AOT-0603P-B01A
Abstract: AOT-0603P-B01AZ AOT0603P-B01-V 10E10 10E4 10E6 10E8 3050B aot-0603p diode 47-16
Text: APPROVAL SHEET AOT MODEL NAME AOT PART NUMBER CUSTOMER NAME DATE VERSION MAKER Prepared SMD LED : Blue Color AOT-0603P-B01AZ General Customer 2005/June 2 CUSTOMER Checked Approved AOT HEAD QUARTER No. 13, Gongye 5th. Road, Hsinchu Industrial Park, Hukou Shiang,
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AOT-0603P-B01AZ
2005/June
AOT-0603P-B01A
AOT-0603P-B01AZ
AOT0603P-B01-V
10E10
10E4
10E6
10E8
3050B
aot-0603p
diode 47-16
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AOT 127A
Abstract: aot 127 aot 128 AOT474 AOTF474
Text: AOT474/AOTF474 N-Channel Enhancement Mode Field Effect Transistor General Description Product Summary The AOT F 474/L uses a robust technology that is designed to provide efficient and reliable power conversion even in the most demanding applications, including motor control. With low R DS(ON) and excellent
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AOT474/AOTF474
474/L
O220FL
474/AOT
OTF474
AOT 127A
aot 127
aot 128
AOT474
AOTF474
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aot 127
Abstract: brc 300 abb AIN-300 rmu abb AIN-220 WBPEEUD240004 AIN-120 WBPEEUD240002 L type thermocouple conversion table AOT-150
Text: ControlIT Data Sheet Harmony Analog I/O TC00892A Description The Harmony Input/Output I/O System utilizes a variety of input and output blocks to interface process signals to the Symphony Enterprise Management and Control System. Analog input (AIN) blocks interface field inputs such as pressure and flow transmitter signals, thermocouple (TC) inputs, and resistive temperature device (RTD) inputs. Analog output (AOT) blocks
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TC00892A
WBPEEUD240001A2
aot 127
brc 300 abb
AIN-300
rmu abb
AIN-220
WBPEEUD240004
AIN-120
WBPEEUD240002
L type thermocouple conversion table
AOT-150
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Untitled
Abstract: No abstract text available
Text: AOT25S65/AOB25S65/AOTF25S65 650V 25A α MOS TM Power Transistor General Description Product Summary The AOT25S65 & AOB25S65 & AOTF25S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.
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AOT25S65/AOB25S65/AOTF25S65
AOT25S65
AOB25S65
AOTF25S65
AOT25S65L
AOTF25S65L
O-220
O-263
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AOT25S65
Abstract: No abstract text available
Text: AOT25S65/AOB25S65/AOTF25S65 650V 25A α MOS TM Power Transistor General Description Product Summary The AOT25S65 & AOB25S65 & AOTF25S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.
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AOT25S65/AOB25S65/AOTF25S65
AOT25S65
AOB25S65
AOTF25S65
AOT25S65L
AOTF25S65L
O-220
O-263
AOT25S65
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Abstract: No abstract text available
Text: AOT25S65/AOB25S65/AOTF25S65 650V 25A α MOS TM Power Transistor General Description Product Summary The AOT25S65 & AOB25S65 & AOTF25S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.
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AOT25S65/AOB25S65/AOTF25S65
AOT25S65
AOB25S65
AOTF25S65
AOT25S65L
AOTF25S65L
O-220
O-263
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Asrock
Abstract: amd RADEON e6760 2010 PC intel MOTHERBOARD SERVICE MANUAL motherboard asrock HD3000 nm10 MOTHERBOARD SERVICE MANUAL
Text: Industrial computing solutions Digital Signage Fanless Box PCs Panel PCs Embedded Boards Displays www.microdis.net 1 Industrial computers as the best choice INDUSTRIAL COMPUTER DESIGN Operating time: 24h/7days a week Low power consumption Highest reliability,
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24h/7days
Asrock
amd RADEON e6760
2010 PC intel MOTHERBOARD SERVICE MANUAL
motherboard asrock
HD3000
nm10 MOTHERBOARD SERVICE MANUAL
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Untitled
Abstract: No abstract text available
Text: active Frequency Mixers LOAD INSENSITIVE UNCL-X1 + 7 dBm LO, up to + 1 dBm RF UNCL-X1MH ( + 13 dBm LO, up to + 7 dBm RF) case style selection o u tlin e d ra w in g s s e e T ab le o f C o n te n ts U N C L -X U N C L -X 'IM H FREQUENCY M Hz MODEL NO. L O /R F
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toshiba tlc 711
Abstract: aot 110 opto CD 4017 PIN DIAGRAM 4011 BP TOSHIBA opto 2561 litton cpu primer p19 TC351 ic cd 4017 PIN DIAGRAM ic cd 4017
Text: TOSHIBA INTEGRATED CIRCUIT CMOS D ie ;T A « TC 3 5 1 8 0 F T E C H N IC A L D A T A TC35190F • = ¡VTEC3ATED C : S C. SILICON MONOLITHIC Video-data Coepretslon and E»panslon C o n tro lle r* ) 1988-1 1*03 DESCRIPTION TC35190F ( VCEC ) p e rfo ri* ercoJ.RC m i decodins
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TC35190F
77S6pelÂ
s9-29-23
TC381
toshiba tlc 711
aot 110 opto
CD 4017 PIN DIAGRAM
4011 BP TOSHIBA
opto 2561
litton cpu
primer p19
TC351
ic cd 4017 PIN DIAGRAM
ic cd 4017
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Untitled
Abstract: No abstract text available
Text: SIEMENS NPN-Silizium-Fototransistor NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silicon NPN Phototransistor Silicon NPN Phototransistor with Daylight Filter A re a SFH 317 SFH 317 F n o t f la t £ o> E 'l 1“ "! Q- _1C*J t/i — * 5 .5 — i 5'11
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Especially370
fl23SbDS
QG574flb
235bOS
00574A7
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TDA 4400
Abstract: TDA4400 4410 Demodulator 4410 8 pin TC 4410 TDA4410 tda video
Text: TDA 4400 • TDA 4410 'W Monolithisch Integrierte Schaltung Monolithic Integrated Circuit Anwendungen: Bild-ZF-Verstärker für Farb- und Schwarz-Weiß-Fernsehempfänger TDA 4400 bei PNP-Tunern TDA 4410 bei NPN-Tunern Applications: Video IF-amplifier for colour and monochrome television receivers.
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Untitled
Abstract: No abstract text available
Text: ALUMINUM ELECTROLYTIC CAPACITORS UN • • • • n x c K ic o n Chip Type, Bi-Polarized, Higher Capacitance Range pip For SMD Bi-polanzed Chip Type,higher capacitance in larger case sizes ^12.5, (616, ^18, ^20 Designed for surface mounting on high density PC board.
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Untitled
Abstract: No abstract text available
Text: Infineon b i i c l ü ç i i es P-HEMT CFH 400 Preliminary Data Sheet • Low noise figure and high associated gain for high IP3 receiver stages up to 4 GHz jp = 0.55 dB; Ga - 15.7 dB @ 3 V; 1 0 m A ;/= 1.8 GHz • Suitable for PCS CDMA and UMTS applications
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P-SOT343-4-1
Q62702-G0116
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Untitled
Abstract: No abstract text available
Text: P re lim ina ry Spec MITSUBISHI LSIs MH1 V645C W XPJ-6,-7 HYPER PAGE MODE 4194304-BIT 1048576-BIT BY 64-BIT DYNAMIC RAM DESCRIPTION The 1Mx64bit module is 1048576-word x 64-bit dynamic ram module. This consist of four industry standard 1M x 16 dynamic RAMs in SOJ and one industry standard
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V645C
4194304-BIT
1048576-BIT
64-BIT)
1Mx64bit
1048576-word
64-bit
MIT-DS-0030-1
24/Mar
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cqx 87
Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157
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AA113
AA117
AA119
BAV17
BAV18
BAV19
BAV20
BAV21
cqx 87
germanium
AEG Thyristor T 558 F
TDA 2516
bu208
bf506
la 4430
BF963
TDA1086
transistor bf 175
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LA4070
Abstract: 2WAY AS10 AS11 AS12 DIP30S LA2800N
Text: SANYO SEMICONDUCTOR. 15E CORP » I 7 T T 7 -0 7 ti ODOBOSâ T7S-07-I5' LA2800N: M o n o lith ic L in ea r IC 3061 Telephone A n sw e rin g M a ch in e 2572 • ' General Description The LA2800N is a telephone answering machine-use bipolar IC that performs the
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7TT7-07b
T7S-07-I5"
LA2800N
30-pin
LA4070
-10dBV
2WAY
AS10
AS11
AS12
DIP30S
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eg2801s
Abstract: EG2401S-ar 40H004 EG4401S-AR EG2401S EG2201S-AR epson e-1330 EG4801S-AR eg2401 eg-2401s
Text: 07-DEZ-1999 09:47 UON:EPSON EUROPE GMBH +49 S9 14005117 AN:41S SPECIFICATIONS FOR 1/64 MULTIPLEXING LÇET MO! EG2201.S-AR 1. EG2401S-A EG2601.S-AR 64 dots EG4401S-AR (256 xl28 dots) EG4801.S-AR (512 xl28 dots) JULY 2, 1986 SEIKO EPSON CORPORATION S. 00l7035
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07-DEZ-1999
EG4401S-AR
EG480LS-AR
-DEZ-1999
eg2801s
EG2401S-ar
40H004
EG4401S-AR
EG2401S
EG2201S-AR
epson e-1330
EG4801S-AR
eg2401
eg-2401s
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nas 1791
Abstract: pdt 908 aot 110 opto TC351 toshiba facsimile tc35 T08HIBAINTEGRATED AETA TC35190F
Text: ' — INTEGRATED CIRCUIT T08H IBA cmcs d ;c ;ta_ in teg r a te : TC 3 5 1 9 0 F T E C H N IC A L D A T A TC35190F SILICON V i d e o - d a t a C o e o r e s s l o n and E » p a n * l o n C o n t r o l l e r * of video-data ( VCEC 1988-11*03 . . . DESCRIPTION
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TC35190F
TC35190F
T08HIBA
TC3B190F
S9-29-20
nas 1791
pdt 908
aot 110 opto
TC351
toshiba facsimile tc35
T08HIBAINTEGRATED
AETA
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Untitled
Abstract: No abstract text available
Text: HB56AW1672E-A Series 16777216-word x 72-bit High Density Dynamic RAM Module HITACHI ADE-203-817A Z Rev. 1.0 Aug. 20, 1997 Description The HB56AW1672E-A belongs to 8-byte DIMM (Dual in-line Memory Module) family, and has been developed an optimized main memory solution for 4 and 8-byte processor applications. The
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HB56AW1672E-A
16777216-word
72-bit
ADE-203-817A
64-Mbit
HM5164400A)
16-bit
74LVT16244)
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HY51V17404A
Abstract: HY51V17404AJ60 00045n
Text: HY51V17404A Series • H Y U N D A I 4 M X 4-b it CMOS DRAM W ith Extended Data O ut DESCRIPTION The HY51V17404Aisthe new generation andfast dynamic RAM organized 4,194,304 x 4-bit. The HY51V17404A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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HY51V17404A
HY51V17404AÃ
0004S1Ã
1AD40-00-MAY95
HY51V17404AJ
HY51V17404ASLJ
HY51V17404AT
HY51V17404AJ60
00045n
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BR9041ARF
Abstract: BF190
Text: BR9041A / BR9041ARF 2 5 6 X 1 6 B i t '> U 7 l/E E P R O M B R 9 0 4 1 A 2 5 6 X 1 6 B it S e r ia l EEPROM B R 9 0 4 1 A R F • >£Hi/Dimensions Unit : mm) BR9041A/ARF(i, 4096t'-y h (2561 7 - K 'x i6 t" 'y h) 5 "T 7 °(7 5 y iU (EEPROM) T -fo S lfF ^ > I' □ - M i ,
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BR9041A
BR9041ARF
BR9041A/ARF
4096t
16-bit
10OnsWrt
BR9041A/ARFiC(
BR9041ARF
BF190
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PMB2307
Abstract: No abstract text available
Text: SIEMENS PMB 2307R PLL-Frequency Synthesizer Preliminary Data CMOS 1C Features • • • • Low operating current consumption typically 3.5 mA High input sensitivity, high input frequencies (220 MHz) Extremely fast phase detector without dead zone Linearization of the phase detector output by current
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2307R
65-MHz
PMB2307
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TC59WM803BFT
Abstract: THMD1GE2SB70
Text: TOSHIBA THMD1GE2SB70,75,80 TENTATIVE TO SHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 134,217,728-WORD BY 72-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THMD1GE2SB is a 134,217,728-word by 72-bit Double Data Rate synchronous dynamic RAM module consisting of 36 TC59WM803BFT DRAMs and PLL/Registers on a printed circuit board.
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THMD1GE2SB70
728-WORD
72-BIT
TC59WM803BFT
72-bit
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Untitled
Abstract: No abstract text available
Text: Tfi MICRON TE CHN OLOGY INC 6111549 MICRON TECHNOLOGY INC DE^blllSMI 68C 00060 OOQOGtaO T D T-41-55 IICRON TECHNOLOGY, INC. 655,360 Element Solid-State Image Sensor SYSTEMS GROUP 1447 Tyrell Lane Boise, Idaho 83706 208 386-3800 I TWX 910-970-5973 FEATURES
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T-41-55
IS6410
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