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    AP AMP MOS Search Results

    AP AMP MOS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    AP AMP MOS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    rf push pull mosfet power amplifier

    Abstract: 100 watt hf mosfet 12 volt 150w amplifier RF VHF 139 144 mhz uhf 150w mosfet 150w amplifier RF VHF 139 - 144 mhz LDMOS 15w ldmos l2711 vhf LP801 LK602 LR941
    Text: polyfet rf devices Broad Band RF Power MOSFET Transistors TB# 178 179 180 181 182 183D 184 185 186 187 188 189 191 192 193A 194 195 196 197 199 200NUM1 201 202 203 204 205 206 207 208 210 211 212 Freq Range 136-174 30-88 50-88 118-165 100-500 1.5-30 1.5-30


    Original     		PDF 200NUM1 SQ221 LK822 LK722 LX521 rf push pull mosfet power amplifier 100 watt hf mosfet 12 volt 150w amplifier RF VHF 139 144 mhz uhf 150w mosfet 150w amplifier RF VHF 139 - 144 mhz LDMOS 15w ldmos l2711 vhf LP801 LK602 LR941

    MGCF21

    Abstract: LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet
    Text: polyfet rf devices LDMOS Flanged Mount Pout Freq Gain theta 28 Volt LDMOS gm Idsat Ciss Crss Coss mho A polyfet rf devices Broad Band RF Power MOSFET LDMOS Transistors Surface Mount Pout Freq Gain theta 12.5 Volt VDMOS S Series gm Idsat Ciss Crss Coss Flanged Mount


    Original     		PDF L8821P LB421 L8821P LP721 SM341 LQ821 SQ701 SR401 MGCF21 LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet

    AP 309

    Abstract: sn 76545 CRYSTAL s173 2 396 s170 S223 S72 MOS S100 S101 S240
    Text: PRELIMINARY PRODUCT INFORMARTION MOS INTEGRATED CIRCUIT µ PD161830 240-OUTPUT TFT-LCD SOURCE DRIVER COMPATIBLE WITH 64-GRAY SCALES DESCRIPTION The µ PD161830 is a source driver for TFT-LCDs supporting 64 gray-scale display and can operate with a supply


    Original     		PDF PD161830 240-OUTPUT 64-GRAY PD161830 000-color AP 309 sn 76545 CRYSTAL s173 2 396 s170 S223 S72 MOS S100 S101 S240

    DHO 165 equivalent

    Abstract: dYNAMIC mIC pre amp ICs
    Text: ICs for Telephone AN6472NFBP Cordless Telephone Speech Network IC Incorporating Cross-Point Switch • Overview Unit : mm The AN6472NFBP is a speech network IC which includes a receiver noise reducing function and is most suitable for quality cordless telephones. It incorporates a


    Original     		PDF AN6472NFBP QFH064-P-1414) AN6472NFBP DHO 165 equivalent dYNAMIC mIC pre amp ICs

    MTE Contactor

    Abstract: CAP-348TP CAP-347TP CAP-346TP MAPP0021D MAPP0034C MAPP0786D capacitor 400v wiring diagram contactor 40 amp 3 phase MAPP0128D
    Text: Matrix AP 400V – 690V TECHNICAL REFERENCE MANUAL FORM: MAP-TRM-E REL. October 2014 REV. 018 2014 MTE Corporation High Voltage! Only a qualified electrician can carry out the electrical installation of this filter. WARNING Quick Reference ❶ Selection Guide


    Original     		PDF CAB-26APD CAB-42AP CAB-48AP MTE Contactor CAP-348TP CAP-347TP CAP-346TP MAPP0021D MAPP0034C MAPP0786D capacitor 400v wiring diagram contactor 40 amp 3 phase MAPP0128D

    s357

    Abstract: crystal S333 s276 pin diagram for IC 4580 S355 switch ic 7420 data sheet s307 S394 s314 S359
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µ PD161602A/B 360/396-OUTPUT TFT-LCD SOURCE DRIVER COMPATIBLE WITH 64-GRAY SCALES DESCRIPTION The µ PD161602A/B is a source driver for TFT-LCDs supporting 64 gray-scale display and can operate with a supply voltage of 2.5 V for the logic block and 5.0 V for the driver block. Data input as 6-bit x 3-dot digital data is


    Original     		PDF PD161602A/B 360/396-OUTPUT 64-GRAY PD161602A/B 000-color s357 crystal S333 s276 pin diagram for IC 4580 S355 switch ic 7420 data sheet s307 S394 s314 S359

    agc circuit use op amp

    Abstract: AN2050FB QFP044-P-1010 10MHz agc circuit video clamp agc
    Text: AN2050FB CCD Monochrome Video Camera Signal Processor IC • Overview Unit:mm The AN2050FB is an integrated circuit specified to the monochrome CCD image element which is employed in the monitoring video cameras, door phones, TV telephone sets, etc. The high frequency block and


    Original     		PDF AN2050FB AN2050FB agc circuit use op amp QFP044-P-1010 10MHz agc circuit video clamp agc

    PD69104

    Abstract: PD69108 PD69104A Solar Garden Light Controller 4 pin LX5535 lx6503 PD69100 lx6523a LX5518 LX1980
    Text: Microsemi • Microsemi • Microsemi • Microsemi Analog Mixed Signal Group The vision of Microsemi’s Analog Mixed Signal Group AMSG is to engineer high performance power management products differentiated for the most demanding applications. The technical teams


    Original     		PDF

    active harmonic filter dspic

    Abstract: MCP6001 MCP6141 PIC32 8th order lowpass butterworth filter Active Band-pass Filter with carrier frequency
    Text: Mindi Active Filter Designer User’s Guide 2008 Microchip Technology Inc. DS51666B Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.


    Original     		PDF DS51666B DS51666B-page active harmonic filter dspic MCP6001 MCP6141 PIC32 8th order lowpass butterworth filter Active Band-pass Filter with carrier frequency

    AP 4100 AA V1.3

    Abstract: S357 S85 452 s276 S217 S186 S87 452 s363 S227 S368
    Text: データ・シート MOS 集積回路 MOS Integrated Circuit µ PD161602A/B 360/396 出力 TFT-LCD 用ソース・ドライバ（64 階調） µ PD161602A/B は，64 階調表示対応の TFT-LCD 用ソース・ドライバで，ロジック：2.5 Ｖ，ドライバ：5.0 V の電


    Original     		PDF PD161602A/B PD161602A/B PD161602AP PD161602BP S15381JJ1V0DS00 132-bit D00-D05 D10-D15 D20-D25 AP 4100 AA V1.3 S357 S85 452 s276 S217 S186 S87 452 s363 S227 S368

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    KELVIN-VARLEY DIVIDER

    Abstract: OFM-1A DP311 ofm1a FN507
    Text: L irm LT1008 TECHNOLOGY Picoamp Input Current, M icrovolt Offset, Low Noise Op Amp FCflTURCS • ■ ■ ■ ■ ■ ■ ■ DCSCfflPTIOn Guaranteed Bias Current The LT1008 is a universal precision operational ampli­ fier which can be used in practically all precision ap­


    OCR Scan     		PDF LT1008 LT1008 100pA, LT1008. KELVIN-VARLEY DIVIDER OFM-1A DP311 ofm1a FN507

    Untitled

    Abstract: No abstract text available
    Text: TH IS DRAWING IS UNPUBLISHED. § RELEASED FOR PUBLICATION BY AMP INCORPORATED. COPYRIGHT 19 ^ .19 D isr LOC DO NOT S CALE raGHTS RESERVED. REVISIONS AP DO NOT EXCEPT DATE REVISED BY ECLBOO-120/01 R E V IS E BY DESCRIPTION LTR 29JUN01 HL PLF C AD 1 .8 ±0.1


    OCR Scan     		PDF ECLBOO-120/01 29JUN01 29JUN2001 Ib020386 23FEB95

    Untitled

    Abstract: No abstract text available
    Text: 1 4 THIS DRAWING 7 IS C O P Y R IG H T 3 U N P U B L IS H E D . RELEASED BY 19 AMP IN COR PO RA TE D. FOR ALL PUBLICATION R IG H T S 2 ,19 LOC R ES E R V E D . AF DI ST REVISIONS 50 DESCRIPTION LT R REVISED STATUS PER 0G3A-0678-0C) DATE DWN AP VD 260CT00


    OCR Scan     		PDF 0G3A-0678-0C) 260CT00 21JUN2000 17105-3b0 26-0CT-00 amp02644 /home/amp02644/edmmod

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F2201 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET AP PACKAGE Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"tm process features gold metal for greatly extended


    OCR Scan     		PDF F2201 1110AvenidaAcaso, 72410CH G000241

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F2012 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET £ P PACKAGE Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"to process features gold metal for greatly extended


    OCR Scan     		PDF F2012 1110Avenida 7241DCH DQ00H33

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices L2012 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET PACKAGE Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet" *"* process features gold metal for greatly extended


    OCR Scan     		PDF L2012 00DDB77

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F1206 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET fiP PACKAGE Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown " P o l y f e t " p r o c e s s features


    OCR Scan     		PDF F1206 1110AvenidaAcaso, 7S41GCH

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F2202 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET £P PACKAGE Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet”1"1 process features gold metal for greatly extended


    OCR Scan     		PDF F2202 1110AvenidaAcaso,

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F1014 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET fiP PACKAGE Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "PolyfetMtm process features gold metal for greatly extended


    OCR Scan     		PDF F1014 805J-484-3393 000012S

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F1222 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET ¿P PACKAGE Silicon D M O S designed specifically for R F applications. Immune to forward and reverse bias secondary breakdown "Polyfet"process features gold metal for greatly extended


    OCR Scan     		PDF F1222 1110AvenidaAcaso,

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices F1060 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET fip package: Silicon D M O S designed specifically for R F applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1111 process features gold metal for greatly extended


    OCR Scan     		PDF F1060 DDDD147

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED TOSHIBA CIRCUIT TECHNICAL DATA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC5832 FT SILICON GATE CMOS 32 MBIT 4 M X 8 BITS CMOS NAND E2PROM TENTATIVE DATA DESCRIPTION The TC5832FT device is a single 5.0-volt 33 M (34,603,008) bit NAND Electrically Erasable and


    OCR Scan     		PDF TC5832 TC5832FT 528-byte, 528-byte TC5832FT--

    mospec s20c45

    Abstract: S20C45 S20C S20C30 S20C50 S20C60
    Text: Sk MOSPEC S20C30 Thru S20C60 Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS U sing th e S ch o ttky B a rrie r p rin c ip le w ith a M o lyb d e n u m b a rrie r m etal. T h e se s ta te -o f-th e -a rt g e o m e try fe a tu re s ep ita xia l co n s tru c tio n w ith o xid e p a s s iv a tio n and m etal o ve rla y contact.


    OCR Scan     		PDF S20C30 S20C60 S20C50 mospec s20c45 S20C45 S20C S20C50 S20C60