DT28F016SA
Abstract: DD28F032SA 28F008SA 28F016SA 28F016SV 28F032SA 28F008SA-Compatible
Text: E 28F016SA 16-MBIT 1 MBIT X 16, 2 MBIT X 8 FlashFile MEMORY Includes Commercial and Extended Temperature Specifications n n n n n n n User-Selectable 3.3V or 5V V CC n User-Configurable x8 or x16 Operation 70 ns Maximum Access Time 28.6 MB/sec Burst Write Transfer Rate
|
Original
|
PDF
|
28F016SA
16-MBIT
56-Lead,
28F008SA
16-MbF016SA,
28F016SV,
28F016XS,
28F016XD
DT28F016SA
DD28F032SA
28F008SA
28F016SV
28F032SA
28F008SA-Compatible
|
28F016SA
Abstract: 28F016SV 28F160S3 28F160S5 28F320S3
Text: E ADVANCE INFORMATION WORD-WIDE FlashFile MEMORY FAMILY 28F160S3, 28F320S3 Includes Extended Temperature Specifications n n n n n n Two 32-Byte Write Buffers 2.7 µs per Byte Effective Programming Time Low Voltage Operation 2.7 V or 3.3 V V CC 2.7 V, 3.3 V or 5 V V PP
|
Original
|
PDF
|
28F160S3,
28F320S3
32-Byte
64-Kbyte
SC16SV
28F016SA
AP-607
AP-610
28F016SA
28F016SV
28F160S3
28F160S5
28F320S3
|
28F016SA
Abstract: 28F016SV 28F160S3 28F160S5 28F320S3 TSOP 56 LAYOUT CG-041493 32MB SIMM
Text: E ADVANCE INFORMATION WORD-WIDE FlashFile MEMORY FAMILY 28F160S3, 28F320S3 Includes Extended Temperature Specifications n n n n n n Two 32-Byte Write Buffers 2.7 µs per Byte Effective Programming Time Low Voltage Operation 2.7 V or 3.3 V V CC 2.7 V, 3.3 V or 5 V V PP
|
Original
|
PDF
|
28F160S3,
28F320S3
32-Byte
64-Kbyte
SC16SV
28F016SA
AP-607
AP-610
28F016SA
28F016SV
28F160S3
28F160S5
28F320S3
TSOP 56 LAYOUT
CG-041493
32MB SIMM
|
PLCC 32 intel package dimensions
Abstract: 845 bios chip intel 845 circuit diagram all chip TSOP 48 thermal resistance TSOP 48 LAYOUT ap623 am 28f040 AP-623 PCB Layout tsop 48 PIN SOCKET
Text: E AP-623 APPLICATION NOTE Multi-Site Layout Planning with Intel’s Boot Block Flash Memory December 1996 Order Number: 292178-003 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions of
|
Original
|
PDF
|
AP-623
AP-607
AB-57
AB-60
PLCC 32 intel package dimensions
845 bios chip
intel 845 circuit diagram all chip
TSOP 48 thermal resistance
TSOP 48 LAYOUT
ap623
am 28f040
AP-623
PCB Layout
tsop 48 PIN SOCKET
|
28F008SA
Abstract: 28F016SA 28F320J5 28F640J5 DD28F032SA NS480
Text: E SEE NEW DESIGN RECOMMENDATIONS REFERENCE ONLY 32-MBIT FlashFile MEMORY DD28F032SA n n n n n n n User-Selectable 3.3 V or 5 V V CC n User-Configurable x8 or x16 Operation 70 ns Maximum Access Time 28.6 MB/sec Burst Write Transfer Rate 1 Million Typical Erase Cycles per Block
|
Original
|
PDF
|
32-MBIT
DD28F032SA
56-Lead,
28F016SA
DD28F032SA
28F008SA
AP-377
16-Mbit
28F016SA,
28F016SA
28F320J5
28F640J5
NS480
|
DT28F320S5-90
Abstract: DT28F160S5-70 28F016SA 28F016SV 28F160S3 28F160S5 28F320S5 DT28F320S5-110 DT28F320S5 cfi commands
Text: E PRELIMINARY 5 VOLT FlashFile MEMORY 28F160S5 and 28F320S5 x8/x16 n n n n n n Two 32-Byte Write Buffers 2 µs per Byte Effective Programming Time Operating Voltage 5 V VCC 5 V VPP n n 70 ns Read Access Time (16 Mbit) 90 ns Read Access Time (32 Mbit)
|
Original
|
PDF
|
28F160S5
28F320S5
x8/x16)
32-Byte
64-Kbyte
AP-393
28F016SV
28F016SA
AP-607
DT28F320S5-90
DT28F160S5-70
28F016SA
28F160S3
28F320S5
DT28F320S5-110
DT28F320S5
cfi commands
|
28F008SA
Abstract: 28F016SA 28F320J5 28F640J5 DD28F032SA BSR4 equivalent 28F64
Text: E SEE NEW DESIGN RECOMMENDATIONS REFERENCE ONLY 32-MBIT FlashFile MEMORY DD28F032SA n n n n n n n User-Selectable 3.3 V or 5 V V CC n User-Configurable x8 or x16 Operation 70 ns Maximum Access Time 28.6 MB/sec Burst Write Transfer Rate 1 Million Typical Erase Cycles per Block
|
Original
|
PDF
|
32-MBIT
DD28F032SA
56-Lead,
28F016SA
DD28F032SA
28F008SA
AP-377
16-Mbit
28F016SA,
28F016SA
28F320J5
28F640J5
BSR4 equivalent
28F64
|
diode A14A
Abstract: BIOS 32 Pin PLCC 845 bios chip PLCC 32 intel package dimensions amd 29f040 thermal resistance INTEL FLASH MEMORY DATA SHEET transistor ap 431 tsop 28-LEAD Footprints picture in picture chip psop 1
Text: E AP-623 APPLICATION NOTE Multi-Site Layout Planning with Intel's Boot Block Flash Memory CHARLES ANYIMI SENIOR TECHNICAL MARKETING ENGINEER December 1995 Order Number: 292178-002 Information in this document is provided solely to enable use of Intel products. Intel assumes no liability whatsoever, including
|
Original
|
PDF
|
AP-623
AP-607,
AB-57,
AB-60,
diode A14A
BIOS 32 Pin PLCC
845 bios chip
PLCC 32 intel package dimensions
amd 29f040 thermal resistance
INTEL FLASH MEMORY DATA SHEET
transistor ap 431
tsop 28-LEAD Footprints
picture in picture chip
psop 1
|
28F008SA
Abstract: 28F016SA DD28F032SA intel DOC
Text: E PRELIMINARY DD28F032SA 32-MBIT 2 MBIT X 16, 4 MBIT X 8 FlashFile MEMORY User-Selectable 3.3V or 5V VCC User-Configurable x8 or x16 Operation 70 ns Maximum Access Time 28.6 MB/sec Burst Write Transfer Rate Revolutionary Architecture 100% Backwards-Compatible with
|
Original
|
PDF
|
DD28F032SA
32-MBIT
28F016SA
56-Lead,
DD28F032SA
32-Mbit
28F008SA
28F016SA
intel DOC
|
28F008SA
Abstract: 28F016SA DD28F032SA
Text: E n n n n n n n DD28F032SA 32-MBIT 2 MBIT X 16, 4 MBIT X 8 FlashFile MEMORY User-Selectable 3.3V or 5V V CC n User-Configurable x8 or x16 Operation 70 ns Maximum Access Time 28.6 MB/sec Burst Write Transfer Rate 1 Million Typical Erase Cycles per Block
|
Original
|
PDF
|
DD28F032SA
32-MBIT
56-Lead,
28F016SA
DD28F032SA
32-Mbit
AP-393
28F016SV
28F008SA
28F016SA
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY 5 VOLT FlashFile MEMORY 28F160S5 and 28F320S5 x8/x16 Two 32-Byte Write Buffers — 2 \is per Byte Effective Programming Time Operating Voltage 5 V Vcc — — 5 V V pp 70 ns Read Access Time (16 Mbit) 90 ns Read Access Time (32 Mbit) High-Density Symmetrically-Blocked
|
OCR Scan
|
PDF
|
28F160S5
28F320S5
x8/x16)
32-Byte
64-Kbyte
28F016SV
28F016SA
AP-607
|
DD28F032SA
Abstract: No abstract text available
Text: REFERENCE ONLY 32-MBIT FlashFile MEMORY DD28F032SA • User-Selectable 3.3 V or 5 V Vcc ■ User-Configurable x8 or xt6 Operation ■ 70 ns Maximum Access Time ■ 28.6 MB/sec Burst Write Transfer Rate ■ 1 Million Typical Erase Cycles per Block ■ 56-Lead, 1.2 x 14 x 20 mm Advanced
|
OCR Scan
|
PDF
|
32-MBIT
DD28F032SA
56-Lead,
28F016SA
DD28F032SA
16-Mbit
28F008SA
AP-377
|
DT28F016SV080
Abstract: No abstract text available
Text: in t e i 16-MBIT Flash File MEMORY 28F016SV Includes Commercial and Extended Temperature Specifications • Sm artVoltage Techn o logy — U ser-Selectab le 3.3 V or 5 V V c c — U ser-Selectab le 5 V or 12 V V PP ■ Backw ards-Com patible with 28F016SA ,
|
OCR Scan
|
PDF
|
16-MBIT
28F016SV
56-Lead
28F016SA
28F008SA
AP-610
AB-62
DT28F016SV080
|
160S5
Abstract: e28f160s5-70 IR3637 28F016SA 28F016SV 28F160S3 28F160S5 28F320S5 A0-A21 297372
Text: irrtel, ADVANCE INFORMATION WORD-WIDE FlashFile MEMORY FAMILY 28F160S5, 28F320S5 Includes Extended Temperature Specifications Two 32-Byte Write Buffers — 2 jxs per Byte Effective Programming Time Operating Voltage Cross-Compatible Command Support — Intel Standard Command Set
|
OCR Scan
|
PDF
|
28F160S5,
28F320S5
32-Byte
64-Kbyte
AP-374
AP-39328F016S
28F016SA
AP-607Multi-Site
AP-610
160S5
e28f160s5-70
IR3637
28F016SA
28F016SV
28F160S3
28F160S5
28F320S5
A0-A21
297372
|
|
297372
Abstract: No abstract text available
Text: 28F016SV • SmartVoltage Technology — User-Selectable 3.3V or 5V Vcc — U s er-S electa b le 5 V o r 12V V PP ■ 65 ns Access Time ■ 1 Million Erase Cycles per Block ■ 30.8 MB/sec Burst Write Transfer Rate ■ Backwards-Compatible with 28F016SA, 28F008SA Command Set
|
OCR Scan
|
PDF
|
28F016SV
56-Lead
28F016SA,
28F008SA
28F016SV
16-Mbit
297372
|
ap393 "pin compatible"
Abstract: 297372
Text: 28F016SV • SmartVoltage Technology — User-Selectable 3.3V or 5V Vcc — User-Selectable 5V or 12V Vpp ■ 65 ns Access Time ■ 1 Million Erase Cycles per Block ■ 30.8 MB/sec Burst Write Transfer Rato ■ Backwards-Compatible with 28F016SA, 28F008SA Command Set
|
OCR Scan
|
PDF
|
28F016SV
56-Lead
28F016SA,
28F008SA
28F016SV
16-Mbit
ap393 "pin compatible"
297372
|
Untitled
Abstract: No abstract text available
Text: 28F016SV • SmartVoltage Technology — User-Selectable 3.3V or 5V Vcc — User-Selectable 5V or 12V VPP ■ Backwards-Compatible with 28F016SA, 28F008SA Command Set ■ 65 ns Access Time ■ 1 Million Erase Cycles per Block ■ 30.8 MB/sec Burst Write Transfer Rate
|
OCR Scan
|
PDF
|
28F016SV
56-Lead
28F016SA,
28F008SA
28F016SV
16-Mbit
|
TE28F160S5-70
Abstract: 29048 dt28f160s570 290609-003
Text: WORD-WIDE FlashFile MEMORY FAMILY 28F160S5, 28F320S5 Includes Extended Temperature Specifications • ■ ■ Cross-Compatible Command Support Tw o 32-Byte Write Butters — 2 ¡as per Byte Effective Program m ing Tim e — Intel Standard Com m and Set
|
OCR Scan
|
PDF
|
28F160S5,
28F320S5
32-Byte
64-Kbyte
AP-374
AP-393
28F016SV
28F016SA
AP-607
TE28F160S5-70
29048
dt28f160s570
290609-003
|
Untitled
Abstract: No abstract text available
Text: in te i 28F016SV 16-MBIT 1 MBIT x 16,2 MBIT x 8 FlashFileTM MEMORY SmartVoltage Technology — User-Selectable 3.3V or 5V Vqc - U ser-Selectable 5V or 12V Vpp 65 ns Access Time 1 Million Erase Cycles per Block 30.8 MB/sec Burst Write Transfer Rate 0.48 MB/sec Sustainable Write Transfer
|
OCR Scan
|
PDF
|
28F016SV
16-MBIT
56-Lead
28F016SA,
28F008SA
28F008SA
28F016SV
AP-610
AB-62
ER-33
|
Untitled
Abstract: No abstract text available
Text: 28F016SA The BYTE# pin allows either x8 or x16 read/writes to the 28F016SA. BYTE# at logic low selects 8-bit mode with address Ao selecting between low byte and high byte. On the other hand, BYTE# at logic high enables 16-bit operation with address Ai becoming the lowest order address and address
|
OCR Scan
|
PDF
|
28F016SA
28F016SA.
16-bit
28F016SA
28F008SA
28F008SA-based
16-Mbit
|
Untitled
Abstract: No abstract text available
Text: in te l P R S U IM IO IiQ A Ifflf 28F016SA 16-MBIT 1 MBIT x 16, 2 MBIT x 8 FlashFile MEMORY • ■ ■ ■ ■ User-Selectable 3.3V or 5V Vcc ■ Revolutionary Architecture User-Configurable x8 or x16 Operation — Pipelined Command Execution 70 ns Maximum Access Time
|
OCR Scan
|
PDF
|
28F016SA
16-MBIT
56-Lead,
16-Mbit
MfiSbl75
|
Untitled
Abstract: No abstract text available
Text: P R iy if flD I iO M Ÿ in te i EXTENDED TEMPERATURE 28F016SA 16-MBIT 1 MBIT x 16, 2 MBIT x 8 FlashFileTM MEMORY Extended Temperature Operation 40°C to +85°C User-Selectable 3.3V or 5V Vcc , „ , . „ User-Configurable x8 or x16 Operation 100 ns Maximum Access Time at 5V
|
OCR Scan
|
PDF
|
28F016SA
16-MBIT
56-Lead
28F008SA
28F016SA
16-Mbit
|
DT28F016SA
Abstract: E28F016SA-070 BSR5
Text: 28F016SA 16-MBIT 1 MBIT X 16, 2 MBIT X 8 FlashFile MEMORY Includes Commercial and Extended Temperature Specifications • User-Selectable 3.3V or 5V Vcc ■ User-Configurable x8 or x16 Operation ■ Revolutionary Architecture — Pipelined Command Execution
|
OCR Scan
|
PDF
|
28F016SA
16-MBIT
56-Lead,
28F008SA
16-Mbit
AP-377
28F016SA,
DT28F016SA
E28F016SA-070
BSR5
|
AP607
Abstract: 29057 28F008SA
Text: intei A O m K K S l 0M F K ( S S l Ä 7 D@Cifl 28F016SV 16-MBIT (1 MBIT x 16,2 MBIT x 8 FlashFileTM MEMORY • SmartVoltage Technology — User-Selectable 3.3V or 5V Vcc — User-Selectable 5V or 12V Vpp ■ 65 ns Access Time ■ 1 Million Erase Cycles per Block
|
OCR Scan
|
PDF
|
28F016SV
16-MBIT
28F016SA,
28F008SA
58-Lead
F016SV/28F016XS/28F016XD"
AP-378
28F016SA"
AP-393
AP607
29057
|