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    Abstract: No abstract text available
    Text: APM2101SG P-Channel Enhancement Mode MOSFET Pin Description Features • D -20V/-3.5A, D D RDS ON = 48mΩ(typ.) @ VGS= -4.5V D RDS(ON)= 75mΩ(typ.) @ VGS= -2.5V G RDS(ON)= 135mΩ(typ.) @ VGS= -1.8V • • • S Super High Dense Cell Design S S Reliable and Rugged


    Original     		PDF APM2101SG -20V/-3 JSC70-8 APM2101 MIL-STD-883D-2003 883D-1005 JESD-22-B, 883D-1011

    APM2101

    Abstract: APM2101SG STD-020C apm21
    Text: APM2101SG P-Channel Enhancement Mode MOSFET Pin Description Features • D -20V/-3.5A, D D RDS ON = 48mΩ(typ.) @ VGS= -4.5V D RDS(ON)= 75mΩ(typ.) @ VGS= -2.5V G RDS(ON)= 135mΩ(typ.) @ VGS= -1.8V • • • S Super High Dense Cell Design S S Reliable and Rugged


    Original     		PDF APM2101SG -20V/-3 JSC70-8 APM2101 MIL-STD-883D-2003 883D-1005 JESD-22-B, 883D-1011 APM2101 APM2101SG STD-020C apm21