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    APPLICATION NEW HEXFET Search Results

    APPLICATION NEW HEXFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    C8231A Rochester Electronics LLC Math Coprocessor, 8-Bit, NMOS, CDIP24, DIP-24 Visit Rochester Electronics LLC Buy
    AM79865JC Rochester Electronics LLC Telecom Circuit, Visit Rochester Electronics LLC Buy
    AM79866AJC-G Rochester Electronics LLC SPECIALTY TELECOM CIRCUIT, PQCC20, ROHS COMPLIANT, PLASTIC, LCC-20 Visit Rochester Electronics LLC Buy
    MD8087/R Rochester Electronics LLC Math Coprocessor, CMOS Visit Rochester Electronics LLC Buy
    AM7992BPC Rochester Electronics LLC Manchester Encoder/Decoder, PDIP24, PLASTIC, DIP-24 Visit Rochester Electronics LLC Buy

    APPLICATION NEW HEXFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRFP60A

    Abstract: 40A 45V to-220 Schottky IRF7210 ir*c30ud IRFB9N65 2CWQ03FN IR 200V P-Channel fets IRFIB7N50A CONVERTER IRG4IBC10UD 876-1413
    Text: powireview The Technology Update for People in Power New HEXFET MOSFETs for Every Power Supply Application IR Chip Set First to Meet Newest Notebook PC Power Standard New P-Channel HEXFET® Power MOSFETs Offer Best Performance for Low Voltage Circuits New Schottky Diodes


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    PDF O-220 Q101-Compliant IRFP60A 40A 45V to-220 Schottky IRF7210 ir*c30ud IRFB9N65 2CWQ03FN IR 200V P-Channel fets IRFIB7N50A CONVERTER IRG4IBC10UD 876-1413

    10BQ040

    Abstract: IRF7809A IRF7809AV
    Text: PD-90010 IRF7809AV • • • • • N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications Description This new device employs advanced HEXFET Power


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    PDF PD-90010 IRF7809AV IRF7809AV Cd52-7105 10BQ040 IRF7809A

    LM358 vs LM741

    Abstract: LM324 vs LM741 Wavetek 187 AN-959 AN959 lm358 multimeter LM741 LM324 HEXSENSE LM741 vs. LM324
    Text: AN-959 An Introduction to the HEXSenseTM Current-Sensing Device HEXSense and HEXFET are trademarks of International Rectifier by S. CLEMENTE, H. ISHII, S.YOUNG Introduction This application note will acquaint the designer with International Rectifier's new family of HEXFET power


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    PDF AN-959 LM358 vs LM741 LM324 vs LM741 Wavetek 187 AN-959 AN959 lm358 multimeter LM741 LM324 HEXSENSE LM741 vs. LM324

    10BQ040

    Abstract: IRF7807 IRF7807V
    Text: FOR REVIEW ONLY PD-TBD IRF7807V • • • • N Channel Application Specific MOSFET Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented


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    PDF IRF7807V IRF7807V 10BQ040 IRF7807

    doctor-blade

    Abstract: 150um
    Text: Application Note AN-1011 Assembly of FlipFET Devices by Hazel Schofield and Martin Standing, International Rectifier FlipFET™ is a new generation of HEXFET Power MOSFET package from International Rectifier. FlipFET™ combines the latest die design and wafer


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    PDF AN-1011 doctor-blade 150um

    IRF7811

    Abstract: 10BQ040 IRF7809 93812
    Text: PD - 93812 PD - 93813 IRF7809/IRF7811 IRF7809/IRF7811 Provisional Datasheet • N-Channel Application-Specific MOSFETs HEXFET Chipset for DC-DC Converters • Ideal for CPU Core DC-DC Converters • New CopperStrapTM Interconnect for Lower Electrical and Thermal Resistance


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    PDF IRF7809/IRF7811 IRF7811 10BQ040 IRF7809 93812

    IRF7811

    Abstract: IRF7809 93812 HEXFET SO-8 10BQ040
    Text: PD - 93812 PD - 93813 IRF7809/IRF7811 IRF7809/IRF7811 Provisional Datasheet • N-Channel Application-Specific MOSFETs HEXFET Chipset for DC-DC Converters • Ideal for CPU Core DC-DC Converters • New CopperStrapTM Interconnect for Lower Electrical and Thermal Resistance


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    PDF IRF7809/IRF7811 la252-7105 IRF7811 IRF7809 93812 HEXFET SO-8 10BQ040

    applications of mos controlled thyristor

    Abstract: MOS Controlled Thyristor Semiconductor Power AN-7504 mosfet controlled thyristor mos Turn-off Thyristor P channel 600v 20a IGBT ED26 diode Pelly 10A fast Gate Turn-off Thyristor transistor Ia 15 rca
    Text: The IGBTs - A New High Conductance MOS-Gated Device Application Note Abstract Title N86 bt he BTs w gh ncce OSted vice utho eyrds terrpoon, minctor, er OCI O frk geode May 1992 ALUMINUM A new MOS gate-controlled power switch with a very low onresistance is described. The fabrication process is similar to


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    10BQ040

    Abstract: IRF7807 IRF7807A power supply with mosfet dm 100
    Text: PD – 91747C IRF7807/IRF7807A HEXFET Chip-Set for DC-DC Converters • • • • N Channel Application Specific MOSFETs Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses Description These new devices employ advanced HEXFET Power


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    PDF 91747C IRF7807/IRF7807A IRF7807 Device52-7105 10BQ040 IRF7807A power supply with mosfet dm 100

    Untitled

    Abstract: No abstract text available
    Text: PD-95210 IRF7807VPbF • • • • • • HEXFET Power MOSFET N Channel Application Specific MOSFET Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses 100% RG Tested Lead-Free Description This new device employs advanced HEXFET Power


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    PDF PD-95210 IRF7807VPbF IRF7807V EIA-481 EIA-541.

    t428

    Abstract: t428 diode t428 fet IRF7807 t428 24v 10BQ040 IRF7807A FET MARKING
    Text: PD – 91747C IRF7807/IRF7807A HEXFET Chip-Set for DC-DC Converters • • • • N Channel Application Specific MOSFETs Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses Description These new devices employ advanced HEXFET Power


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    PDF 91747C IRF7807/IRF7807A IRF7807 Device52-7105 t428 t428 diode t428 fet t428 24v 10BQ040 IRF7807A FET MARKING

    P 838 X MOSFET

    Abstract: power mosfet so8 FL 10BQ040 IRF7805 IRF7805A 9936 mosfet IR power mosfet switching power supply TR2020
    Text: PD – 91746C IRF7805/IRF7805A HEXFET Chip-Set for DC-DC Converters • • • • N Channel Application Specific MOSFETs Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses Description These new devices employ advanced HEXFET Power


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    PDF 91746C IRF7805/IRF7805A IRF7805/IRF7805A IRF7805 IRF7805A P 838 X MOSFET power mosfet so8 FL 10BQ040 IRF7805A 9936 mosfet IR power mosfet switching power supply TR2020

    Untitled

    Abstract: No abstract text available
    Text: PD – 91747C IRF7807/IRF7807A HEXFET Chip-Set for DC-DC Converters • • • • N Channel Application Specific MOSFETs Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses Description These new devices employ advanced HEXFET Power


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    PDF 91747C IRF7807/IRF7807A IRF7807

    10BQ040

    Abstract: IRF7811AV 16VZ
    Text: PD-94009 IRF7811AV IRF7811AV • • • • • N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications Description This new device employs advanced HEXFET Power


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    PDF PD-94009 IRF7811AV IRF7811AV IA-48 10BQ040 16VZ

    10BQ040

    Abstract: EIA-541 IRF7101 IRF7807V MS-012AA
    Text: PD-95210 IRF7807VPbF • • • • • • HEXFET Power MOSFET N Channel Application Specific MOSFET Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses 100% RG Tested Lead-Free Description This new device employs advanced HEXFET Power


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    PDF PD-95210 IRF7807VPbF IRF7807V EIA-481 EIA-541. 10BQ040 EIA-541 IRF7101 MS-012AA

    15A92

    Abstract: 11nC
    Text: PD-94021 IRLR8103V PROVISIONAL • • • • • N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications D Description This new device employs advanced HEXFET Power


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    PDF PD-94021 IRLR8103V IRLR8103V 15A92 11nC

    IRLR8103V

    Abstract: 10BQ040
    Text: PD-94021A IRLR8103V • • • • • N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications D Description This new device employs advanced HEXFET Power


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    PDF PD-94021A IRLR8103V IRLR8103V combinatio252-7105 10BQ040

    10BQ040

    Abstract: EIA-541 IRF7101 IRF7807V MS-012AA
    Text: PD-95210 IRF7807VPbF • • • • • • HEXFET Power MOSFET N Channel Application Specific MOSFET Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses 100% RG Tested Lead-Free Description This new device employs advanced HEXFET Power


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    PDF PD-95210 IRF7807VPbF IRF7807V EIA-481 EIA-541. 10BQ040 EIA-541 IRF7101 MS-012AA

    ED26 diode

    Abstract: 8602 RECTIFIER AN8602 mos Turn-off Thyristor 8602 RECTIFIER 4 PIN P channel 600v 20a IGBT Pelly P channel 600v 30a IGBT applications of mos controlled thyristor INTERSIL 1981
    Text: The IGBTs - A New High Conductance MOS-Gated Device Application Note Abstract May 1992 ALUMINUM A new MOS gate-controlled power switch with a very low onresistance is described. The fabrication process is similar to that of an n-channel power MOSFET but employs an n-epitaxial layer grown on a p+ substrate. In operation, the


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    PDF AN8602 ED26 diode 8602 RECTIFIER mos Turn-off Thyristor 8602 RECTIFIER 4 PIN P channel 600v 20a IGBT Pelly P channel 600v 30a IGBT applications of mos controlled thyristor INTERSIL 1981

    irf7807pbf

    Abstract: 10BQ040 EIA-541 F7101 IRF7101 IRF7807 IRF7807A hexfet pair
    Text: PD – 95290 IRF7807PbF IRF7807APbF HEXFET Chip-Set for DC-DC Converters • • • • • N Channel Application Specific MOSFETs Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses Lead-Free Description These new devices employ advanced HEXFET


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    PDF IRF7807PbF IRF7807APbF IRF7807 EIA-481 EIA-541. irf7807pbf 10BQ040 EIA-541 F7101 IRF7101 IRF7807A hexfet pair

    Untitled

    Abstract: No abstract text available
    Text: PD- 95023 IRF7811WPbF HEXFET Power MOSFET for DC-DC Converters • • • • • N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Lead-Free Description This new device employs advanced HEXFET Power


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    PDF IRF7811WPbF IRF7811W EIA-481 EIA-541.

    10BQ040

    Abstract: EIA-541 F7101 IRF7101
    Text: PD – 96031 IRF7805PbF HEXFET Chip-Set for DC-DC Converters • • • • • N Channel Application Specific MOSFETs Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses Lead-Free Description This new device employs advanced HEXFET Power


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    PDF IRF7805PbF IRF7805PbF EIA-481 EIA-541. 10BQ040 EIA-541 F7101 IRF7101

    transistor equivalent irf510

    Abstract: 966a transistor equivalent irf740 irf460a HEXFET III - A new Generation of Power MOSFETs fet irf840 transistor equivalent irf520 IRF83Q AN949A High frequency switching AN-966A
    Text: APPLICATION NOTE 966A HEXFET III: A New Generation of Power MOSFETs H EXFET is a tra d e m a rk o f In te rn a tio n a l R ectifie r by D. Grant Introduction International Rectifier has introduc­ ed a new third-generation of HEXFET power MOSFETs, the HEXFET III.


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    irf7105

    Abstract: Dual N P-Channel irf7102
    Text: International lüRectifier HEXFET Power MOSFETs Surface Mount sn-8 The new SO-8 can accommodate a dual-die configuation, allowing multiple devices to be used in an application with greatly reduced board space. Power dissipation of more than 1W is possible in a typical printed circuit board application. The SO-8 is designed for all soldering techniques.


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    PDF IRF7104 IRF7105 IRF7106 IRF7107 Dual N P-Channel irf7102