AP9997GH
Abstract: AP9997 AP9997GJ
Text: AP9997GH/J-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower Gate Charge ▼ Fast Switching Characteristic 100V RDS ON 120mΩ ID G ▼ RoHS Compliant & Halogen-Free BVDSS
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9997GH
Abstract: AP9997GH
Text: Advanced Power Electronics Corp. AP9997GH/J-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D Fast Switching Characteristic BV DSS R DS ON Lower Gate Charge G RoHS-compliant, halogen-free 100V 120mΩ ID 11A S Description D (tab) G Advanced Power MOSFETs from APEC provide the designer with the best
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9997GJ
9997GH
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AP9997GH
Abstract: AP9997
Text: AP9997GH/J RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower Gate Charge ▼ Fast Switching Characteristic BVDSS 100V RDS ON 120mΩ ID G 11A S Description G Advanced Power MOSFETs from APEC provide the
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AP9997
Abstract: No abstract text available
Text: AP9997GH/J-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement BVDSS D 100V RDS ON Lower Gate Charge Fast Switching Characteristic ID G RoHS Compliant & Halogen-Free 120m 11A S Description
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Original
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