Untitled
Abstract: No abstract text available
Text: AP30G120CSW-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD. Features ▼ High Speed Switching VCES ▼ Low Saturation Voltage VCE sat =2.9V@IC=30A ▼ CO-PAK, IGBT With FRD ▼ RoHS Compliant & Halogen-Free
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AP30G120CSW-HF
Fig11.
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Untitled
Abstract: No abstract text available
Text: AP30G120BSW-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD. Features ▼ High Speed Switching VCES ▼ Low Saturation Voltage VCE sat =2.9V@IC=30A ▼ CO-PAK, IGBT With FRD ▼ RoHS Compliant & Halogen-Free
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AP30G120BSW-HF
Fig11.
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Untitled
Abstract: No abstract text available
Text: AP30G120SW RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD. Features ▼ High Speed Switching VCES ▼ Low Saturation Voltage V CE sat =3.0V@IC=30A ▼ CO-PAK, IGBT With FRD ▼ RoHS Complian IC
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AP30G120SW
Fig11.
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Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP30G120SW-HF-3 N-Channel Insulated Gate Bipolar Power Transistor High Speed Switching V CES 1200V Low Saturation Voltage C tab 30A IC Typical VCE(sat)= 3.0V at IC=30A G Internal "Co-Pak" Fast Recovery Diode C C RoHS-compliant, halogen-free TO-3P package
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AP30G120SW-HF-3
AP30G120S
30G120SW
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AP30G120SW
Abstract: AP30G120 ictc 500V N-Channel IGBT TO-3P
Text: AP30G120SW Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD. Features ▼ High speed switching VCES ▼ Low Saturation Voltage VCE sat =3.0V@IC=30A IC 1200V 30A C ▼ CO-PAK, IGBT with FRD ▼ RoHS Compliant
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AP30G120SW
Fig11.
AP30G120SW
AP30G120
ictc
500V N-Channel IGBT TO-3P
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Untitled
Abstract: No abstract text available
Text: AP30G120W Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features 1100V VCES High speed switching Low Saturation Voltage VCE sat =3.0V@IC=30A Industry Standard TO-3P Package 30A IC C G RoHS Compliant C
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AP30G120W
Fig11.
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Untitled
Abstract: No abstract text available
Text: AP30G120CSW-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD. Features High Speed Switching VCES Low Saturation Voltage VCE sat =2.9V@IC=30A CO-PAK, IGBT With FRD RoHS Compliant & Halogen-Free IC
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AP30G120CSW-HF
Fig11.
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Untitled
Abstract: No abstract text available
Text: AP30G120SW Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD. Features High speed switching VCES Low Saturation Voltage VCE sat =3.0V@IC=30A IC 1200V 30A C CO-PAK, IGBT with FRD RoHS Compliant G C
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AP30G120SW
Fig11.
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Untitled
Abstract: No abstract text available
Text: AP30G120ASW RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD. Features High Speed Switching VCES Low Saturation Voltage V CE sat =2.9V@IC=30A CO-PAK, IGBT With FRD RoHS Compliant IC 1200V 30A C C
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AP30G120ASW
Fig11.
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v120t
Abstract: AP30G120W
Text: AP30G120W Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features VCES 1200V IC ▼ High speed switching ▼ Low Saturation Voltage VCE sat =3.0V@IC=30A ▼ Industry Standard TO-3P Package 30A C G ▼ RoHS Compliant
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AP30G120W
Fig11.
v120t
AP30G120W
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ap30g120w
Abstract: No abstract text available
Text: AP30G120W Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features VCES 1100V 30A IC ▼ High speed switching ▼ Low Saturation Voltage VCE sat =3.0V@IC=30A ▼ Industry Standard TO-3P Package C G ▼ RoHS Compliant
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AP30G120W
Fig11.
ap30g120w
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30G120ASW
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP30G120ASW-HF-3 N-Channel Insulated Gate Bipolar Power Transistor High Speed Switching V CES 1200V Low Saturation Voltage C tab 30A IC Typical VCE(sat)= 2.9V at IC=30A G Internal "Co-Pak" Fast Recovery Diode C C RoHS-compliant, halogen-free TO-3P package
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AP30G120ASW-HF-3
AP30G120AS
30G120ASW
30G120ASW
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Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP30G120W-HF-3 N-Channel Insulated Gate Bipolar Power Transistor VCES 1200V High Speed Switching C Low Saturation Voltage 30A IC Typical VCE sat = 3.0V at IC=30A RoHS-compliant halogen-free TO-3P package G C C G E TO-3P E
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AP30G120W-HF-3
100oC
AP30G120
30G120W
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AP30G120ASW
Abstract: AP30G120 VCE-12 500V N-Channel IGBT TO-3P
Text: AP30G120ASW RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD. Features ▼ High Speed Switching VCES ▼ Low Saturation Voltage V CE sat =2.9V@IC=30A ▼ CO-PAK, IGBT With FRD ▼ RoHS Compliant IC
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AP30G120ASW
Fig11.
AP30G120ASW
AP30G120
VCE-12
500V N-Channel IGBT TO-3P
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