Untitled
Abstract: No abstract text available
Text: AP9575GH/J-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower Gate Charge BVDSS D -60V RDS ON Simple Drive Requirement Fast Switching Characteristic 90m ID G -15A RoHS Compliant S Description G The TO-252 package is widely preferred for commercial-industrial
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AP9575GH/J-HF
O-252
AP9575GJ)
O-251
100us
100ms
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Untitled
Abstract: No abstract text available
Text: AP9575GH/J RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower Gate Charge BVDSS D -60V RDS ON Simple Drive Requirement Fast Switching Characteristic 90m ID G -15A S Description G D The TO-252 package is widely preferred for commercial-industrial
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AP9575GH/J
O-252
AP9575GJ)
O-251
100us
100ms
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9575gh
Abstract: 9575GJ marking 9575GH AP9575GH marking codes transistors SSs AP9575GJ PDTC* MARKING CODE PART MARKING 9A 450E3
Text: AP9575GH/J RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic BVDSS -60V RDS ON 90mΩ ID G -15A S Description G The TO-252 package is widely preferred for commercial-industrial
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AP9575GH/J
O-252
AP9575GJ)
O-251
O-251
9575GJ
9575gh
9575GJ
marking 9575GH
AP9575GH
marking codes transistors SSs
AP9575GJ
PDTC* MARKING CODE
PART MARKING 9A
450E3
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AP9575GH
Abstract: AP9575GJ ap9575
Text: AP9575GH/J RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic BVDSS -60V RDS ON 90mΩ ID G -15A S Description G D The TO-252 package is widely preferred for commercial-industrial
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AP9575GH/J
O-252
AP9575GJ)
O-251
100us
100ms
AP9575GH
AP9575GJ
ap9575
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9575GH
Abstract: No abstract text available
Text: AP9575GH/J RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower Gate Charge D BVDSS -60V RDS ON Simple Drive Requirement Fast Switching Characteristic 90m ID G -15A S Description G The TO-252 package is widely preferred for commercial-industrial
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Original
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AP9575GH/J
O-252
AP9575GJ)
O-251
O-251
9575GJ
9575GH
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AP9575GH
Abstract: AP9575GJ
Text: AP9575GH/J-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic -60V RDS ON 90mΩ ID G ▼ RoHS Compliant BVDSS -15A S Description
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AP9575GH/J-HF
O-252
AP9575GJ)
O-251
100us
100ms
AP9575GH
AP9575GJ
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9575gh
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP9575GH/J-HF-3 P-channel Enhancement-mode Power MOSFET Low Gate Charge D Simple Drive Requirement BV DSS Fast Switching Characteristic RDS ON G RoHS-compliant, halogen-free -60V 90mΩ ID -15A S Description D (tab) Advanced Power MOSFETs from APEC provide the designer with the best
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AP9575GH/J-HF-3
AP9575GH-HF-3
O-252
AP9575GJ-HF-3
O-251
AP9575
9575GJ
O-251
9575gh
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AP9575GH
Abstract: AP9575GJ
Text: AP9575GH/J Pb Free Plating Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On-resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic BVDSS -60V RDS ON 90mΩ ID G -15A S Description G D The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
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AP9575GH/J
O-252
AP9575GJ)
O-251
100us
100ms
AP9575GH
AP9575GJ
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