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Abstract: No abstract text available
Text: AOD488 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD488 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.
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AOD488
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AOD488
Abstract: No abstract text available
Text: AOD488 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD488 uses advanced trench technology and design to provide excellent R DS ON with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.
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AOD488
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AOD454
Abstract: AOD488
Text: AOD488 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD488 uses advanced trench technology and design to provide excellent R DS ON with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.
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AOD488
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AOD488
Abstract: No abstract text available
Text: AOD488 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD488 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.
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AOD480
Abstract: AOD488
Text: AOD480 N-Channel Enhancement Mode Field Effect Transistor General Description 1.4 Features VGS=10V, ID=18A The AOD480 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in PWM, load
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