NL-604
Abstract: "Rectifier Tube" K490 f90c
Text: RECTIFIER TUBE NL-604 FULL-WAVE RECTIFIER TUBE 2.5 A m peres de ì ';V li t Ü N A TIONAL PO W ER T U B E NL-604 is a sturdy full-wave rectifier tube designed especially for industrial power rectifier application up to 250 volts dc. It is gas and mercury filled for quick starting, long life, and
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NL-604
NL-604L
-f-65Â
K4-90
"Rectifier Tube"
K490
f90c
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precision rectifier
Abstract: AB-108 1377 transistor OP-22
Text: ANALOG ► DEVICES AB-108 APPLICATION BRIEF ONE TECHNOLOGY WAY • P.O. BOX 9106 • NORWOOD, MASSACHUSETTS 02062-9106 • 617/329-4700 A Micropower Single-Supply Precision Rectifier by James Wong This precision full-wave rectifier circuit accepts AC inputs of
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AB-108
320/iA.
V/200k,
V/390k,
100/iA
220/iA
OP-22
320juA.
OP-22
precision rectifier
1377 transistor
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Untitled
Abstract: No abstract text available
Text: 83 PAGE 1 83 Description and Rating FULL-WAVE M E R C U R Y - V A PO H RECTIFIER GENERAL DESCRIPTION Principal Application: wa v e m e r c u r y - v a p o r to supply Cat hode: Heater d-c The 83 is a glass rectifier. current at The t ube essentially .
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ST-16
ET-T464
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Untitled
Abstract: No abstract text available
Text: 1N1183, 1N3765, 1N1183A, 1N2128A Series www.vishay.com Vishay Semiconductors Power Silicon Rectifier Diodes, 35 A, 40 A, 60 A DESCRIPTION/FEATURES • Low leakage current series • Good surge current capability up to 1000 A • Can be supplied to meet stringent military,
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1N1183,
1N3765,
1N1183A,
1N2128A
DO-203AB
1N1183
2002/95/EC.
2002/95/EC
2011/65/EU.
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1N3208
Abstract: 1N3208R 1N3209 1N3210 1N3211 1N3212 1N3213 1N3214 DO-203AB
Text: 1N3208 Series Vishay High Power Products Stud-Mounted Silicon Rectifier Diodes, 15 A DESCRIPTION/FEATURES • Low thermal impedance • High case temperature • Excellent reliability • Maximum design flexibility • Can be made to meet stringent military, aerospace and
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1N3208
DO-203AB
2002/95/EC
11-Mar-11
1N3208R
1N3209
1N3210
1N3211
1N3212
1N3213
1N3214
DO-203AB
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precision FULL WAVE RECTIFIER
Abstract: precision rectifier precision FULL WAVE RECTIFIER supply FULL WAVE RECTIFIER CIRCUITS precision full wave ZXCT1041 ultrasonic movement DETECTOR CIRCUIT DIAGRAM FULL WAVE RECTIFIER and waveforms precision FULL WAVE RECTIFIER datasheet AN39
Text: A Product Line of Diodes Incorporated AN55 ZXCT1041 as a precision full wave rectifier By Peter Abiodun Bode, Snr. Applications Engineer. 5 V - 20 V R2 10 0 k R1 10 0 k C1 In pu t 100m V – 800m V 10 F S+ S- Z X C T 1041 C2 10 μF F lag V OUT GND V OUT
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ZXCT1041
100mV
100mV.
D-81541
TX75248,
precision FULL WAVE RECTIFIER
precision rectifier
precision FULL WAVE RECTIFIER supply
FULL WAVE RECTIFIER CIRCUITS
precision full wave
ultrasonic movement DETECTOR CIRCUIT DIAGRAM
FULL WAVE RECTIFIER and waveforms
precision FULL WAVE RECTIFIER datasheet
AN39
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microcontroller base rectifier using scr
Abstract: AN10384 TRIAC power control circuit full wave triac speed controller TO92 triac how to calculate junction to ambient thermal resistance Triac application note drill motor speed control circuit refrigerator thermostat to220 mica
Text: AN10384 Triacs: How to calculate power and predict Tjmax Rev. 01 — 10 August 2005 Application note Document information Info Content Keywords Triac, Silicon Controlled Rectifier, power, thermal resistance, heatsink, Tjmax, knee voltage, slope resistance
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AN10384
microcontroller base rectifier using scr
AN10384
TRIAC power control circuit
full wave triac speed controller
TO92 triac
how to calculate junction to ambient thermal resistance
Triac application note
drill motor speed control circuit
refrigerator thermostat
to220 mica
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FD1000FX-90
Abstract: No abstract text available
Text: MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES FD1000FX-90 HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE OUTLINE DRAWING FD1000FX-90 Dimensions in mm 9 15° 5 R4 φ 60 TYPE NAME ANODE 0.4 MIN 21 ± 0.5 CATHODE ● IF AV Average forward current .800A
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FD1000FX-90
FD1000FX-90
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1000uC
Abstract: application FULL WAVE RECTIFIER FD1000FH-56 S10-27 high power rectification diodes
Text: MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES FD1000FH-56 HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE OUTLINE DRAWING FD1000FH-56 Dimensions in mm R4 15° 5 9 φ 50 TYPE NAME ANODE 0.4 MIN 21 ± 0.5 CATHODE ● IF AV Average forward current .1000A
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FD1000FH-56
1000uC
application FULL WAVE RECTIFIER
FD1000FH-56
S10-27
high power rectification diodes
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application FULL WAVE RECTIFIER
Abstract: FD2000DU-120
Text: MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES FD2000DU-120 HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE FD2000DU-120 OUTLINE DRAWING Dimension in mm φ 3.6 ± 0.2 DEPTH 2.2 ± 0.2 φ 130 ± 0.2 ● IF AV Average forward current .1700A ● VRRM Repetitive peak reverse voltage .6000V
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FD2000DU-120
application FULL WAVE RECTIFIER
FD2000DU-120
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FD1000FV-90
Abstract: full wave rectifier diodes S10-27
Text: MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES FD1000FV-90 HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE OUTLINE DRAWING FD1000FV-90 Dimensions in mm 9 15° 5 R4 φ 60 TYPE NAME ANODE 0.4 MIN 21 ± 0.5 CATHODE ● IF AV Average forward current .800A
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FD1000FV-90
FD1000FV-90
full wave rectifier diodes
S10-27
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full wave rectifier diodes
Abstract: FD1500AV-90
Text: MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES FD1500AV-90 HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE OUTLINE DRAWING FD1500AV-90 Dimensions in mm 6.3 15° 9 ¶40 ANODE φ 70 φ 120 MAX 26 ± 0.5 TYPE NAME 0.4 MIN φ 70 CATHODE ● IF AV Average forward current .1500A
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FD1500AV-90
full wave rectifier diodes
FD1500AV-90
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Untitled
Abstract: No abstract text available
Text: 1N3208 Series www.vishay.com Vishay Semiconductors Silicon Rectifier Diodes, Stud Version 15 A FEATURES • Low thermal impedance • High case temperature • Excellent reliability • Maximum design flexibility • Can be made to meet stringent military, aerospace and
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1N3208
DO-203AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES FD1500AV-90 HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE FD1500AV-90 • lF AV Average forw ard c u rre n t. 1500A • V rrm Repetitive peak reverse voltage • Q rr Reverse recovery c h a rg e . 2000|iC
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FD1500AV-90
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U10A3CIC
Abstract: application FULL WAVE RECTIFIER U10A3
Text: SEMICONDUCTOR U10A3CIC TECHNICAL DATA ULTRA FAST RECOVERY RECTIFIER DIODE SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION. A C P FEATURES B E G Ultra-Fast Recovery Time for High Efficiency. Low Forward Voltage Drop, High Current Capability,
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U10A3CIC
60MHz
50MHz
U10A3CIC
application FULL WAVE RECTIFIER
U10A3
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Untitled
Abstract: No abstract text available
Text: TYN16X-800RT SCR 19 July 2012 Product data sheet 1. Product profile 1.1 General description Planar passivated Silicon Controlled Rectifier SCR in a SOT186A (TO-220F) "full pack" plastic package intended for use in applications requiring very high inrush current
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TYN16X-800RT
OT186A
O-220F)
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES FD1000FX-90 HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE OUTLINE DRAWING FD1000FX-90 ' « * lF AV Average forw ard c u rre n t. .800A • V rrm Repetitive peak reverse voltage. . 4500V
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FD1000FX-90
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Untitled
Abstract: No abstract text available
Text: TYN20X-800T SCR 23 July 2012 Product data sheet 1. Product profile 1.1 General description Planar passivated Silicon Controlled Rectifier SCR in a SOT186A (TO-220F) "full pack" plastic package intended for use in applications requiring very high inrush current
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TYN20X-800T
OT186A
O-220F)
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1N3208
Abstract: 1N3208R 1N3209 1N3209R 1N3210 1N3211 1N3212 1N3213 1N3214 DO-203AB
Text: 1N3208 Series Vishay High Power Products Stud-Mounted Silicon Rectifier Diodes, 15 A DESCRIPTION/FEATURES • Low thermal impedance RoHS • High case temperature COMPLIANT • Excellent reliability • Maximum design flexibility • Can be made to meet stringent military, aerospace and
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1N3208
DO-203AB
18-Jul-08
1N3208R
1N3209
1N3209R
1N3210
1N3211
1N3212
1N3213
1N3214
DO-203AB
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1N3209
Abstract: 1N3208 1N3208R 1N3210 1N3211 1N3212 1N3213 1N3214 DO-203AB
Text: 1N3208 Series Vishay High Power Products Stud-Mounted Silicon Rectifier Diodes, 15 A DESCRIPTION/FEATURES • Low thermal impedance • High case temperature • Excellent reliability • Maximum design flexibility • Can be made to meet stringent military, aerospace and
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1N3208
DO-203AB
2002/95/EC
18-Jul-08
1N3209
1N3208R
1N3210
1N3211
1N3212
1N3213
1N3214
DO-203AB
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C122B1G
Abstract: C122B1 C122F1 C122F1G fire angle of scr circuit
Text: C122F1, C122B1 Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for full-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half−wave silicon gate−controlled, solid−state devices are needed.
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C122F1,
C122B1
C122F1/D
C122B1G
C122B1
C122F1
C122F1G
fire angle of scr circuit
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C122F1G
Abstract: C122F1
Text: C122F1G Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for full-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half−wave silicon gate−controlled, solid−state devices are needed.
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C122F1G
C122F1/D
C122F1G
C122F1
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scr 106 dg
Abstract: SCR 103 cdi ignition circuit capacitive discharge ignition 800R cdi ignition
Text: BT151X-800R SCR 24 July 2012 Product data sheet 1. Product profile 1.1 General description Planar passivated Silicon Controlled Rectifier SCR in a SOT186A (TO-220F) "full pack" plastic package intended for use in applications requiring high bidirectional blocking
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BT151X-800R
OT186A
O-220F)
scr 106 dg
SCR 103
cdi ignition circuit
capacitive discharge ignition
800R
cdi ignition
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Untitled
Abstract: No abstract text available
Text: TO -2 20F BT151X-800C SCR 16 March 2014 Product data sheet 1. General description Planar passivated Silicon Controlled Rectifier SCR in a SOT186A (TO-220F) "full pack" plastic package intended for use in applications requiring high bidirectional blocking
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BT151X-800C
OT186A
O-220F)
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