IRFP60A
Abstract: 40A 45V to-220 Schottky IRF7210 ir*c30ud IRFB9N65 2CWQ03FN IR 200V P-Channel fets IRFIB7N50A CONVERTER IRG4IBC10UD 876-1413
Text: powireview The Technology Update for People in Power New HEXFET MOSFETs for Every Power Supply Application IR Chip Set First to Meet Newest Notebook PC Power Standard New P-Channel HEXFET® Power MOSFETs Offer Best Performance for Low Voltage Circuits New Schottky Diodes
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O-220
Q101-Compliant
IRFP60A
40A 45V to-220 Schottky
IRF7210
ir*c30ud
IRFB9N65
2CWQ03FN
IR 200V P-Channel fets
IRFIB7N50A CONVERTER
IRG4IBC10UD
876-1413
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10BQ040
Abstract: IRF7809A IRF7809AV
Text: PD-90010 IRF7809AV • • • • • N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications Description This new device employs advanced HEXFET Power
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PD-90010
IRF7809AV
IRF7809AV
Cd52-7105
10BQ040
IRF7809A
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LM358 vs LM741
Abstract: LM324 vs LM741 Wavetek 187 AN-959 AN959 lm358 multimeter LM741 LM324 HEXSENSE LM741 vs. LM324
Text: AN-959 An Introduction to the HEXSenseTM Current-Sensing Device HEXSense and HEXFET are trademarks of International Rectifier by S. CLEMENTE, H. ISHII, S.YOUNG Introduction This application note will acquaint the designer with International Rectifier's new family of HEXFET power
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AN-959
LM358 vs LM741
LM324 vs LM741
Wavetek 187
AN-959
AN959
lm358 multimeter
LM741
LM324
HEXSENSE
LM741 vs. LM324
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10BQ040
Abstract: IRF7807 IRF7807V
Text: FOR REVIEW ONLY PD-TBD IRF7807V • • • • N Channel Application Specific MOSFET Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented
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IRF7807V
IRF7807V
10BQ040
IRF7807
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doctor-blade
Abstract: 150um
Text: Application Note AN-1011 Assembly of FlipFET Devices by Hazel Schofield and Martin Standing, International Rectifier FlipFET™ is a new generation of HEXFET Power MOSFET package from International Rectifier. FlipFET™ combines the latest die design and wafer
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AN-1011
doctor-blade
150um
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IRF7811
Abstract: 10BQ040 IRF7809 93812
Text: PD - 93812 PD - 93813 IRF7809/IRF7811 IRF7809/IRF7811 Provisional Datasheet • N-Channel Application-Specific MOSFETs HEXFET Chipset for DC-DC Converters • Ideal for CPU Core DC-DC Converters • New CopperStrapTM Interconnect for Lower Electrical and Thermal Resistance
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IRF7809/IRF7811
IRF7811
10BQ040
IRF7809
93812
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IRF7811
Abstract: IRF7809 93812 HEXFET SO-8 10BQ040
Text: PD - 93812 PD - 93813 IRF7809/IRF7811 IRF7809/IRF7811 Provisional Datasheet • N-Channel Application-Specific MOSFETs HEXFET Chipset for DC-DC Converters • Ideal for CPU Core DC-DC Converters • New CopperStrapTM Interconnect for Lower Electrical and Thermal Resistance
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IRF7809/IRF7811
la252-7105
IRF7811
IRF7809
93812
HEXFET SO-8
10BQ040
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applications of mos controlled thyristor
Abstract: MOS Controlled Thyristor Semiconductor Power AN-7504 mosfet controlled thyristor mos Turn-off Thyristor P channel 600v 20a IGBT ED26 diode Pelly 10A fast Gate Turn-off Thyristor transistor Ia 15 rca
Text: The IGBTs - A New High Conductance MOS-Gated Device Application Note Abstract Title N86 bt he BTs w gh ncce OSted vice utho eyrds terrpoon, minctor, er OCI O frk geode May 1992 ALUMINUM A new MOS gate-controlled power switch with a very low onresistance is described. The fabrication process is similar to
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10BQ040
Abstract: IRF7807 IRF7807A power supply with mosfet dm 100
Text: PD – 91747C IRF7807/IRF7807A HEXFET Chip-Set for DC-DC Converters • • • • N Channel Application Specific MOSFETs Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses Description These new devices employ advanced HEXFET Power
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91747C
IRF7807/IRF7807A
IRF7807
Device52-7105
10BQ040
IRF7807A
power supply with mosfet dm 100
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Untitled
Abstract: No abstract text available
Text: PD-95210 IRF7807VPbF • • • • HEXFET Power MOSFET N Channel Application Specific MOSFET Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses 100% RG Tested Lead-Free Description This new device employs advanced HEXFET Power
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PD-95210
IRF7807VPbF
IRF7807V
EIA-481
EIA-541.
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t428
Abstract: t428 diode t428 fet IRF7807 t428 24v 10BQ040 IRF7807A FET MARKING
Text: PD – 91747C IRF7807/IRF7807A HEXFET Chip-Set for DC-DC Converters • • • • N Channel Application Specific MOSFETs Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses Description These new devices employ advanced HEXFET Power
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91747C
IRF7807/IRF7807A
IRF7807
Device52-7105
t428
t428 diode
t428 fet
t428 24v
10BQ040
IRF7807A
FET MARKING
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P 838 X MOSFET
Abstract: power mosfet so8 FL 10BQ040 IRF7805 IRF7805A 9936 mosfet IR power mosfet switching power supply TR2020
Text: PD – 91746C IRF7805/IRF7805A HEXFET Chip-Set for DC-DC Converters • • • • N Channel Application Specific MOSFETs Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses Description These new devices employ advanced HEXFET Power
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91746C
IRF7805/IRF7805A
IRF7805/IRF7805A
IRF7805
IRF7805A
P 838 X MOSFET
power mosfet so8 FL
10BQ040
IRF7805A
9936 mosfet
IR power mosfet switching power supply
TR2020
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Untitled
Abstract: No abstract text available
Text: PD – 91747C IRF7807/IRF7807A HEXFET Chip-Set for DC-DC Converters • • • • N Channel Application Specific MOSFETs Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses Description These new devices employ advanced HEXFET Power
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91747C
IRF7807/IRF7807A
IRF7807
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10BQ040
Abstract: IRF7811AV 16VZ
Text: PD-94009 IRF7811AV IRF7811AV • • • • • N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications Description This new device employs advanced HEXFET Power
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PD-94009
IRF7811AV
IRF7811AV
IA-48
10BQ040
16VZ
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10BQ040
Abstract: EIA-541 IRF7101 IRF7807V MS-012AA
Text: PD-95210 IRF7807VPbF • • • • HEXFET Power MOSFET N Channel Application Specific MOSFET Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses 100% RG Tested Lead-Free Description This new device employs advanced HEXFET Power
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PD-95210
IRF7807VPbF
IRF7807V
EIA-481
EIA-541.
10BQ040
EIA-541
IRF7101
MS-012AA
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15A92
Abstract: 11nC
Text: PD-94021 IRLR8103V PROVISIONAL • • • • • N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications D Description This new device employs advanced HEXFET Power
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PD-94021
IRLR8103V
IRLR8103V
15A92
11nC
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IRLR8103V
Abstract: 10BQ040
Text: PD-94021A IRLR8103V • • • • • N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications D Description This new device employs advanced HEXFET Power
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PD-94021A
IRLR8103V
IRLR8103V
combinatio252-7105
10BQ040
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10BQ040
Abstract: EIA-541 IRF7101 IRF7807V MS-012AA
Text: PD-95210 IRF7807VPbF • • • • HEXFET Power MOSFET N Channel Application Specific MOSFET Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses 100% RG Tested Lead-Free Description This new device employs advanced HEXFET Power
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PD-95210
IRF7807VPbF
IRF7807V
EIA-481
EIA-541.
10BQ040
EIA-541
IRF7101
MS-012AA
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ED26 diode
Abstract: 8602 RECTIFIER AN8602 mos Turn-off Thyristor 8602 RECTIFIER 4 PIN P channel 600v 20a IGBT Pelly P channel 600v 30a IGBT applications of mos controlled thyristor INTERSIL 1981
Text: The IGBTs - A New High Conductance MOS-Gated Device Application Note Abstract May 1992 ALUMINUM A new MOS gate-controlled power switch with a very low onresistance is described. The fabrication process is similar to that of an n-channel power MOSFET but employs an n-epitaxial layer grown on a p+ substrate. In operation, the
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AN8602
ED26 diode
8602 RECTIFIER
mos Turn-off Thyristor
8602 RECTIFIER 4 PIN
P channel 600v 20a IGBT
Pelly
P channel 600v 30a IGBT
applications of mos controlled thyristor
INTERSIL 1981
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irf7807pbf
Abstract: 10BQ040 EIA-541 F7101 IRF7101 IRF7807 IRF7807A hexfet pair
Text: PD – 95290 IRF7807PbF IRF7807APbF HEXFET Chip-Set for DC-DC Converters • • • • • N Channel Application Specific MOSFETs Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses Lead-Free Description These new devices employ advanced HEXFET
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IRF7807PbF
IRF7807APbF
IRF7807
EIA-481
EIA-541.
irf7807pbf
10BQ040
EIA-541
F7101
IRF7101
IRF7807A
hexfet pair
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Untitled
Abstract: No abstract text available
Text: PD- 95023 IRF7811WPbF HEXFET Power MOSFET for DC-DC Converters • • • • • N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Lead-Free Description This new device employs advanced HEXFET Power
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IRF7811WPbF
IRF7811W
EIA-481
EIA-541.
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10BQ040
Abstract: EIA-541 F7101 IRF7101
Text: PD – 96031 IRF7805PbF HEXFET Chip-Set for DC-DC Converters • • • • • N Channel Application Specific MOSFETs Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses Lead-Free Description This new device employs advanced HEXFET Power
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IRF7805PbF
IRF7805PbF
EIA-481
EIA-541.
10BQ040
EIA-541
F7101
IRF7101
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transistor equivalent irf510
Abstract: 966a transistor equivalent irf740 irf460a HEXFET III - A new Generation of Power MOSFETs fet irf840 transistor equivalent irf520 IRF83Q AN949A High frequency switching AN-966A
Text: APPLICATION NOTE 966A HEXFET III: A New Generation of Power MOSFETs H EXFET is a tra d e m a rk o f In te rn a tio n a l R ectifie r by D. Grant Introduction International Rectifier has introduc ed a new third-generation of HEXFET power MOSFETs, the HEXFET III.
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irf7105
Abstract: Dual N P-Channel irf7102
Text: International lüRectifier HEXFET Power MOSFETs Surface Mount sn-8 The new SO-8 can accommodate a dual-die configuation, allowing multiple devices to be used in an application with greatly reduced board space. Power dissipation of more than 1W is possible in a typical printed circuit board application. The SO-8 is designed for all soldering techniques.
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IRF7104
IRF7105
IRF7106
IRF7107
Dual N P-Channel
irf7102
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