Untitled
Abstract: No abstract text available
Text: Mar. 2005 AOD413, AOD413L Lead-Free P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance
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AOD413,
AOD413L
AOD413
AOD413L
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Untitled
Abstract: No abstract text available
Text: AOD413 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD413 uses advanced trench technology to provide excellent RDS ON , low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for
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Original
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PDF
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AOD413
AOD413
AOD413L
O-252
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Untitled
Abstract: No abstract text available
Text: AOD413 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD413 uses advanced trench technology to provide excellent RDS ON , low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for
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Original
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PDF
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AOD413
AOD413L
O-252
Drain-00
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AOD413L
Abstract: AOD413
Text: AOD413 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD413 uses advanced trench technology to provide excellent RDS ON , low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for
|
Original
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PDF
|
AOD413
AOD413
AOD413L
O-252
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