28 Weeks 10
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    EBV Elektronik APT10021JLL 27 Weeks 10
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    Master Electronics APT10021JLL
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    Advanced Power Technology APT10021JFLLX

    POWER FIELD-EFFECT TRANSISTOR, 37A I(D), 1000V, 0.21OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
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    Quest Components APT10021JFLLX 2
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    APT10021 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    APT10021DN Advanced Power Technology APT Power MOS IV Commercial and Custom DIE Scan PDF
    APT10021JFLL Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT10021JFLL Microsemi Power MOS 7 Low Loss FREDFET Original PDF
    APT10021JLL Advanced Power Technology Low loss, high voltage, N-Channel enhancement mode power MOSFET Original PDF
    APT10021JLL Microsemi Power MOS 7 Low Loss MOSFET Original PDF

    APT10021 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: APT10021JFLL 1000V 37A 0.210Ω R POWER MOS 7 FREDFET S S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT10021JFLL

    TR510

    Abstract: APT10021JLL DSA003641
    Text: APT10021JLL 1000V 37A 0.210Ω POWER MOS 7 R MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT10021JLL OT-227 TR510 APT10021JLL DSA003641

    Untitled

    Abstract: No abstract text available
    Text: APT10021JLL 1000V 37A 0.210Ω POWER MOS 7 R MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT10021JLL OT-227

    APT10021JFLL

    Abstract: DSA003640
    Text: APT10021JFLL 1000V 37A 0.210Ω POWER MOS 7 R FREDFET S S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT10021JFLL OT-227 APT10021JFLL DSA003640

    fast diode SOT-227

    Abstract: No abstract text available
    Text: APT10021JFLL 1000V 37A 0.210W POWER MOS 7TM FREDFET • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package


    Original     		PDF APT10021JFLL OT-227 fast diode SOT-227

    Untitled

    Abstract: No abstract text available
    Text: APT10021JFLL 1000V 37A 0.210Ω R POWER MOS 7 FREDFET S S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT10021JFLL OT-227

    diode 148

    Abstract: No abstract text available
    Text: APT10021JLL 1000V 37A 0.210W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses


    Original     		PDF APT10021JLL OT-227 diode 148

    Untitled

    Abstract: No abstract text available
    Text: APT10021JLL 1000V 37A 0.210Ω R POWER MOS 7 MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT10021JLL

    SP6-P

    Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
    Text: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original     		PDF 10F-A, SP6-P N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter

    catalog mosfet Transistor smd

    Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt
    Text: 1 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance


    Original     		PDF

    sot-227 footprint

    Abstract: VRF2933 SP6-P ARF1511 DRF1200 APT35GP120JDQ2 ARF521 TO-247 smps welder inverter APTGT25DA120D1G
    Text: Power Semiconductors Power Modules & RF Power MOSFETs 2006 Power Products Group 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original     		PDF

    SOT-227 lead frame

    Abstract: 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG 5kw SMPS full bridge Fast Recovery Rectifiers mx gp 043 SMBx6.0A DO215AA PFC 1.5kw 1.5ke series
    Text: Power Matters High Reliability Up-Screened Plastic Products Portfolio TRANSIENT VOLTAGE SUPPRESSORS MOSFETs IGBTs RECTIFIERS About Microsemi’s High-Reliability Screened Devices Standard commercial grade semiconductor testing may not detect some types of problems such as cracked die or ionic


    Original     		PDF MIL-PRF-19500, sO-268 O-220 O-220 O-247 O-264 OT-227 SOT-227 lead frame 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG 5kw SMPS full bridge Fast Recovery Rectifiers mx gp 043 SMBx6.0A DO215AA PFC 1.5kw 1.5ke series

    LE79Q2281

    Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
    Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security


    Original     		PDF

    mj 1504 transistor equivalent

    Abstract: ARF450 FREDFETs transistors mj 1504 APT1201R2BLL APT60GF120JRD APT60M75JVR APT100S20B APT4014BVR APT1208
    Text: 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance this position as


    Original     		PDF

    VRF2933FL

    Abstract: VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301
    Text: Power Products MICROSEMI POWER PORTFOLIOPortfolio 2014-2015 Power Products New image here TBD Power Semiconductors Power Modules RF Power MOSFETs Power Matters. About Microsemi Microsemi Corporation Nasdaq: MSCC offers a comprehensive portfolio of semiconductor and system


    Original     		PDF MS5-001-14 VRF2933FL VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301

    Untitled

    Abstract: No abstract text available
    Text: AD VA NC ED PO UE R T E C H N O L O G Y J4 Ï E D O S iT W O O O D S'îfl If lf l W ÊASIP A dvanced POWER T e c h n o lo g y O D 2 APT10021DFN 1000V 40.0A 0.21 APT9021DFN 900V 40.0A 0.21 O S(2) u POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER M O SF E fS


    OCR Scan     		PDF APT10021DFN APT9021DFN 9021D 0021D MIL-STD-750

    APT10021DFN

    Abstract: APT9021DFN T3A15
    Text: ADVANCED POWER TECHNOLOGY J M E 0 2 5 7 *10*1 » Iflfl « A V P ADVANCED ROWER Techno lo g y O D 2 « s í! ) 00005^6 APT10021DFN 1000V 40.0A 0.21 APT9021DFN 900V 40.0A 0.21 0 S (2 ) POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POW ER M O S F if^


    OCR Scan     		PDF 02STW1 T-3A-15 APT10021DFN APT9021DFN APT9021DFN PT10021 APT10021 APT9021 MIL-STD-750 T3A15

    APT40M80DN

    Abstract: APT801R2DN mos die APT-106 APT5020DN APT5025DN APT601R3DN APT5540DN APT5023 co257
    Text: ADVANCTD POUJFR TECHNOLOGY MT E D • QSSV'IQ'l 0000343 SOT APT POWER MOS IV COMMERCIAL AND CUSTOM DIE WAVR T - 2Æ -IS ' INTRODUCTION: The purpose of this APT Note is to describe the Power MOS IV™ Transistor Die available from Advanced Power Technology.


    OCR Scan     		PDF APT-105 APT-106 APT-107 APT-108 APT40M80DN APT801R2DN mos die APT-106 APT5020DN APT5025DN APT601R3DN APT5540DN APT5023 co257

    APT1001RD

    Abstract: APT5023
    Text: ADVANCTD POUJFR TECHNOLOGY MT E D • QSSV'IQ'l 0000343 SOT APT POWER MOS IV COMMERCIAL AND CUSTOM DIE WAVR T - 2Æ -IS ' INTRODUCTION: The purpose of this APT Note is to describe the Power MOS IV™ Transistor Die available from Advanced Power Technology.


    OCR Scan     		PDF APT-104 APT-105 APT-106 APT-107 APT-108 APT1001RD APT5023