rf push pull mosfet power amplifier
Abstract: 100 watt hf mosfet 12 volt 150w amplifier RF VHF 139 144 mhz uhf 150w mosfet 150w amplifier RF VHF 139 - 144 mhz LDMOS 15w ldmos l2711 vhf LP801 LK602 LR941
Text: polyfet rf devices Broad Band RF Power MOSFET Transistors TB# 178 179 180 181 182 183D 184 185 186 187 188 189 191 192 193A 194 195 196 197 199 200NUM1 201 202 203 204 205 206 207 208 210 211 212 Freq Range 136-174 30-88 50-88 118-165 100-500 1.5-30 1.5-30
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200NUM1
SQ221
LK822
LK722
LX521
rf push pull mosfet power amplifier
100 watt hf mosfet 12 volt
150w amplifier RF VHF 139 144 mhz
uhf 150w mosfet
150w amplifier RF VHF 139 - 144 mhz
LDMOS 15w
ldmos l2711 vhf
LP801
LK602
LR941
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MGCF21
Abstract: LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet
Text: polyfet rf devices LDMOS Flanged Mount Pout Freq Gain theta 28 Volt LDMOS gm Idsat Ciss Crss Coss mho A polyfet rf devices Broad Band RF Power MOSFET LDMOS Transistors Surface Mount Pout Freq Gain theta 12.5 Volt VDMOS S Series gm Idsat Ciss Crss Coss Flanged Mount
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L8821P
LB421
L8821P
LP721
SM341
LQ821
SQ701
SR401
MGCF21
LY942
MOSFET 50 amp 1000 volt
Gx4002
5 watt hf mosfet
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AP 309
Abstract: sn 76545 CRYSTAL s173 2 396 s170 S223 S72 MOS S100 S101 S240
Text: PRELIMINARY PRODUCT INFORMARTION MOS INTEGRATED CIRCUIT µ PD161830 240-OUTPUT TFT-LCD SOURCE DRIVER COMPATIBLE WITH 64-GRAY SCALES DESCRIPTION The µ PD161830 is a source driver for TFT-LCDs supporting 64 gray-scale display and can operate with a supply
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PD161830
240-OUTPUT
64-GRAY
PD161830
000-color
AP 309
sn 76545
CRYSTAL s173
2 396
s170
S223
S72 MOS
S100
S101
S240
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DHO 165 equivalent
Abstract: dYNAMIC mIC pre amp ICs
Text: ICs for Telephone AN6472NFBP Cordless Telephone Speech Network IC Incorporating Cross-Point Switch • Overview Unit : mm The AN6472NFBP is a speech network IC which includes a receiver noise reducing function and is most suitable for quality cordless telephones. It incorporates a
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AN6472NFBP
QFH064-P-1414)
AN6472NFBP
DHO 165 equivalent
dYNAMIC mIC pre amp ICs
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MTE Contactor
Abstract: CAP-348TP CAP-347TP CAP-346TP MAPP0021D MAPP0034C MAPP0786D capacitor 400v wiring diagram contactor 40 amp 3 phase MAPP0128D
Text: Matrix AP 400V – 690V TECHNICAL REFERENCE MANUAL FORM: MAP-TRM-E REL. October 2014 REV. 018 2014 MTE Corporation High Voltage! Only a qualified electrician can carry out the electrical installation of this filter. WARNING Quick Reference ❶ Selection Guide
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CAB-26APD
CAB-42AP
CAB-48AP
MTE Contactor
CAP-348TP
CAP-347TP
CAP-346TP
MAPP0021D
MAPP0034C
MAPP0786D
capacitor 400v
wiring diagram contactor 40 amp 3 phase
MAPP0128D
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s357
Abstract: crystal S333 s276 pin diagram for IC 4580 S355 switch ic 7420 data sheet s307 S394 s314 S359
Text: DATA SHEET MOS INTEGRATED CIRCUIT µ PD161602A/B 360/396-OUTPUT TFT-LCD SOURCE DRIVER COMPATIBLE WITH 64-GRAY SCALES DESCRIPTION The µ PD161602A/B is a source driver for TFT-LCDs supporting 64 gray-scale display and can operate with a supply voltage of 2.5 V for the logic block and 5.0 V for the driver block. Data input as 6-bit x 3-dot digital data is
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PD161602A/B
360/396-OUTPUT
64-GRAY
PD161602A/B
000-color
s357
crystal S333
s276
pin diagram for IC 4580
S355 switch
ic 7420 data sheet
s307
S394
s314
S359
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agc circuit use op amp
Abstract: AN2050FB QFP044-P-1010 10MHz agc circuit video clamp agc
Text: AN2050FB CCD Monochrome Video Camera Signal Processor IC • Overview Unit:mm The AN2050FB is an integrated circuit specified to the monochrome CCD image element which is employed in the monitoring video cameras, door phones, TV telephone sets, etc. The high frequency block and
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AN2050FB
AN2050FB
agc circuit use op amp
QFP044-P-1010
10MHz agc circuit
video clamp agc
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PD69104
Abstract: PD69108 PD69104A Solar Garden Light Controller 4 pin LX5535 lx6503 PD69100 lx6523a LX5518 LX1980
Text: Microsemi • Microsemi • Microsemi • Microsemi Analog Mixed Signal Group The vision of Microsemi’s Analog Mixed Signal Group AMSG is to engineer high performance power management products differentiated for the most demanding applications. The technical teams
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active harmonic filter dspic
Abstract: MCP6001 MCP6141 PIC32 8th order lowpass butterworth filter Active Band-pass Filter with carrier frequency
Text: Mindi Active Filter Designer User’s Guide 2008 Microchip Technology Inc. DS51666B Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.
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DS51666B
DS51666B-page
active harmonic filter dspic
MCP6001
MCP6141
PIC32
8th order lowpass butterworth filter
Active Band-pass Filter with carrier frequency
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AP 4100 AA V1.3
Abstract: S357 S85 452 s276 S217 S186 S87 452 s363 S227 S368
Text: データ・シート MOS 集積回路 MOS Integrated Circuit µ PD161602A/B 360/396 出力 TFT-LCD 用ソース・ドライバ（64 階調） µ PD161602A/B は，64 階調表示対応の TFT-LCD 用ソース・ドライバで，ロジック：2.5 Ｖ，ドライバ：5.0 V の電
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PD161602A/B
PD161602A/B
PD161602AP
PD161602BP
S15381JJ1V0DS00
132-bit
D00-D05
D10-D15
D20-D25
AP 4100 AA V1.3
S357
S85 452
s276
S217
S186
S87 452
s363
S227
S368
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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KELVIN-VARLEY DIVIDER
Abstract: OFM-1A DP311 ofm1a FN507
Text: L irm LT1008 TECHNOLOGY Picoamp Input Current, M icrovolt Offset, Low Noise Op Amp FCflTURCS • ■ ■ ■ ■ ■ ■ ■ DCSCfflPTIOn Guaranteed Bias Current The LT1008 is a universal precision operational ampli fier which can be used in practically all precision ap
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LT1008
LT1008
100pA,
LT1008.
KELVIN-VARLEY DIVIDER
OFM-1A
DP311
ofm1a
FN507
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Untitled
Abstract: No abstract text available
Text: TH IS DRAWING IS UNPUBLISHED. § RELEASED FOR PUBLICATION BY AMP INCORPORATED. COPYRIGHT 19 ^ .19 D isr LOC DO NOT S CALE raGHTS RESERVED. REVISIONS AP DO NOT EXCEPT DATE REVISED BY ECLBOO-120/01 R E V IS E BY DESCRIPTION LTR 29JUN01 HL PLF C AD 1 .8 ±0.1
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ECLBOO-120/01
29JUN01
29JUN2001
Ib020386
23FEB95
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Untitled
Abstract: No abstract text available
Text: 1 4 THIS DRAWING 7 IS C O P Y R IG H T 3 U N P U B L IS H E D . RELEASED BY 19 AMP IN COR PO RA TE D. FOR ALL PUBLICATION R IG H T S 2 ,19 LOC R ES E R V E D . AF DI ST REVISIONS 50 DESCRIPTION LT R REVISED STATUS PER 0G3A-0678-0C) DATE DWN AP VD 260CT00
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0G3A-0678-0C)
260CT00
21JUN2000
17105-3b0
26-0CT-00
amp02644
/home/amp02644/edmmod
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices F2201 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET AP PACKAGE Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"tm process features gold metal for greatly extended
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F2201
1110AvenidaAcaso,
72410CH
G000241
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices F2012 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET £ P PACKAGE Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"to process features gold metal for greatly extended
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F2012
1110Avenida
7241DCH
DQ00H33
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices L2012 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET PACKAGE Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet" *"* process features gold metal for greatly extended
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L2012
00DDB77
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices F1206 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET fiP PACKAGE Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown " P o l y f e t " p r o c e s s features
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F1206
1110AvenidaAcaso,
7S41GCH
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices F2202 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET £P PACKAGE Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet”1"1 process features gold metal for greatly extended
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F2202
1110AvenidaAcaso,
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices F1014 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET fiP PACKAGE Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "PolyfetMtm process features gold metal for greatly extended
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F1014
805J-484-3393
000012S
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices F1222 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET ¿P PACKAGE Silicon D M O S designed specifically for R F applications. Immune to forward and reverse bias secondary breakdown "Polyfet"process features gold metal for greatly extended
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F1222
1110AvenidaAcaso,
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices F1060 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET fip package: Silicon D M O S designed specifically for R F applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1111 process features gold metal for greatly extended
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F1060
DDDD147
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Untitled
Abstract: No abstract text available
Text: INTEGRATED TOSHIBA CIRCUIT TECHNICAL DATA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC5832 FT SILICON GATE CMOS 32 MBIT 4 M X 8 BITS CMOS NAND E2PROM TENTATIVE DATA DESCRIPTION The TC5832FT device is a single 5.0-volt 33 M (34,603,008) bit NAND Electrically Erasable and
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TC5832
TC5832FT
528-byte,
528-byte
TC5832FT--
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mospec s20c45
Abstract: S20C45 S20C S20C30 S20C50 S20C60
Text: Sk MOSPEC S20C30 Thru S20C60 Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS U sing th e S ch o ttky B a rrie r p rin c ip le w ith a M o lyb d e n u m b a rrie r m etal. T h e se s ta te -o f-th e -a rt g e o m e try fe a tu re s ep ita xia l co n s tru c tio n w ith o xid e p a s s iv a tio n and m etal o ve rla y contact.
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S20C30
S20C60
S20C50
mospec s20c45
S20C45
S20C
S20C50
S20C60
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