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    AO8807 Search Results

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    AO8807 Price and Stock

    Alpha & Omega Semiconductor AO8807

    MOSFET 2P-CH 12V 6.5A 8TSSOP
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    AO8807 Digi-Reel 1
    • 1 $0.81
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    Alpha & Omega Semiconductor AO8807L

    MOSFET P-CH 8TSSOP
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    Win Source Electronics AO8807L 20,130
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    AO8807 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AO8807 Alpha & Omega Semiconductor Load Switch - Dual P-Channel Enhancement Mode Field Effect Transistor Original PDF
    AO8807L Alpha & Omega Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 8TSSOP Original PDF

    AO8807 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AO8807L

    Abstract: No abstract text available
    Text: AO8807L Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8807L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch.


    Original     		PDF AO8807L AO8807L

    Untitled

    Abstract: No abstract text available
    Text: AO8807 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8807 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch. AO8807


    Original     		PDF AO8807 AO8807 AO8807L

    ao8807

    Abstract: 70°C AO8807L PF334
    Text: AO8807 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8807 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch. AO8807


    Original     		PDF AO8807 AO8807 AO8807L 70°C PF334

    AON6704L

    Abstract: AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025
    Text: Selector Guide Q4 2009 United states CALIFORNIA 495 Mercury Drive Sunnyvale, CA 94085 Phone: +1 408 830-9742 Fax: +1 (408) 830-9749 TEXAS 4845 Briar Creek Dr. Flower Mound, TX 75028 Phone: +1 (972) 691-1085 Fax: +1 (972) 691-1086 CHINA Rm F, 24/F Shenzhen Special Zone Press Tower


    Original     		PDF O-252) O-263) MSOP-10 SC70-3 SC70-6 SC-89-3 SC-89-6 OD523 OD923 OT23-3 AON6704L AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025

    Untitled

    Abstract: No abstract text available
    Text: Dual P-channel MOSFET ELM18807BA-S •General description ■Features ELM18807BA-S uses advanced trench technology to provide excellent Rds on and low gate charge. Internal ESD protection is included. • • • • • • ■Maximum absolute ratings Parameter


    Original     		PDF ELM18807BA-S ELM18807BA-S -60Biased