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Abstract: No abstract text available
Text: AP1001BSQ Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lead-Free Package D ▼ Low Conductance Loss ▼ Low Profile < 0.7mm BVDSS 25V RDS(ON) 6mΩ ID G 15A S Description The AP1001BSQ used the latest APEC Power MOSFET silicon
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AP1001BSQ
AP1001BSQ
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100ms
Fig10.
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ap1001
Abstract: AP1001BSQ 6M15A
Text: AP1001BSQ Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lead-Free Package D ▼ Low Conductance Loss ▼ Low Profile < 0.7mm BVDSS 25V RDS(ON) 6mΩ ID G 15A S Description The AP1001BSQ used the latest APEC Power MOSFET silicon
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AP1001BSQ
AP1001BSQ
100us
100ms
Fig10.
ap1001
6M15A
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Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP1001BSQ-3 N-channel Enhancement-mode Power MOSFET Lead Pb -free, Halogen-free D Low Conductance Losses Fast Switching Performance Low Profile (< 0.7mm ) G S BV DSS 25V RDS(ON) 6mΩ ID 15A Description The AP1001BSQ-3 uses the latest APEC Power MOSFET silicon
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AP1001BSQ-3
AP1001BSQ-3
AP1001BSQ-3TR
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Abstract: No abstract text available
Text: AP1001BSQ Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Lead-Free Package BVDSS D 30V RDS ON Low Conductance Loss Low Profile ( < 0.7mm ) 6m ID G 15A S Description The AP1001BSQ used the latest APEC Power MOSFET silicon
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Original
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AP1001BSQ
AP1001BSQ
100us
100ms
Fig10.
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PDF
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Untitled
Abstract: No abstract text available
Text: AP1001BSQ Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lead-Free Package D ▼ Low Conductance Loss ▼ Low Profile < 0.7mm BVDSS 30V RDS(ON) 6mΩ ID G 15A S Description The AP1001BSQ used the latest APEC Power MOSFET silicon
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Original
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AP1001BSQ
AP1001BSQ
100us
100ms
Fig10.
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PDF
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