Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP2306GN-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D BV DSS Small Package Outline Surface Mount Device R DS ON G RoHS-compliant, Halogen-free 20V 35mΩ ID 5.3A S Description D Advanced Power MOSFETs from APEC provide the designer with the best
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AP2306GN-HF-3
AP2306GN-HF-3
OT-23
OT-23
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Untitled
Abstract: No abstract text available
Text: AP2306GN-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS Capable of 2.5V gate drive Lower on-resistance 20V RDS ON D 35m ID Surface mount package RoHS Compliant 5.3A S SOT-23 Description D G Advanced Power MOSFETs utilized advanced processing techniques
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AP2306GN-HF
OT-23
OT-23
100ms
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AP2306GN
Abstract: No abstract text available
Text: AP2306GN RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 2.5V gate drive ▼ Lower on-resistance D BVDSS 20V RDS ON 35mΩ ID ▼ Surface mount package 5.3A S SOT-23 Description D G Advanced Power MOSFETs utilized advanced processing techniques to
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AP2306GN
OT-23
OT-23
100ms
270/W
AP2306GN
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AP2306GN
Abstract: No abstract text available
Text: AP2306GN Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 2.5V gate drive ▼ Lower on-resistance D ▼ Surface mount package BVDSS 20V RDS ON 32mΩ ID 5.3A S SOT-23 Description G Advanced Power MOSFETs utilized advanced processing techniques to
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AP2306GN
OT-23
OT-23
100ms
270/W
AP2306GN
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Untitled
Abstract: No abstract text available
Text: AP2306GN RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS Capable of 2.5V gate drive Lower on-resistance 20V RDS ON D 35m ID Surface mount package 5.3A S SOT-23 Description D G Advanced Power MOSFETs utilized advanced processing techniques to
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AP2306GN
OT-23
OT-23
100ms
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Untitled
Abstract: No abstract text available
Text: AP2306GN-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 2.5V gate drive ▼ Lower on-resistance D ▼ Surface mount package BVDSS 20V RDS ON 35mΩ ID ▼ RoHS Compliant 5.3A S SOT-23 Description
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AP2306GN-HF
OT-23
OT-23
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AP2306GN-HF
Abstract: No abstract text available
Text: AP2306GN-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 2.5V gate drive ▼ Lower on-resistance D BVDSS 20V RDS ON 35mΩ ID ▼ Surface mount package ▼ RoHS Compliant 5.3A S SOT-23 Description
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Original
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PDF
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AP2306GN-HF
OT-23
OT-23
100ms
270/W
AP2306GN-HF
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Untitled
Abstract: No abstract text available
Text: AP2306GN Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 2.5V gate drive ▼ Lower on-resistance D ▼ Surface mount package BVDSS 20V RDS ON 35mΩ ID 5.3A S SOT-23 Description G Advanced Power MOSFETs utilized advanced processing techniques to
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Original
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AP2306GN
OT-23
OT-23
100ms
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