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    AOT 430 Search Results

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    AOT 430 Price and Stock

    Alpha & Omega Semiconductor AOT430

    MOSFET N-CH 75V 80A TO220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey AOT430 Tube 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.65024
    • 10000 $0.65024
    Buy Now
    Quest Components AOT430 104
    • 1 $6.27
    • 10 $6.27
    • 100 $3.8665
    • 1000 $3.8665
    • 10000 $3.8665
    Buy Now
    TME AOT430 127 1
    • 1 $1.08
    • 10 $0.97
    • 100 $0.77
    • 1000 $0.73
    • 10000 $0.73
    Buy Now

    AOT 430 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AOT430 Alpha & Omega Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF

    AOT 430 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AOT-2015HPW-1751B

    Abstract: k3217 LTC3217 LTC3217EUD MO-220 S/BIP/SCB345100/B/30/10/AOT-2015HPW-1751B
    Text: LTC3217 600mA Low Noise Multi-LED Camera Light Charge Pumps DESCRIPTION FEATURES n n n n n n n n n n n n Charge Pump Provides High Efficiency with Automatic Mode Switching Multimode Operation: 1x, 1.5x, 2x Four Low Dropout LED Outputs Up to 600mA Total Output Current


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    PDF LTC3217 600mA 16-Lead LTC3251 500mA 10-Lead LTC3405/LTC3405A 300mA LTC3406/LTC3406A AOT-2015HPW-1751B k3217 LTC3217 LTC3217EUD MO-220 S/BIP/SCB345100/B/30/10/AOT-2015HPW-1751B

    programming cellphones software

    Abstract: LT1932 LTC3217 LTC3217EUD MO-220 k3217 aot 2015
    Text: LTC3217 600mA Low Noise Multi-LED Camera Light Charge Pump DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Charge Pump Provides High Efficiency with Automatic Mode Switching Multimode Operation: 1x, 1.5x, 2x Four Low Dropout LED Outputs


    Original
    PDF LTC3217 600mA 16-Lead LTC3217 10-Lead LTC3405/LTC3405A 300mA LTC3406/LTC3406A 600mA programming cellphones software LT1932 LTC3217EUD MO-220 k3217 aot 2015

    Untitled

    Abstract: No abstract text available
    Text: LTC3217 600mA Low Noise Multi-LED Camera Light Charge Pumps DESCRIPTION FEATURES n n n n n n n n n n n n Charge Pump Provides High Efficiency with Automatic Mode Switching Multimode Operation: 1x, 1.5x, 2x Four Low Dropout LED Outputs Up to 600mA Total Output Current


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    PDF LTC3217 600mA 16-Lead 10-Lead LTC3405/LTC3405A 300mA LTC3406/LTC3406A 600mA 3217fa

    2N2222

    Abstract: npn 2222 transistor n22222 2222a n2222 npn 2222 2n22222 br 2222 npn N 2222 n2222a
    Text: 2 N 2221 • 2 N 2221 A • 2 N 2222 • 2 N 2222 A 'W Silizium-NPN-Epitaxial-Planar-Schalttransistoren Silicon NPN Epitaxial Planar Switching Transistors A nw endungen: HF-Verstärker und Schalter A p p lic a tio n s : RF am plifiers and switches Besondere M erkm ale:


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    PDF

    CA3420T

    Abstract: CA3420AE voltmeter ic 741 CA3420 application Harris ota
    Text: HARRIS SEfllCOND SECTOR blE ]> • 4305271 004b371 447 « H A S HARRIS S E M I C O N D U C T O R C A ? 4 2 fi W / H V Low Supply Voltage, Low Input Current BiMOS Operational Amplifiers March1993 Features Description • 2V Supply at 300iiA Supply Currant


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    PDF 004b371 CA3420A CA3420 CA3420T CA3420AE voltmeter ic 741 application Harris ota

    photointerrupter

    Abstract: aot 430
    Text: SIEMENS NPN-Silizium-Fototransistor Silicon NPN Phototransistor LPT 80 A 2.54 '2.03 r- cNj LO CO 1.70 1.45 GE006391 Approx. weight 0.2 g Maße in mm, wenn nicht anders angegeben/D im ensions in mm, unless otherw ise specified W esentliche Merkmale Features


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    PDF GE006391 Q68000-A7852 photointerrupter aot 430

    mosfet v0

    Abstract: CA5260 CA5260T
    Text: blE D HARRIS SEMICOND SECTOR m • 4302271 0Q4fc>427 510 B H A S CA5260 HARRIS SEMICONDUCTOR BiMOS Microprocessor Operational Amplifiers with MOSFET Input/CMOS Output March 1993 Features Description • MOSFET Input Stage provides • Very High 3 » 1.5TO 1 5 x 10120 Typ.


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    PDF CA5260 CA5260A CA5260 CA5160 10kil 43DS271 G04b431 CA5260, CA5260A mosfet v0 CA5260T

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Silizium-4-Quadranten-Fotodiode Silicon Four Quadrant Photodiode SFH 244 S Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. W esentliche M erkmale Features • • • • Speziell geeignet für Anwendungen im


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    PDF fl23Sb05 fl235b05 0DS7b47

    toshiba tlc 711

    Abstract: aot 110 opto CD 4017 PIN DIAGRAM 4011 BP TOSHIBA opto 2561 litton cpu primer p19 TC351 ic cd 4017 PIN DIAGRAM ic cd 4017
    Text: TOSHIBA INTEGRATED CIRCUIT CMOS D ie ;T A « TC 3 5 1 8 0 F T E C H N IC A L D A T A TC35190F • = ¡VTEC3ATED C : S C. SILICON MONOLITHIC Video-data Coepretslon and E»panslon C o n tro lle r* ) 1988-1 1*03 DESCRIPTION TC35190F ( VCEC ) p e rfo ri* ercoJ.RC m i decodins


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    PDF TC35190F 77S6pel s9-29-23 TC381 toshiba tlc 711 aot 110 opto CD 4017 PIN DIAGRAM 4011 BP TOSHIBA opto 2561 litton cpu primer p19 TC351 ic cd 4017 PIN DIAGRAM ic cd 4017

    AF 109 R

    Abstract: AF109R af109 germanium-pnp-mesa-hf-transistor
    Text: ¡fi Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: G eregelte Vorstufen bis 260 MHz Applications: C ontrolled pre-stages up to 260 MHz Besondere Merkmale: Features: • Leistungsverstärkung 16,5 dB • Power gain 16.5 dB • Rauschmaß < 4 ,8 dB


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    PDF AF109R AF 109 R AF109R af109 germanium-pnp-mesa-hf-transistor

    CA3100E

    Abstract: CA3100 2120D D04B
    Text: HARRIS SEMICOND SECTOR b l E ]> WÊ M3DE271 GGMbSTQ h5T I H HAS CA3100 33 HARRIS SEMICONDUCTOR J ru Ë \J \J Wideband Operational Amplifier March 1993 Description • High Open Loop Gain at Video Typ. at 1MHz


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    PDF M3DE271 CA3100 CA3100 38MHz 110kHz. 15MHz \2N5320 33fiF 50QLME: CA3100E 2120D D04B

    Untitled

    Abstract: No abstract text available
    Text: SDttfHS , HIN200 th ru HIN213 +5V Powered RS-232 Transm itters/R eceivers w ith 0.1 M icrofarad External C apacitors April 1996 Features Description • Meets All RS-232E and V.28 Specifications The HIN200-HIN213 family of RS-232 transmitters/receivers


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    PDF HIN200 HIN213 RS-232 RS-232E HIN200-HIN213 HIN201 HIN209) RS232

    bosch Knock sensor

    Abstract: cc196 CC195 bosch Knock cc196 CC195 Knock Sensor IC bosch piezoelectric sensor bosch cc195 bosch Knock sensor CC196 bosch window motor knock sensor Bosch
    Text: 20-PPR-1999 CC195 16:33 FROM BOSCH SAT SALES TO 901132799527 P. 02 Specification English extract CC195 Knock Sensor IC Specification Version 6.9a This specification is the property of Bosch and must be maintained in confidence and not discfoeed to others without the prior written consent of Bosch. Bosch makes no warranties


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    PDF 20-PPR-1999 CC195 CC195 4JL25 FM-13. S15kHz dB12kHz 816kHz 24kHz bosch Knock sensor cc196 bosch Knock cc196 CC195 Knock Sensor IC bosch piezoelectric sensor bosch cc195 bosch Knock sensor CC196 bosch window motor knock sensor Bosch

    D2 DIN 6784

    Abstract: D3 DIN 6784
    Text: Infineon ?si li noiosi «* G a A s M M IC Data Sheet C G Y180 • Poweramplifierfor DECT, PHS, WLL applications • Fully integrated 3 stage amplifier • Operating voltage range: 2.7 to 6 V • Overall power added efficiency 35% • Easy external matching


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    PDF Q68000-A8882 MW-12 P-SOT-223, D2 DIN 6784 D3 DIN 6784

    cqx 87

    Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
    Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157


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    PDF AA113 AA117 AA119 BAV17 BAV18 BAV19 BAV20 BAV21 cqx 87 germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175

    Untitled

    Abstract: No abstract text available
    Text: XC7372 72 Macrocell CMOS EPLD HXILINX Advance Product Information The Universal Interconnect Matrix connects the Function Blocks to each other and to all input pins, providing 100% connectivity between the Function Blocks. This allows logic functions to be mapped into the Function Blocks and


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    PDF XC7372 XC7372 68-Pin 84-Pin

    H209

    Abstract: H214
    Text: Data Sheet No. PD-9.675A INTERNATIONAL RECTIFIER l l O R 1 REPETITIVE AVALANCHE AND dv/dt RATED IRHM7150 IRHM8150 HEXFET TRANSISTORS SN7S68 JANSRSN7SB8 JANSHSN7S68 N-CHANNEL MEGA RAD HARO 100 Volt, 0.06512, MEGA RAD HARD HEXFET Product Summary International Rectifier’s MEGA RAD HARD Technology HEXFETs


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    PDF IRHM7150 IRHM8150 SN7S68 JANSHSN7S68 1x106 1x105 IRHM71500 IRHM7150U O-254 H209 H214

    Untitled

    Abstract: No abstract text available
    Text: 2 H a r r is C A 5 4 2 0 A C A 5 4 2 0 Low -S upply Voltage, L o w -In p u t C urrent BiMOS Operational Am plifiers A u g u s t 1991 Features • 5420A , C A 5420 G uaranteed to O perate From ± 1V to ± 10 V S upp lies • 2V S upp ly a t 30 0jiA S upp ly C urrent


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    PDF CA5420A CA5420* CA5420

    Untitled

    Abstract: No abstract text available
    Text: EL2090C .November 1993 Kev C C b lt E C Features • Complete video level restoration system • 0.01% differential gain and 0.02° differential phase accuracy at NTSC • 100 M Hz bandwidth • 0.1 dB flatness to 20 MHz • Sample-and-hold has 15 nA typical leakage and 1.5 pC charge


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    PDF EL2090C R68t01T EL2090C 5e-15 le-30 EL2090

    CA3066

    Abstract: CA3088 Pmos transistor 1N814 CA5130M tektronix 2230 adb voltage regulator CD4007 cascode transistor array Harris CA3086
    Text: HARRIS SEIIICON] SECTOR H A R R • 4302271 OOMbB^O BTT « H A S CA5130 IS SEMICONDUCTOR BiMOS Microprocessor Operational Amplifier with MOSFET Input/CMOS Output March 1993 Features Description • MOSFET input Stag« . Vary High Z ,.1.5TO 1.5 x 1012a )iyp .


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    PDF M3DS571 CA5130 CA5130A, CA5130 CA5130, CA5130A 100kHz AN66M CA3066 CA3088 Pmos transistor 1N814 CA5130M tektronix 2230 adb voltage regulator CD4007 cascode transistor array Harris CA3086

    CA3140S

    Abstract: Transistor Equivalent TT 2142 Harris CA3140AE diagram transistor tt 2140 CA3140 CA3140E Transistor TT 2140 PIN DIAGRAM OF IC CA3140 CA3130 peak detector CA3140AE
    Text: HARRIS SEPIICOND SECTOR blE D • 4302271 □D4bE‘lS 2TD H H A S HARRIS SEMICONDUCTOR CA3140 M ■ m W BiMOS Operational Amplifier with MOSFET Input/Bipolar Output April 1993 Features Description MOSFET Input Stage - Vary High Input Impedance Z,N -1.5TQ (Typ.)


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    PDF CA3140 200ns/Dlv 50mV/Div 200ns/Div 50mWDh/ 200ns/Div 140kHz, Tektronix7A13 RGURE35. CA3140S Transistor Equivalent TT 2142 Harris CA3140AE diagram transistor tt 2140 CA3140 CA3140E Transistor TT 2140 PIN DIAGRAM OF IC CA3140 CA3130 peak detector CA3140AE

    AX2022

    Abstract: TACT2150 D6142
    Text: TACT2150 512 X 8 CACHE ADDRESS COMPARATOR D 2 9 9 3 . JA N U A R Y 1 9 8 7 - R E V IS E D SEPTEM BER 1967 Address to MATCH Valid Time TACT2150-20 . . . 20 ns max TACT2150-30 . . . 30 ns max DW, JD . OR NT PACKAGE 300-Mil 24-Pin Ceramic Side-Brazed or Plastic Dual-In-Line or Small Outline


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    PDF TACT2150 300-Mil 24-Pin AX2022 D6142

    Untitled

    Abstract: No abstract text available
    Text: EPCOS Aluminum electrolytic capacitors Snap-in capacitors Series/Type: Date: B43508 December 2010 ŒPCOS AG 2010. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.


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    PDF B43508

    Untitled

    Abstract: No abstract text available
    Text: EL2090C élantec HIGH PtRFORMANCE ANALOG INTEGRATED CWCUITS EL2090C 100 MHz DC-Restored Video Amplifier F e a tu r e s G e n e ra l D e s c rip tio n • Com plete video level restoration system • 0.01% differential gain and 0.02° differential phase accuracy a t


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    PDF EL2090C EL2090C 5e-15 le-30 312T557 GG32flT