AP1000C-11
Abstract: No abstract text available
Text: AP1000C-11 SILICON PIN DIODE DESCRIPTION: The AP1000C-11 is a Passivated Epitaxial Silicon PIN Diode Housed in a Hermetically Sealed Glass Package. This Device Iis Designed to Cover a Wide Range of Control Applications Such as RF Switching, Phase Shifting,
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AP1000C-11
AP1000C-11
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S82D
Abstract: No abstract text available
Text: 82D 00086 /0258354 ADVANCED SEMICONDUCTOR d T -o ? - /S" -*53 —e e — e n tr a "flâ » F | 0 5 S a 3 S 4 DQO DDa b s PIN SWITCHING DIODES PART NUMBER Vb .M i«’ @ 10nA Ivoltsl - 0j.s2 max. 1PFI Rsmax3 @ 20mA lObmsI Rsmax S> 100mA ¡Ohmsj Ti4 typ. (nsecj
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AP700A
AP700B
AP700C
AP700D
AP1000A
AP1000C
AP1000D
AP2000A
AP2000B
AP2000C
S82D
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AP2000A
Abstract: No abstract text available
Text: PIN SWITCHING DIODES ASI, AP Series of PIN Switching Diodes are passivated epitaxial silicon devices. PIN Switching Diodes are designed to provide two impedance states, one approaching an open circuit reverse bias , and a short circuit (forward bias). These
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ap3000d
Abstract: AP1000A precision conductivity meter AP2000C AP5000A AP5000C pin diode AP700A AP1000B AP0300B AP1000D
Text: PIN SWITCHING DIODES ASI, AP Series of PIN Sw itching Diodes are passivated epitaxial silicon devices. PIN Sw itching Diodes are designed to provide two im pedance states, one approaching an open circuit reverse bias , and a short circuit (forw ard bias). These
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