AP30G120SW Search Results

AP30G120SW Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
AP30G120SW		Advanced Power Electronics	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD		Original	PDF
AP30G120SW		Alpha & Omega Semiconductor	N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD		Original	PDF

AP30G120SW Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: AP30G120SW RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD. Features ▼ High Speed Switching VCES ▼ Low Saturation Voltage V CE sat =3.0V@IC=30A ▼ CO-PAK, IGBT With FRD ▼ RoHS Complian IC	Original	PDF	AP30G120SW Fig11.
Untitled Abstract: No abstract text available Text: Advanced Power Electronics Corp. AP30G120SW-HF-3 N-Channel Insulated Gate Bipolar Power Transistor High Speed Switching V CES 1200V Low Saturation Voltage C tab 30A IC Typical VCE(sat)= 3.0V at IC=30A G Internal "Co-Pak" Fast Recovery Diode C C RoHS-compliant, halogen-free TO-3P package	Original	PDF	AP30G120SW-HF-3 AP30G120S 30G120SW
AP30G120SW Abstract: AP30G120 ictc 500V N-Channel IGBT TO-3P Text: AP30G120SW Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD. Features ▼ High speed switching VCES ▼ Low Saturation Voltage VCE sat =3.0V@IC=30A IC 1200V 30A C ▼ CO-PAK, IGBT with FRD ▼ RoHS Compliant	Original	PDF	AP30G120SW Fig11. AP30G120SW AP30G120 ictc 500V N-Channel IGBT TO-3P
Untitled Abstract: No abstract text available Text: AP30G120SW Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD. Features High speed switching VCES Low Saturation Voltage VCE sat =3.0V@IC=30A IC 1200V 30A C CO-PAK, IGBT with FRD RoHS Compliant G C	Original	PDF	AP30G120SW Fig11.