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    Abstract: No abstract text available
    Text: AP9T18GEH/J Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ G-S Diode embedded D G ▼ Capable of 2.5V gate drive BVDSS 20V RDS ON 14mΩ ID ▼ Surface mount package ▼ RoHS Compliant 40A S Description


    Original     		PDF AP9T18GEH/J O-252 O-251 100us 100ms ap9t18geh

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    Abstract: No abstract text available
    Text: AP9T18GEH/J Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET G-S Diode embedded D G Capable of 2.5V gate drive BVDSS RDS ON ID Surface mount package RoHS Compliant 20V 14m 40A S Description The Advanced Power MOSFETs from APEC provide the


    Original     		PDF AP9T18GEH/J O-252 O-251 100us 100ms